Abstract:
There is provided a TFT backplane having at least one TFT with oxide active layer and at least one TFT with poly-silicon active layer. In the embodiments of the present disclosure, at least one of the TFTs implementing the circuit of pixels in the active area is an oxide TFT (i.e., TFT with oxide semiconductor) while at least one of the TFTs implementing the driving circuit next to the active area is a LTPS TFT (i.e., TFT with poly-Si semiconductor).
Abstract:
An organic light emitting display is provided. The organic light emitting display comprises a multi-type thin-film transistor (TFT) and an organic light emitting diode. The multi-type TFT has a low-temperature-poly-silicon (LTPS) TFT and an oxide semiconductor TFT (oxide TFT) disposed on the LTPS TFT. The organic light emitting diode is electrically connected to the multi-type TFT. The LTPS TFT and the oxide TFT are connected to the same gate line.
Abstract:
There is provided a TFT backplane having at least one TFT with oxide active layer and at least one TFT with poly-silicon active layer. In the embodiments of the present disclosure, at least one of the TFTs implementing the circuit of pixels in the active area is an oxide TFT (i.e., TFT with oxide semiconductor) while at least one of the TFTs implementing the driving circuit next to the active area is a LTPS TFT (i.e., TFT with poly-Si semiconductor).
Abstract:
A see-through organic light emitting display device including a light emitting region having a transparent anode, an organic light emitting layer, and a transparent cathode, and a see-through region having a transparent auxiliary electrode, which is configured to transmit external light. The transparent auxiliary electrode can be made from the same material as the transparent anode and separated from the transparent anode, and the transparent cathode extends into the see-through region so as to be electrically connected with the transparent auxiliary electrode.
Abstract:
There is provided a TFT backplane having at least one TFT with oxide active layer and at least one TFT with poly-silicon active layer. In the embodiments of the present disclosure, at least one of the TFTs implementing the circuit of pixels in the active area is an oxide TFT (i.e., TFT with oxide semiconductor) while at least one of the TFTs implementing the driving circuit next to the active area is a LTPS TFT (i.e., TFT with poly-Si semiconductor).
Abstract:
There is provided a TFT backplane having at least one TFT with oxide active layer and at least one TFT with poly-silicon active layer. In the embodiments of the present disclosure, at least one of the TFTs implementing the circuit of pixels in the active area is an oxide TFT (i.e., TFT with oxide semiconductor) while at least one of the TFTs implementing the driving circuit next to the active area is a LTPS TFT (i.e., TFT with poly-Si semiconductor).