公开(公告)号：US20210193699A1

公开(公告)日：2021-06-24

申请号：US17196805

申请日：2021-03-09

Applicant: LG Display Co., Ltd.

Inventor： Jaeman JANG ,  SeHee PARK ,  DaeHwan KIM ,  PilSang YUN

IPC: H01L27/12 ,  H01L27/32

Abstract: A display apparatus includes a substrate; a pixel driving circuit on the substrate; and a display unit connected with the pixel driving circuit, wherein the pixel driving circuit includes a first thin film transistor and a second thin film transistor, wherein the first thin film transistor includes, a first gate electrode on the substrate, a first active layer spaced apart from the first gate electrode and overlapping at least a part of the first gate electrode, a first source electrode connected with the first active layer; and a first drain electrode spaced apart from the first source electrode and connected with the first active layer, and wherein the second thin film transistor includes, a second active layer on the substrate, and a second gate electrode spaced apart from the second active layer and partially overlapping at least a part of the second active layer, wherein the first gate electrode is disposed between the substrate and the first active layer, the second active layer is disposed between the substrate and the second gate electrode, and the first gate electrode and the second gate electrode are disposed at an opposite side with respect to the second active layer.

公开(公告)号：US20240222513A1

公开(公告)日：2024-07-04

申请号：US18378482

申请日：2023-10-10

Applicant: LG DISPLAY CO., LTD.

Inventor： Uyhyun CHOI ,  Jaeman JANG

IPC: H01L29/786 ,  H01L29/417 ,  H01L29/423 ,  H10K59/121

CPC classification number: H01L29/78645 ,  H01L29/41733 ,  H01L29/42324 ,  H01L29/42384 ,  H01L29/78633 ,  H01L29/78696 ,  H10K59/1213 ,  H10K59/1216

Abstract: A thin film transistor substrate and a display apparatus comprising the same include a substrate; an active layer disposed on the substrate; a first gate electrode disposed on the active layer; and a second gate electrode disposed on the active layer and disposed to be spaced apart from the first gate electrode; and a source electrode disposed on the active layer and connected to one side of the active layer and a drain electrode disposed on the active layer and connected to another side of the active layer, wherein the second gate electrode having a floating structure.

公开(公告)号：US20200212077A1

公开(公告)日：2020-07-02

申请号：US16525482

申请日：2019-07-29

Applicant: LG Display Co., Ltd.

Inventor： Jaeman JANG ,  SeHee PARK ,  DaeHwan KIM ,  PilSang YUN

IPC: H01L27/12 ,  H01L27/32

Abstract: A display apparatus includes a substrate; a pixel driving circuit on the substrate; and a display unit connected with the pixel driving circuit, wherein the pixel driving circuit includes a first thin film transistor and a second thin film transistor, wherein the first thin film transistor includes, a first gate electrode on the substrate, a first active layer spaced apart from the first gate electrode and overlapping at least a part of the first gate electrode, a first source electrode connected with the first active layer; and a first drain electrode spaced apart from the first source electrode and connected with the first active layer, and wherein the second thin film transistor includes, a second active layer on the substrate, and a second gate electrode spaced apart from the second active layer and partially overlapping at least a part of the second active layer, wherein the first gate electrode is disposed between the substrate and the first active layer, the second active layer is disposed between the substrate and the second gate electrode, and the first gate electrode and the second gate electrode are disposed at an opposite side with respect to the second active layer.

公开(公告)号：US20230018306A1

公开(公告)日：2023-01-19

申请号：US17958167

申请日：2022-09-30

Applicant: LG Display Co., Ltd.

Inventor： Jaeman JANG ,  PilSang YUN ,  Jiyong NOH ,  InTak CHO

IPC: H01L29/786 ,  H01L29/66

Abstract: Disclosed are a thin film transistor, a display apparatus comprising the thin film transistor, and a method for manufacturing the thin film transistor. The thin film transistor comprises an active layer, and a gate electrode spaced apart from the active layer and configured to have at least a portion overlapped with the active layer, wherein the active layer includes a silicon semiconductor layer, and an oxide semiconductor layer which contacts the silicon semiconductor layer, wherein at least a portion of the silicon semiconductor layer and at least a portion of the oxide semiconductor layer are overlapped with the gate electrode.

公开(公告)号：US20200212076A1

公开(公告)日：2020-07-02

申请号：US16517263

申请日：2019-07-19

Applicant: LG Display Co., Ltd.

