公开(公告)号：US20240224592A1

公开(公告)日：2024-07-04

申请号：US18454273

申请日：2023-08-23

Applicant: LG Display Co., Ltd.

Inventor： DaeHwan KIM ,  Jaeman JANG ,  Uyhyun CHOI ,  Min-Gu KANG ,  KyungChul OK ,  SeungChan CHOI

IPC: H10K59/121 ,  G09G3/3233 ,  H10K59/12 ,  H10K59/126

CPC classification number: H10K59/1213 ,  G09G3/3233 ,  H10K59/1201 ,  H10K59/126 ,  G09G2300/0842

Abstract: A thin film transistor, a manufacturing method of the thin film transistor and display apparatus including the thin film transistor are provided. The thin film transistor comprises an active layer and a gate electrode that partially overlaps the active layer, wherein the active layer includes a channel portion, a first connection portion contacting one side, namely a first side, of the channel portion and a second connection portion spaced apart from the first connection portion and contacting the other side, namely a second side of the channel portion, wherein the channel portion includes a first channel part overlapping the gate electrode and a second channel part not overlapping the gate electrode.

公开(公告)号：US20240222513A1

公开(公告)日：2024-07-04

申请号：US18378482

申请日：2023-10-10

Applicant: LG DISPLAY CO., LTD.

Inventor： Uyhyun CHOI ,  Jaeman JANG

IPC: H01L29/786 ,  H01L29/417 ,  H01L29/423 ,  H10K59/121

CPC classification number: H01L29/78645 ,  H01L29/41733 ,  H01L29/42324 ,  H01L29/42384 ,  H01L29/78633 ,  H01L29/78696 ,  H10K59/1213 ,  H10K59/1216

Abstract: A thin film transistor substrate and a display apparatus comprising the same include a substrate; an active layer disposed on the substrate; a first gate electrode disposed on the active layer; and a second gate electrode disposed on the active layer and disposed to be spaced apart from the first gate electrode; and a source electrode disposed on the active layer and connected to one side of the active layer and a drain electrode disposed on the active layer and connected to another side of the active layer, wherein the second gate electrode having a floating structure.