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    Method of fabricating lightweight and thin liquid crystal display
    2.
    发明授权
    Method of fabricating lightweight and thin liquid crystal display 有权
    制造轻薄型液晶显示器的方法

    公开(公告)号：US09033757B2

    公开(公告)日：2015-05-19

    申请号：US13685558

    申请日：2012-11-26

    Applicant: LG Display Co., Ltd.

    Inventor： KiYong Kim ,  JaeKyun Lee ,  JaeYoung Oh ,  YongSu An ,  SungKi Kim ,  JaeWon Lee ,  Dongkyu Lee

    IPC: H01J9/00 ,  H01J9/24 ,  G02F1/1335 ,  G02F1/13 ,  G02F1/1333

    CPC classification number: G02F1/133514 ,  G02F1/1303 ,  G02F1/133351

    Abstract: In a method for fabricating a lightweight and thin liquid crystal display (LCD), a first mother substrate, a subsidiary substrate and a thin second mother substrate are provided. An edge cut is formed by cutting edges of the first and second mother substrates and the subsidiary substrate to be inclined at a predetermined angle. An array process is performed on the first mother substrate. The subsidiary substrate is attached to the second mother substrate. A color filter process is performed on the second mother substrate having the subsidiary substrate attached thereto. The first and second mother substrates are attached together. The subsidiary substrate is separated from the first and second substrates by spraying air between the second mother substrate and the subsidiary substrate, in which the edge cut is formed.

    Abstract translation: 在制造轻量级薄型液晶显示器（LCD）的方法中，提供第一母基板，辅助基板和薄的第二母基片。 通过切割第一母基板和第二母基板的辅助基板的边缘以预定的角度倾斜来形成边缘切割。 在第一母基板上进行阵列处理。 辅助基板附接到第二母基板。 在附着有辅助基板的第二母基板上进行滤色器处理。 第一和第二母基片连接在一起。 通过在形成边缘切割的第二母体基板和辅助基板之间喷射空气，将辅助基板与第一和第二基板分离。

    Thin-film transistor having hydrogen-blocking layer and display apparatus including the same
    5.
    发明授权
    Thin-film transistor having hydrogen-blocking layer and display apparatus including the same 有权

    公开(公告)号：US11011650B2

    公开(公告)日：2021-05-18

    申请号：US16058737

    申请日：2018-08-08

    Applicant: LG Display Co., Ltd.

    Inventor： Seoyeon Im ,  HeeSung Lee ,  SeungJin Kim ,  SungKi Kim

    IPC: H01L29/786 ,  H01L29/24 ,  H01L21/385 ,  H01L27/12 ,  H01L29/66 ,  H01L21/02 ,  H01L29/04 ,  H01L51/00 ,  H01L27/32 ,  G02F1/1368 ,  G02F1/1362

    Abstract: A thin-film transistor is disclosed. The thin-film transistor includes an oxide semiconductor layer disposed on a substrate, a gate electrode disposed so as to overlap at least a portion of the oxide semiconductor layer and isolated from the oxide semiconductor layer, a source electrode connected to the oxide semiconductor layer, and a drain electrode connected to the oxide semiconductor layer and spaced apart from the source electrode, wherein the oxide semiconductor layer includes a first sub layer disposed on the substrate, a second sub layer disposed on the first sub layer, and a third sub layer disposed on the second sub layer, the second sub layer has larger resistance than the first sub layer and the third sub layer and lower carrier concentration than the first sub layer and the third sub layer, the first sub layer has higher hydrogen concentration than the second sub layer and the third sub layer, and each of the first sub layer and the second sub layer has crystallinity.

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