公开(公告)号：US20170186781A1

公开(公告)日：2017-06-29

申请号：US15245944

申请日：2016-08-24

Applicant: LG DISPLAY CO., LTD.

Inventor： Soyoung NOH ,  Jinchae JEON ,  Seungchan CHOI ,  Junho LEE ,  Youngjang LEE ,  Sungbin RYU ,  Kitae KIM ,  Bokyoung CHO ,  Jeanhan YOON ,  Uijin CHUNG ,  Jihye LEE ,  Eunsung KIM ,  Hyunsoo SHIN ,  Kyeongju MOON ,  Hyojin KIM ,  Wonkyung KIM ,  Jeihyun LEE ,  Soyeon JE

IPC: H01L27/12 ,  H01L49/02 ,  H01L29/417

CPC classification number: H01L27/1248 ,  H01L27/1225 ,  H01L27/1251 ,  H01L27/1255 ,  H01L27/1288 ,  H01L27/3258 ,  H01L27/3262 ,  H01L28/60 ,  H01L29/41733 ,  H01L29/78675 ,  H01L29/7869

Abstract: A thin film transistor substrate having two different types of thin film transistors on the same substrate, and a display using the same are discussed. The thin film transistor substrate can include a substrate, a first thin film transistor (TFT), a second TFT, a first storage capacitor electrode, an oxide layer, a nitride layer, a second storage capacitor electrode, a planar layer and a pixel electrode. The first TFT is disposed in a first area, the second TFT is disposed in a second area, and the first storage capacitor electrode is disposed in a third area on the substrate respectively. The oxide layer covers the first and second TFTs, and exposes the first storage capacitor electrode. The nitride layer is disposed on the oxide layer and covers the first storage capacitor electrode. The second storage capacitor electrode overlaps with the first storage capacitor electrode on the nitride layer. The planar layer covers the first and second TFTs,and the second storage capacitor electrode. The pixel electrode is disposed on the planar layer.

公开(公告)号：US20140084286A1

公开(公告)日：2014-03-27

申请号：US13943893

申请日：2013-07-17

Applicant: LG Display Co., Ltd.

Inventor： Jinchae JEON ,  Kisul CHO

IPC: H01L33/00

CPC classification number: H01L33/0041 ,  H01L27/1225 ,  H01L27/124 ,  H01L29/78633 ,  H01L29/78648

Abstract: A thin film transistor array substrate and a method for manufacturing the same are disclosed. The thin film transistor array substrate includes a plurality of pixel units defined by a cross structure of gate lines with data lines and power lines on a substrate. Each of the pixel units includes a driving unit, which includes a switching thin film transistor and a driving thin film transistor receiving a signal from the gate line, the data line, and the power line, and a capacitor storing a signal; and a light emitting unit emitting light on a pixel electrode receiving a driving current from the driving thin film transistor. Each of a plurality of shielding patterns is positioned under the switching thin film transistor and the driving thin film transistor of the pixel unit.

Abstract translation: 公开了薄膜晶体管阵列基板及其制造方法。 薄膜晶体管阵列基板包括由基板上的数据线和电源线的栅极线的交叉结构限定的多个像素单元。 每个像素单元包括驱动单元，其包括开关薄膜晶体管和从栅极线，数据线和电力线接收信号的驱动薄膜晶体管和存储信号的电容器; 以及在从驱动薄膜晶体管接收驱动电流的像素电极上发光的发光单元。 多个屏蔽图案中的每一个位于开关薄膜晶体管和像素单元的驱动薄膜晶体管的下方。

公开(公告)号：US20180315885A1

公开(公告)日：2018-11-01

申请号：US16012346

申请日：2018-06-19

Applicant: LG DISPLAY CO., LTD.

Inventor： Jinchae JEON ,  Kisul CHO

IPC: H01L33/00 ,  H01L27/12 ,  H01L29/786

CPC classification number: H01L33/0041 ,  H01L27/1225 ,  H01L27/124 ,  H01L29/78633 ,  H01L29/78648

Abstract: A thin film transistor array substrate and a method for manufacturing the same are disclosed. The thin film transistor array substrate includes a plurality of pixel units defined by a cross structure of gate lines with data lines and power lines on a substrate. Each of the pixel units includes a driving unit, which includes a switching thin film transistor and a driving thin film transistor receiving a signal from the gate line, the data line, and the power line, and a capacitor storing a signal; and a light emitting unit emitting light on a pixel electrode receiving a driving current from the driving thin film transistor. Each of a plurality of shielding patterns is positioned under the switching thin film transistor and the driving thin film transistor of the pixel unit.