公开(公告)号：US10949038B2

公开(公告)日：2021-03-16

申请号：US16698781

申请日：2019-11-27

Applicant: LG Display Co., Ltd.

Inventor： Hyangmyoung Gwon ,  SeungHee Nam ,  Kwon-Shik Park ,  DeukSu Lee ,  BuYeol Lee ,  Yangsik Lee

IPC: G06F3/044 ,  G06F3/041 ,  H01L27/32 ,  H01L51/52

Abstract: An organic light-emitting display panel having a built-in touchscreen includes a plurality of subpixels defined therein by a plurality of data lines and a plurality of gate lines, an encapsulation layer having an encapsulating function, and a color filter layer located on the encapsulation layer. An organic light-emitting display device includes the organic light-emitting display panel. Both the organic light-emitting display panel having a built-in touchscreen and the organic light-emitting display device having a built-in touchscreen is provided with a structure enabling a touchscreen disposed therewithin.

公开(公告)号：US10388739B2

公开(公告)日：2019-08-20

申请号：US16058156

申请日：2018-08-08

Applicant: LG Display Co., Ltd.

Inventor： HeeSung Lee ,  Seoyeon Im ,  Kwon-Shik Park ,  SungKi Kim

IPC: H01L29/10 ,  H01L29/267 ,  H01L29/786 ,  H01L29/24 ,  H01L29/778 ,  H01L27/12 ,  G02F1/1333 ,  H01L27/32 ,  H01L51/00 ,  G02F1/1368

Abstract: The present disclosure relates to a thin-film transistor including two-dimensional semiconductor and display apparatus including the same. The thin-film transistor includes a gate electrode disposed on a substrate, a semiconductor layer disposed so as to overlap at least a portion of the gate electrode in the state of being isolated from the gate electrode, a gate insulation film disposed between the gate electrode and the semiconductor layer, a source electrode connected to the semiconductor layer, and a drain electrode connected to the semiconductor layer in the state of being spaced apart from the source electrode, wherein the semiconductor layer includes a first layer including an oxide semiconductor and a second layer disposed so as to overlap the first layer in a plane view, the second layer comprising a two-dimensional semiconductor, and an energy band gap of the first layer is larger than an energy band gap of the second layer.

公开(公告)号：US11656701B2

公开(公告)日：2023-05-23

申请号：US17102017

申请日：2020-11-23

Applicant: LG Display Co., Ltd.

Inventor： Jae-Won Lee ,  Seung-Hee Nam ,  Min-Joo Kim ,  Kwon-Shik Park ,  Jae-Young Oh ,  Deuk-Su Lee ,  Bu-Yeol Lee ,  Eun-Hye Lee ,  Tae-hwan Kim

IPC: G06F3/041 ,  G06F3/044 ,  G06F3/047 ,  G02F1/1333 ,  H01L27/32 ,  H01L51/52 ,  H01L51/56 ,  H10K59/35 ,  H10K59/38 ,  H10K59/40 ,  H10K59/12 ,  H10K50/844 ,  H10K50/86 ,  H10K71/00

CPC classification number: G06F3/0412 ,  G06F3/044 ,  G06F3/047 ,  G06F3/0416 ,  G06F3/0446 ,  G06F3/04164 ,  H01L27/322 ,  H01L27/323 ,  H01L27/3213 ,  H01L27/3244 ,  H01L51/5253 ,  H01L51/5284 ,  H01L51/56 ,  G02F1/13338 ,  G06F2203/04103 ,  G06F2203/04111 ,  G06F2203/04112 ,  H01L2227/323

Abstract: Disclosed is an organic light emitting display having reduced thickness and weight. The organic light emitting display with a touch sensor removes the necessity of an additional adhesion process by directly forming a touch sensor including a touch sensing line and a touch driving line and a color filter on the encapsulation layer covering a light emitting device, thereby simplifying a manufacturing process and reducing manufacturing costs.

公开(公告)号：US09343483B2

公开(公告)日：2016-05-17

申请号：US14582274

申请日：2014-12-24

Applicant: LG Display Co., Ltd.

