公开(公告)号：US11574843B2

公开(公告)日：2023-02-07

申请号：US17124344

申请日：2020-12-16

Applicant: LG Display Co., Ltd.

Inventor： KyungChul Ok ,  JungSeok Seo ,  PilSang Yun ,  Jiyong Noh ,  Jaeman Jang ,  InTak Cho

IPC: H01L21/8234 ,  H01L27/32 ,  H01L29/66 ,  H01L29/786 ,  H01L21/02 ,  H01L27/12

Abstract: Disclosed is a thin film transistor, a method for manufacturing the same and a display apparatus comprising the same, wherein the thin film transistor includes a first insulating layer on a substrate, an active layer on the first insulating layer, and a gate electrode spaced apart from the active layer and configured to have at least a portion overlapped with the active layer, wherein the active layer has a single crystal structure of an oxide semiconductor material, and an upper surface of the first insulating layer which contacts the active layer is an oxygen (O) layer made of oxygen (O).

公开(公告)号：US20240204076A1

公开(公告)日：2024-06-20

申请号：US18461336

申请日：2023-09-05

Applicant: LG Display Co., Ltd.

Inventor： KyungChul Ok ,  Uyhyun Choi ,  SeungChan Choi ,  Min-Gu Kang ,  Jaeman Jang ,  DaeHwan Kim ,  Seoyeon Im

IPC: H01L29/49 ,  H01L29/40 ,  H01L29/423 ,  H01L29/66 ,  H01L29/786

CPC classification number: H01L29/4908 ,  H01L29/401 ,  H01L29/42384 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/7869 ,  H01L21/02126

Abstract: The thin film transistor, fabrication method thereof, and display apparatus comprising the same are provided. The thin film transistor comprises a base substrate, an oxide semiconductor layer on the base substrate, a channel protection layer in contact with the oxide semiconductor layer, and a gate electrode spaced apart from the oxide semiconductor layer and at least partially overlapped with the oxide semiconductor layer, and the channel protection layer includes carbon.