公开(公告)号：US20240222512A1

公开(公告)日：2024-07-04

申请号：US18532865

申请日：2023-12-07

Applicant: LG Display Co., Ltd.

Inventor： YoungHyun Ko ,  ChanYong Jeong ,  JuHeyuck Baeck ,  GaWon Yang

IPC: H01L29/786 ,  H01L29/417

CPC classification number: H01L29/78621 ,  H01L29/41733 ,  H01L29/78633 ,  H01L29/45

Abstract: Provided are a thin film transistor and a display device. The thin film transistor has a structure in which an active layer has an induced conductorized portion located between a main conductorized portion and a channel area, with the induced conductorized portion overlapping a portion of one side of a light shield layer. The possibility of damage to the active layer is removed or minimized. A short channel is easily realized.

公开(公告)号：US20210399142A1

公开(公告)日：2021-12-23

申请号：US17340937

申请日：2021-06-07

Applicant: LG Display Co., Ltd.

Inventor： ChanYong Jeong ,  JuHeyuck Baeck ,  Dohyung Lee ,  Younghyun Ko

IPC: H01L29/786

Abstract: Embodiments of the present disclosure relate to a thin film transistor array substrate and display device in which a semiconductor layer has a heterogeneous conductorization structure including heterogeneous conductorization portions having different electrical conductivity, and the gate insulator layer is not etched enough to expose the semiconductor layer between the source electrode part and the gate electrode part and between the drain electrode part and the gate electrode part, so that the possibility of damage to the semiconductor layer can be eliminated or reduced.

公开(公告)号：US11195956B2

公开(公告)日：2021-12-07

申请号：US16502312

申请日：2019-07-03

Applicant: LG Display Co., Ltd.

Inventor： JuHeyuck Baeck ,  Dohyung Lee ,  ChanYong Jeong

IPC: H01L29/786 ,  H01L29/66 ,  H01L27/32 ,  H01L27/12

Abstract: A thin-film transistor, a display device including a thin-film transistor, and a method of manufacturing a thin-film transistor are provided. A thin-film transistor includes: a semiconductor layer including: a first oxide semiconductor layer including gallium (Ga), a second oxide semiconductor layer, and a silicon semiconductor layer between the first oxide semiconductor layer and the second oxide semiconductor layer, and a gate electrode spaced apart from the semiconductor layer and partially overlapping at least a part of the semiconductor layer.

公开(公告)号：US12142691B2

公开(公告)日：2024-11-12

申请号：US17563887

申请日：2021-12-28

Applicant: LG Display Co., Ltd.

Inventor： JuHeyuck Baeck ,  Dohyung Lee ,  ChanYong Jeong

IPC: H01L29/786 ,  H01L29/49 ,  H01L29/66

Abstract: A thin film transistor can include a first gate electrode, an active layer including a channel portion, and a second gate electrode. The active layer is between the first gate electrode and the second gate electrode, and at least a portion of the first gate electrode does not overlap with the second gate electrode. Further, at least a portion of the second gate electrode does not overlap with the first gate electrode, and the channel portion overlaps with at least one of the first gate electrode and the second gate electrode. In addition, a first portion of the channel portion can overlaps with one of the first gate electrode and the second gate electrode, and a second portion of the channel portion can overlap with a remaining one of the first gate electrode and the second gate electrode that is not overlapped by the first portion of the channel portion.

公开(公告)号：US12027631B2

公开(公告)日：2024-07-02

申请号：US18204224

申请日：2023-05-31

Applicant: LG DISPLAY CO., LTD.

Inventor： JuHeyuck Baeck ,  Dohyung Lee ,  ChanYong Jeong

IPC: H01L29/786 ,  H01L27/12 ,  H10K59/121 ,  H10K59/126

CPC classification number: H01L29/7869 ,  H01L27/1225 ,  H01L29/78603 ,  H01L29/78633 ,  H01L29/78696 ,  H10K59/1213 ,  H10K59/126

Abstract: A thin film transistor is disclosed. The thin film transistor comprises an active layer, and a gate electrode overlapped with the active layer, wherein the active layer includes a channel portion overlapped with the gate electrode, and the channel portion includes a source boundary portion, a drain boundary portion, and a main channel portion, wherein at least a part of the drain boundary portion have a relatively smaller thickness in comparison to a thickness of the main channel portion. Also, according to one embodiment of the present disclosure, a display apparatus comprising the thin film transistor is provided.