Inventor： Min-Cheol Kim ,  Youn-Gyoung Chang ,  Kwon-Shik Park ,  So-Hyung Lee ,  Ho-Young Jung ,  Ha-Jin Yoo ,  Jeong-Suk Yang

IPC: H01L27/12

CPC classification number: H01L27/124 ,  H01L27/1225 ,  H01L27/1248 ,  H01L27/1288

Abstract: A method for manufacturing a thin film transistor (TFT) array substrate having enhanced reliability is disclosed. The method includes forming a multilayer structure including at least one first metal layer and a second metal layer made of copper, forming a first mask layer including a first mask area corresponding to a data line and a second mask area corresponding to an electrode pattern to overlap with an active layer, patterning the multilayer structure, thereby forming the data line constituted by the multilayer structure, patterning the second metal layer, thereby forming the electrode pattern constituted by the at least one first metal layer, forming a second mask layer to expose a portion of the electrode pattern corresponding to a channel area of the active layer, patterning the at least one first metal layer, thereby forming source and drain.

Abstract translation: 公开了一种制造具有增强的可靠性的薄膜晶体管（TFT）阵列基板的方法。 该方法包括形成包括至少一个第一金属层和由铜制成的第二金属层的多层结构，形成第一掩模层，第一掩模层包括对应于数据线的第一掩模区域和对应于电极图案的第二掩模区域以重叠 具有有源层，图案化多层结构，从而形成由多层结构构成的数据线，图案化第二金属层，从而形成由至少一个第一金属层构成的电极图案，形成第二掩模层以暴露 所述电极图案的部分对应于所述有源层的沟道区域，图案化所述至少一个第一金属层，从而形成源极和漏极。

公开(公告)号：US10572056B2

公开(公告)日：2020-02-25

申请号：US15391743

申请日：2016-12-27

Applicant: LG Display Co., Ltd.

Inventor： Hyangmyoung Gwon ,  SeungHee Nam ,  Kwon-Shik Park ,  DeukSu Lee ,  BuYeol Lee ,  Yangsik Lee

IPC: G06F3/041 ,  G06F3/044 ,  H01L27/32 ,  H01L51/52

Abstract: An organic light-emitting display panel having a built-in touchscreen includes a plurality of subpixels defined therein by a plurality of data lines and a plurality of gate lines, an encapsulation layer having an encapsulating function, and a color filter layer located on the encapsulation layer. An organic light-emitting display device includes the organic light-emitting display panel. Both the organic light-emitting display panel having a built-in touchscreen and the organic light-emitting display device having a built-in touchscreen is provided with a structure enabling a touchscreen disposed therewithin.

公开(公告)号：US10386956B2

公开(公告)日：2019-08-20

申请号：US15391625

申请日：2016-12-27

Applicant: LG Display Co., Ltd.

Inventor： Hyangmyoung Gwon ,  SeungHee Nam ,  Kwon-Shik Park ,  DeukSu Lee ,  BuYeol Lee ,  SuChang An

IPC: G06F3/041 ,  G06F3/044 ,  H01L27/32 ,  H01L51/52

Abstract: An organic light-emitting display panel having a built-in touchscreen and an organic light-emitting display device having a built-in touchscreen is disclosed. The organic light-emitting display panel includes a plurality of subpixels defined therein by a plurality of data lines and a plurality of gate lines, an encapsulation layer having an encapsulating function, and a color filter layer located on the encapsulation layer. The organic light-emitting display device includes the organic light-emitting display panel. Both the organic light-emitting display panel having a built-in touchscreen and the organic light-emitting display device having a built-in touchscreen is provided with a structure enabling a touchscreen disposed therewithin.

公开(公告)号：US09960282B2

公开(公告)日：2018-05-01

申请号：US15643030

申请日：2017-07-06

Applicant: LG Display Co., Ltd.

