公开(公告)号：US11069721B2

公开(公告)日：2021-07-20

申请号：US16560208

申请日：2019-09-04

Applicant: LG Display Co., Ltd.

Inventor： Won-June Jung ,  Sang-Moo Park ,  Seok-Hyun Lee

IPC: H01L27/12 ,  H01L23/528 ,  G02F1/1362 ,  H01L27/32 ,  G02F1/1345 ,  H01L23/60 ,  H01L23/532 ,  H01L25/18 ,  H01L29/786

Abstract: Disclosed are a display device for preventing loss of line patterns and a method of manufacturing the display device. The display device includes a substrate having an active area, a non-active area, and a pad portion formed at one side of the non-active area, printed circuit films disposed in the pad portion so as to be spaced a first distance apart from an edge of the substrate in a first direction and to be spaced apart from each other in a second direction that intersects the first direction, a first-layer line and a second-layer line disposed within the first distance between the printed circuit films and the edge of the substrate so as to be spaced apart from each other in the first direction, and island-shaped dummy patterns disposed in the same layer as the second-layer line in a region between two adjacent ones of the printed circuit films.

公开(公告)号：US10468477B2

公开(公告)日：2019-11-05

申请号：US15699655

申请日：2017-09-08

Applicant: LG DISPLAY CO., LTD.

Inventor： Won-June Jung ,  Woo-Sup Shin ,  Sang-Moo Park

IPC: H01L27/32 ,  G09G3/3233

Abstract: An organic light-emitting display device is discussed, which reduces the area of a pixel drive circuit and increases the aperture ratio of a pixel by forming lines inside the pixel using a semiconductor pattern that forms a channel of each thin-film transistor array. The light-emitting display device includes a plurality of pixels arranged in a matrix form and a plurality of lines configured to supply a signal for driving each pixel, each pixel includes a thin-film transistor including an active layer having a first area and a second area, which are configured as conductors, and a gate electrode, and at least one of the first area and the second area is directly connected to a corresponding line among the lines.

公开(公告)号：US11839110B2

公开(公告)日：2023-12-05

申请号：US16567373

申请日：2019-09-11

Applicant: LG Display Co., Ltd.

Inventor： Seok-Hyun Lee ,  Woo-Sup Shin ,  Sang-Moo Park ,  Chang-Wook Song ,  Hae-Lim Jung

IPC: H10K59/121 ,  H10K50/844 ,  H10K59/124 ,  H10K59/126 ,  H10K59/131

CPC classification number: H10K59/1213 ,  H10K50/844 ,  H10K59/124 ,  H10K59/126 ,  H10K59/131

Abstract: An organic light-emitting display device comprises a substrate, a driving thin-film transistor including an active layer on the substrate, source and drain electrodes directly contacting the active layer, and a gate electrode on the active layer, and an organic light-emitting element connected to the driving thin-film transistor. Each of the source and drain electrodes of the driving thin-film transistor exposes a respective side surface of the active layer.

公开(公告)号：US09117846B2

公开(公告)日：2015-08-25

申请号：US14055553

申请日：2013-10-16

Applicant: LG Display Co., Ltd.

Inventor： Sang-Moo Park ,  Bong-Chul Kim ,  Chan-Ki Ha ,  Jin-Woo Kwon ,  Heung-Jo Lee

IPC: H01L29/66 ,  H01L29/786

CPC classification number: H01L29/66742 ,  H01L29/66969 ,  H01L29/7869

Abstract: A method of manufacturing an oxide thin film transistor includes forming a gate electrode on a substrate; forming a gate insulating film the gate electrode; forming an oxide semiconductor layer on the gate insulating film; sequentially forming a lower data metal layer and an upper data metal layer on including the oxide semiconductor layer; forming an upper source pattern and an upper drain pattern by patterning the upper data metal layer by a wet etching; forming a lower source pattern and a lower drain pattern by patterning the lower data metal layer by a dry etching using the upper source pattern and the upper drain pattern as a mask to form a source electrode and a drain electrode; forming a first passivation film on the source and drain electrodes; performing a heat treatment on the oxide semiconductor layer; and forming a second passivation film on the first passivation film.

Abstract translation: 一种氧化物薄膜晶体管的制造方法，包括：在基板上形成栅电极; 形成栅极绝缘膜; 在栅极绝缘膜上形成氧化物半导体层; 在包括所述氧化物半导体层上顺序地形成下数据金属层和上数据金属层; 通过湿蚀刻图案化上数据金属层，形成上源图案和上漏图案; 通过使用上部源图案和上部排列图案作为掩模的干蚀刻图案化下部数据金属层来形成较低的源图案和较低的漏极图案，以形成源极和漏极; 在源极和漏极上形成第一钝化膜; 对氧化物半导体层进行热处理; 以及在所述第一钝化膜上形成第二钝化膜。

公开(公告)号：US20140147967A1

公开(公告)日：2014-05-29

申请号：US14055553

申请日：2013-10-16

Applicant: LG DISPLAY CO., LTD.

Inventor： Sang-Moo Park ,  Bong-Chul Kim ,  Chan-Ki Ha ,  Jin-Woo Kwon ,  Heung-Jo Lee

IPC: H01L29/66

CPC classification number: H01L29/66742 ,  H01L29/66969 ,  H01L29/7869

Abstract: A method of manufacturing an oxide thin film transistor includes forming a gate electrode on a substrate; forming a gate insulating film the gate electrode; forming an oxide semiconductor layer on the gate insulating film; sequentially forming a lower data metal layer and an upper data metal layer on including the oxide semiconductor layer; forming an upper source pattern and an upper drain pattern by patterning the upper data metal layer by a wet etching; forming a lower source pattern and a lower drain pattern by patterning the lower data metal layer by a dry etching using the upper source pattern and the upper drain pattern as a mask to form a source electrode and a drain electrode; forming a first passivation film on the source and drain electrodes; performing a heat treatment on the oxide semiconductor layer; and forming a second passivation film on the first passivation film.

Abstract translation: 一种氧化物薄膜晶体管的制造方法，包括：在基板上形成栅电极; 形成栅极绝缘膜; 在栅极绝缘膜上形成氧化物半导体层; 在包括所述氧化物半导体层上顺序地形成下数据金属层和上数据金属层; 通过湿蚀刻图案化上数据金属层，形成上源图案和上漏图案; 通过使用上部源图案和上部排列图案作为掩模的干蚀刻图案化下部数据金属层来形成较低的源图案和较低的漏极图案，以形成源极和漏极; 在源极和漏极上形成第一钝化膜; 对氧化物半导体层进行热处理; 以及在所述第一钝化膜上形成第二钝化膜。