公开(公告)号：US20220148510A1

公开(公告)日：2022-05-12

申请号：US17522713

申请日：2021-11-09

Applicant: LG Display Co., Ltd.

Inventor： Sungbin RYU

IPC: G09G3/3258

Abstract: A display device compensates a threshold voltage Vth of a driving transistor according to a source follower internal compensation method. The threshold voltage Vth of the driving transistor is sampled in advance before one horizontal period H, so that a sufficient time for sampling the threshold voltage Vth of the driving transistor can be obtained even in a high-speed or high-resolution display device. Furthermore, the compensation rate of the internal compensation circuit is improved to reduce luminance deviation between the pixels.

公开(公告)号：US20230206850A1

公开(公告)日：2023-06-29

申请号：US18170478

申请日：2023-02-16

Applicant: LG Display Co., LTD.

Inventor： Sungbin RYU

IPC: G09G3/3258

CPC classification number: G09G3/3258 ,  G09G3/3266 ,  G09G2310/0294

Abstract: A display device compensates a threshold voltage Vth of a driving transistor according to a source follower internal compensation method. The threshold voltage Vth of the driving transistor is sampled in advance before one horizontal period H, so that a sufficient time for sampling the threshold voltage Vth of the driving transistor can be obtained even in a high-speed or high-resolution display device. Furthermore, the compensation rate of the internal compensation circuit is improved to reduce luminance deviation between the pixels.

公开(公告)号：US20170186781A1

公开(公告)日：2017-06-29

申请号：US15245944

申请日：2016-08-24

Applicant: LG DISPLAY CO., LTD.

Inventor： Soyoung NOH ,  Jinchae JEON ,  Seungchan CHOI ,  Junho LEE ,  Youngjang LEE ,  Sungbin RYU ,  Kitae KIM ,  Bokyoung CHO ,  Jeanhan YOON ,  Uijin CHUNG ,  Jihye LEE ,  Eunsung KIM ,  Hyunsoo SHIN ,  Kyeongju MOON ,  Hyojin KIM ,  Wonkyung KIM ,  Jeihyun LEE ,  Soyeon JE

IPC: H01L27/12 ,  H01L49/02 ,  H01L29/417

CPC classification number: H01L27/1248 ,  H01L27/1225 ,  H01L27/1251 ,  H01L27/1255 ,  H01L27/1288 ,  H01L27/3258 ,  H01L27/3262 ,  H01L28/60 ,  H01L29/41733 ,  H01L29/78675 ,  H01L29/7869

Abstract: A thin film transistor substrate having two different types of thin film transistors on the same substrate, and a display using the same are discussed. The thin film transistor substrate can include a substrate, a first thin film transistor (TFT), a second TFT, a first storage capacitor electrode, an oxide layer, a nitride layer, a second storage capacitor electrode, a planar layer and a pixel electrode. The first TFT is disposed in a first area, the second TFT is disposed in a second area, and the first storage capacitor electrode is disposed in a third area on the substrate respectively. The oxide layer covers the first and second TFTs, and exposes the first storage capacitor electrode. The nitride layer is disposed on the oxide layer and covers the first storage capacitor electrode. The second storage capacitor electrode overlaps with the first storage capacitor electrode on the nitride layer. The planar layer covers the first and second TFTs,and the second storage capacitor electrode. The pixel electrode is disposed on the planar layer.