Inventor： Min-Cheol Kim ,  Youn-Gyoung Chang ,  Kwon-Shik Park ,  So-Hyung Lee ,  Ho-Young Jung ,  Ha-Jin Yoo ,  Jeong-Suk Yang

IPC: H01L21/00 ,  H01L29/786 ,  H01L21/02 ,  H01L21/477 ,  H01L29/10

CPC classification number: H01L29/7869 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L21/02667 ,  H01L21/477 ,  H01L29/1033 ,  H01L29/66969

Abstract: A method for manufacturing a semiconductor device is discussed. The method includes forming a gate electrode on a substrate, forming a gate insulating film over the substrate, depositing an In—Ga—Zn oxide over the gate insulating film while heating the substrate to a temperature of 200 to 300° C., an atomic percent ratio of Zn in the In—Ga—Zn oxide as-deposited being higher than that of In or Ga, heat-treating the deposited In—Ga—Zn oxide at a temperature of 200 to 350° C., thereby forming an active layer crystallized throughout an entire thickness of the active layer, and forming a source electrode and a drain electrode.

公开(公告)号：US10809829B2

公开(公告)日：2020-10-20

申请号：US15438302

申请日：2017-02-21

Applicant: LG Display Co., Ltd.

Inventor： Jae-Won Lee ,  Seung-Hee Nam ,  Min-Joo Kim ,  Kwon-Shik Park ,  Jae-Young Oh ,  Deuk-Su Lee ,  Bu-Yeol Lee ,  Eun-Hye Lee

IPC: G06F3/041 ,  F21V9/08 ,  G06F3/0354 ,  G06F3/044 ,  H01L27/32 ,  H01L51/52 ,  F21Y115/15

Abstract: Disclosed are an organic light emitting display device and a method of manufacturing the same to reduce thickness and weight. The organic light emitting display device with a touch sensor removes the necessity of an additional adhesion process by directly forming a touch sensing electrode and a touch driving electrode arranged in parallel and a color filter on an encapsulation layer covering a light emitting device, thereby simplifying a manufacturing process and reducing manufacturing costs.

公开(公告)号：US10411134B2

公开(公告)日：2019-09-10

申请号：US15934360

申请日：2018-03-23

Applicant: LG DISPLAY CO., LTD.

Inventor： Min-Cheol Kim ,  Youn-Gyoung Chang ,  Kwon-Shik Park ,  So-Hyung Lee ,  Ho-Young Jung ,  Ha-Jin Yoo ,  Jeong-Suk Yang

IPC: H01L29/786 ,  H01L21/02 ,  H01L21/477 ,  H01L29/10 ,  H01L29/66

Abstract: A display device includes a gate electrode on a substrate of a semiconductor device, a gate insulating film over the gate electrode, an active layer comprising an oxide including indium, zinc and gallium on the gate insulating film, and overlapping the gate electrode, and a source electrode and a drain electrode that are spaced apart from each other, wherein the active layer is formed from a zinc-rich target material, and an atomic % ratio of indium, zinc and gallium in the active layer is different from an atomic % ratio of the zinc-rich target material.

公开(公告)号：US09735281B2

公开(公告)日：2017-08-15

申请号：US14937598

申请日：2015-11-10

Applicant: LG Display Co., Ltd.

Inventor： Min-Cheol Kim ,  Youn-Gyoung Chang ,  Kwon-Shik Park ,  So-Hyung Lee ,  Ho-Young Jung ,  Ha-Jin Yoo ,  Jeong-Suk Yang

IPC: H01L29/12 ,  H01L29/786 ,  H01L21/02 ,  H01L21/477 ,  H01L29/10

CPC classification number: H01L29/7869 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L21/02667 ,  H01L21/477 ,  H01L29/1033 ,  H01L29/66969

Abstract: An oxide semiconductor crystallization method may include depositing an In—Ga—Zn oxide over the substrate while heating a substrate to a temperature of 200 to 300° C., and heat-treating the deposited In—Ga—Zn oxide at a temperature of 200 to 350° C., thereby forming an oxide semiconductor layer crystallized throughout an entire thickness thereof.