公开(公告)号：US10283531B2

公开(公告)日：2019-05-07

申请号：US15660803

申请日：2017-07-26

Applicant: LG Display Co., Ltd.

Inventor： JunHyeon Bae ,  JongUk Bae

IPC: H01L29/786 ,  H01L29/66 ,  H01L29/417 ,  H01L21/8238 ,  H01L21/18 ,  H01L21/425 ,  H01L29/10 ,  H01L27/12 ,  H01L21/44 ,  H01L21/34

Abstract: Disclosed is a thin film transistor including both an N-type semiconductor layer and a P-type semiconductor layer, a method for manufacturing the same, and a display device including the same, wherein the thin film transistor may include a first gate electrode on a substrate; a first gate insulating film covering the first gate electrode; a semiconductor layer on the first gate insulating film; a second gate insulating film covering the semiconductor layer; and a second gate electrode on the second gate insulating film, wherein the semiconductor layer includes the N-type semiconductor layer and the P-type semiconductor layer.

公开(公告)号：US10553727B2

公开(公告)日：2020-02-04

申请号：US15858679

申请日：2017-12-29

Applicant: LG Display Co., Ltd.

Inventor： JongUk Bae ,  YongHo Jang

IPC: H01L29/78 ,  H01L27/32 ,  H01L29/786 ,  H01L29/66

Abstract: Disclosed are a thin film transistor, a method of manufacturing the same, and an organic light emitting display device including the same, in which a driving stability of a driving transistor is enhanced even without connecting a source electrode to a bottom gate electrode of the driving transistor. The film transistor includes a N-type semiconductor layer, a P-type semiconductor layer on the N-type semiconductor layer, a first gate electrode on the P-type semiconductor layer, a gate insulation layer between the first gate electrode and the P-type semiconductor layer, a first source electrode connected to a first side of the P-type semiconductor layer, and a first drain electrode connected to a second side of the P-type semiconductor layer.

公开(公告)号：US10396099B2

公开(公告)日：2019-08-27

申请号：US15391636

申请日：2016-12-27

Applicant: LG Display Co., Ltd.

Inventor： JongUk Bae ,  YongHo Jang ,  JunHyeon Bae ,  Kwanghwan Ji ,  PilSang Yun ,  Jiyong Noh

IPC: H01L27/12 ,  G02F1/1368 ,  H01L27/32 ,  G02F1/1362 ,  H01L29/786 ,  G09G3/36 ,  G09G3/3266 ,  G09G3/3258 ,  G09G3/3275 ,  H01L29/417 ,  H01L29/66

Abstract: Disclosed are an oxide thin film transistor (TFT), a method of manufacturing the same, and a display panel and a display device using the same, in which a first conductor and a second conductor are provided at end portions of a semiconductor layer formed of oxide semiconductor. The first conductor and second conductor are electrically connected to a first electrode and a second electrode, and covered by a gate insulation layer. The oxide TFT includes a semiconductor layer provided on a buffer and including an oxide semiconductor, a gate insulation layer covering the semiconductor layer and the buffer, a gate electrode provided on the gate insulation layer to overlap a portion of the semiconductor layer, and a passivation layer covering the gate and the gate insulation layer.

公开(公告)号：US10256344B2

公开(公告)日：2019-04-09

申请号：US15906498

申请日：2018-02-27

Applicant: LG Display Co., Ltd.

Inventor： JongUk Bae

IPC: H01L29/786 ,  H01L29/66

Abstract: The present disclosure relates to an oxide thin film transistor and a fabricating method thereof. In the oxide thin film transistor, which uses amorphous zinc oxide (ZnO) semiconductor as an active layer, damage to the oxide semiconductor due to dry etching may be minimized by forming source and drain electrodes in a multilayered structure having at least two layers, and improving stability and reliability of a device by employing a dual passivation layer structure, which includes a lower layer for overcoming an oxygen deficiency and an upper layer to minimize effects of an external environment on the multilayered source and drain electrodes.

公开(公告)号：US09941410B2

公开(公告)日：2018-04-10

申请号：US14026769

申请日：2013-09-13

Applicant: LG Display Co., Ltd.

Inventor： JongUk Bae

IPC: H01L29/786 ,  H01L29/66

CPC classification number: H01L29/78636 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/78693

Abstract: The present disclosure relates to an oxide thin film transistor and a fabricating method thereof. In the oxide thin film transistor, which uses amorphous zinc oxide (ZnO) semiconductor as an active layer, damage to the oxide semiconductor due to dry etching may be minimized by forming source and drain electrodes in a multilayered structure having at least two layers, and improving stability and reliability of a device by employing a dual passivation layer structure, which includes a lower layer for overcoming an oxygen deficiency and an upper layer to minimize effects of an external environment on the multilayered source and drain electrodes.