公开(公告)号：US12258663B2

公开(公告)日：2025-03-25

申请号：US18180585

申请日：2023-03-08

Applicant: LG Display Co., Ltd.

Inventor： Jaeyoon Park ,  JaeHyeon Park ,  KiHoon Park ,  PilSang Yun

IPC: C23C16/455 ,  C23C16/40 ,  C23C16/44 ,  C23C16/448 ,  H01L27/12

Abstract: Disclosed are an apparatus and method of manufacturing an oxide film having a uniform composition and thickness. The apparatus includes a lower chamber including a reaction space, a susceptor to support a substrate, a chamber lid including gas injection ports, a gas distribution module between the chamber lid and the susceptor and connected to the gas injection ports, a first source container module comprising a first source gas having a first vapor pressure, a first carrier gas supply module supplying a first carrier gas to the first source container module, a second source container module comprising a second source gas having a second vapor pressure, a force gas supply module supplying a force gas, and a reactant gas supply module supplying a reactant gas.

公开(公告)号：US20230220547A1

公开(公告)日：2023-07-13

申请号：US18180585

申请日：2023-03-08

Applicant: LG Display Co., Ltd.

Inventor： Jaeyoon Park ,  JaeHyeon Park ,  KiHoon Park ,  PilSang Yun

IPC: C23C16/455 ,  H01L27/12 ,  C23C16/44 ,  C23C16/40 ,  C23C16/448

CPC classification number: C23C16/45523 ,  H01L27/1262 ,  C23C16/4412 ,  C23C16/40 ,  C23C16/407 ,  C23C16/45561 ,  C23C16/4485 ,  C23C16/4481

Abstract: Disclosed are an apparatus and method of manufacturing an oxide film having a uniform composition and thickness. The apparatus includes a lower chamber including a reaction space, a susceptor to support a substrate, a chamber lid including gas injection ports, a gas distribution module between the chamber lid and the susceptor and connected to the gas injection ports, a first source container module comprising a first source gas having a first vapor pressure, a first carrier gas supply module supplying a first carrier gas to the first source container module, a second source container module comprising a second source gas having a second vapor pressure, a force gas supply module supplying a force gas, and a reactant gas supply module supplying a reactant gas.