公开(公告)号：US11705463B2

公开(公告)日：2023-07-18

申请号：US17113845

申请日：2020-12-07

Applicant: LG Display Co., Ltd.

Inventor： ChanYong Jeong ,  Dohyung Lee ,  JuHeyuck Baeck

IPC: H01L27/14 ,  H01L27/12 ,  H10K59/131

CPC classification number: H01L27/124 ,  H01L27/1262 ,  H10K59/131

Abstract: Provided are a transistor array substrate and an electronic device. A first active layer includes a first area, a second area spaced apart from the first area, and a channel area provided between the first area and the second area. A gate insulating film is disposed on the first active layer. A gate electrode is disposed on the gate insulating film to overlap a portion of the channel area of the first active layer. The gate electrode overlaps a portion of at least one area of the first and second areas of the first active layer. Deteriorations in the channel area are prevented.

公开(公告)号：US20230187452A1

公开(公告)日：2023-06-15

申请号：US17977669

申请日：2022-10-31

Applicant: LG Display Co., Ltd.

Inventor： JuHeyuck Baeck

IPC: H01L27/12 ,  H01L27/32 ,  G02F1/1368

CPC classification number: H01L27/1225 ,  H01L27/3262 ,  G02F1/1368

Abstract: A display device includes a substrate and multiple thin film transistors, each of which comprises an active layer having a channel portion, and a gate electrode that overlaps the channel portion of the active layer. The gate electrode includes a first part that at least partially overlaps the channel portion, and a second part having a thickness smaller than that of the first part, at least partially overlapping the channel portion, and light transmittance of the second part is greater than that of the first part.

公开(公告)号：US11600677B2

公开(公告)日：2023-03-07

申请号：US17122811

申请日：2020-12-15

Applicant: LG Display Co., Ltd.

Inventor： Dohyung Lee ,  ChanYong Jeong ,  JuHeyuck Baeck

IPC: H01L27/00 ,  H01L29/00 ,  H01L27/32 ,  H01L29/786 ,  H01L29/24 ,  H01L27/12

Abstract: A thin film transistor (TFT) array substrate for an electronic device includes a first active layer of a first TFT which is an oxide semiconductor layer including molybdenum, a second active layer of a second TFT which is an oxide semiconductor layer and disposed on a buffer layer to be spaced apart from the first active layer of the first TFT, a first gate insulating film overlapping the first active layer and the second active layer, a first gate electrode of the first TFT overlapping the first gate insulating film and a part of the first active layer, and a second gate electrode of the second TFT overlapping the first gate insulating film, spaced apart from the first gate electrode, and overlapping a part of the second active layer. Accordingly, the first TFT has a high subthreshold parameter, and the second TFT has high mobility.

公开(公告)号：US11482623B2

公开(公告)日：2022-10-25

申请号：US17115603

申请日：2020-12-08

Applicant: LG Display Co., Ltd.

Inventor： JuHeyuck Baeck ,  Dohyung Lee ,  ChanYong Jeong

IPC: H01L29/786 ,  H01L27/32

Abstract: Provided are a thin film transistor array substrate and an electronic device including the same. More specifically, the thin film transistor array includes a first active layer including a first area, a second area spaced apart from the first area, and a channel area provided between the first area and the second area, a first gate electrode disposed on the first active layer, and a second gate electrode disposed on the same layer as the first gate electrode to overlap one end of the first gate electrode and to which a signal corresponding to a signal applied to the first gate electrode is applied. Therefore, it is possible to have a structure for simultaneously controlling the threshold voltage, mobility, and subthreshold (S) parameter of a thin film transistor.

公开(公告)号：US11094793B2

公开(公告)日：2021-08-17

申请号：US16538587

申请日：2019-08-12

Applicant: LG Display Co., Ltd.

Inventor： SeHee Park ,  InTak Cho ,  DaeHwan Kim ,  JuHeyuck Baeck ,  Jiyong Noh

IPC: H01L29/49 ,  H01L29/786 ,  H01L27/12 ,  G09G3/3266 ,  G11C19/28 ,  G09G3/3225 ,  G09G3/3233

Abstract: A thin film transistor substrate can include a first buffer layer disposed on a base substrate; a second buffer layer disposed on the first buffer layer; a semiconductor layer disposed on the second buffer layer; and a gate electrode spaced apart from the semiconductor layer, at least a part of the gate electrode overlapping with the semiconductor layer, in which a surface oxygen concentration of the first buffer layer is higher than a surface oxygen concentration of the second buffer layer.