公开(公告)号：US20170186781A1

公开(公告)日：2017-06-29

申请号：US15245944

申请日：2016-08-24

Applicant: LG DISPLAY CO., LTD.

Inventor： Soyoung NOH ,  Jinchae JEON ,  Seungchan CHOI ,  Junho LEE ,  Youngjang LEE ,  Sungbin RYU ,  Kitae KIM ,  Bokyoung CHO ,  Jeanhan YOON ,  Uijin CHUNG ,  Jihye LEE ,  Eunsung KIM ,  Hyunsoo SHIN ,  Kyeongju MOON ,  Hyojin KIM ,  Wonkyung KIM ,  Jeihyun LEE ,  Soyeon JE

IPC: H01L27/12 ,  H01L49/02 ,  H01L29/417

CPC classification number: H01L27/1248 ,  H01L27/1225 ,  H01L27/1251 ,  H01L27/1255 ,  H01L27/1288 ,  H01L27/3258 ,  H01L27/3262 ,  H01L28/60 ,  H01L29/41733 ,  H01L29/78675 ,  H01L29/7869

Abstract: A thin film transistor substrate having two different types of thin film transistors on the same substrate, and a display using the same are discussed. The thin film transistor substrate can include a substrate, a first thin film transistor (TFT), a second TFT, a first storage capacitor electrode, an oxide layer, a nitride layer, a second storage capacitor electrode, a planar layer and a pixel electrode. The first TFT is disposed in a first area, the second TFT is disposed in a second area, and the first storage capacitor electrode is disposed in a third area on the substrate respectively. The oxide layer covers the first and second TFTs, and exposes the first storage capacitor electrode. The nitride layer is disposed on the oxide layer and covers the first storage capacitor electrode. The second storage capacitor electrode overlaps with the first storage capacitor electrode on the nitride layer. The planar layer covers the first and second TFTs,and the second storage capacitor electrode. The pixel electrode is disposed on the planar layer.

公开(公告)号：US20200168638A1

公开(公告)日：2020-05-28

申请号：US16529424

申请日：2019-08-01

Applicant: LG Display Co., Ltd.

Inventor： Soyeon JE ,  KiTae KIM

IPC: H01L27/12

Abstract: A display device includes a substrate; a buffer layer disposed on the substrate; a first thin-film transistor comprising a first active layer made of a low-temperature poly-silicon (LTPS), a first gate electrode overlapping with the first active layer with the first gate insulating layer and the second gate insulating layer therebetween, and a first source electrode and a first drain electrode electrically connected to the first active layer; and a second thin-film transistor comprising a second active layer made of an oxide semiconductor, a second gate electrode overlapping with the second active layer with the second gate insulating layer therebetween, and a second source electrode and a second drain electrode electrically connected to the second active layer. The first gate electrode of the first thin-film transistor and the second gate electrode of the second thin-film transistor may be disposed on the second gate insulating layer.