Inventor： Jaeman JANG ,  InTak CHO

IPC: H01L27/12

Abstract: A thin film transistor includes an active layer on a substrate, a gate electrode configured to be spaced from the active layer and partially overlapped with the active layer, and a gate insulating layer, at least a part of the gate insulating layer being disposed between the active layer and the gate electrode, wherein the gate insulating layer includes a first gate insulating layer between the active layer and the gate electrode, and a second gate insulating layer configured to have a dielectric constant (k) which is different from a dielectric constant of the first gate insulating layer, and disposed in a same layer as the first gate insulating layer, and wherein at least a part of the second gate insulating layer is disposed between the active layer and the gate electrode.

公开(公告)号：US20190181274A1

公开(公告)日：2019-06-13

申请号：US16211151

申请日：2018-12-05

Applicant: LG Display Co., Ltd.

Inventor： Jiyong NOH ,  Jaeman JANG ,  JuHeyuck BAECK ,  PilSang YUN

IPC: H01L29/786 ,  H01L29/24 ,  H01L29/66

Abstract: A thin film transistor is provided. The thin film transistor includes an oxide semiconductor layer on a substrate, a gate electrode insulated from the oxide semiconductor layer to overlap at least a portion of the oxide semiconductor layer, a source electrode connected to the oxide semiconductor layer, and a drain electrode spaced apart from the source electrode and connected to the oxide semiconductor layer. The oxide semiconductor layer includes a first oxide semiconductor layer on the substrate and a second oxide semiconductor layer on the first oxide semiconductor layer, the first oxide semiconductor layer includes nitrogen of 1 at % to 5 at % concentration with respect to number of atoms, and the second oxide semiconductor layer has a nitrogen concentration which is lower than a nitrogen concentration of the first oxide semiconductor layer and a gradient of the nitrogen concentration such that the nitrogen concentration is lowered in a direction closer to the gate electrode.

公开(公告)号：US20210202760A1

公开(公告)日：2021-07-01

申请号：US17123011

申请日：2020-12-15

Applicant: LG Display Co., Ltd.

Inventor： Jaeman JANG ,  JungSeok SEO ,  PilSang YUN ,  InTak CHO

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/423 ,  H01L29/66

Abstract: A thin film transistor, a method for manufacturing the same and a display apparatus comprising the same are disclosed, in which the thin film transistor comprises a semiconductor formed on a substrate, a gate insulating film formed on the semiconductor, a gate electrode formed on the gate insulating film, a first insulating film formed on the substrate, a first conductor portion formed on the first insulating film and formed at one side of the semiconductor, and a second conductor portion formed on the first insulating film and formed at another side of the semiconductor, wherein a first portion of the first insulating film may be formed between the semiconductor and the first conductor portion, and a second portion of the first insulating film may be formed between the semiconductor and the second conductor portion.

公开(公告)号：US20210202754A1

公开(公告)日：2021-07-01

申请号：US17121248

申请日：2020-12-14

Applicant: LG Display Co., Ltd.

Inventor： Jaeman JANG ,  PilSang YUN ,  Jiyong NOH ,  InTak CHO

IPC: H01L29/786 ,  H01L29/66

Abstract: Disclosed are a thin film transistor, a display apparatus comprising the thin film transistor, and a method for manufacturing the thin film transistor. The thin film transistor comprises an active layer, and a gate electrode spaced apart from the active layer and configured to have at least a portion overlapped with the active layer, wherein the active layer includes a silicon semiconductor layer, and an oxide semiconductor layer which contacts the silicon semiconductor layer, wherein at least a portion of the silicon semiconductor layer and at least a portion of the oxide semiconductor layer are overlapped with the gate electrode.

公开(公告)号：US20190189805A1

公开(公告)日：2019-06-20

申请号：US16210862

申请日：2018-12-05

Applicant: LG Display Co., Ltd.

Inventor： Jaeman JANG

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/66 ,  G02F1/1368

Abstract: A thin film transistor includes an oxide semiconductor layer on a substrate. The oxide semiconductor layer includes a channel portion, a first channel connecting portion connected to a first end of the channel portion, and a second channel connecting portion connected to a second end of the channel portion. A thickness of the second channel connecting portion is different from a thickness of the first channel connecting portion. The first end of the channel portion has a same thickness as the thickness of the first channel connecting portion, and the second end of the channel portion has a same thickness as the thickness of the second channel connecting portion.

公开(公告)号：US20240224592A1

公开(公告)日：2024-07-04

申请号：US18454273

申请日：2023-08-23

Applicant: LG Display Co., Ltd.

Inventor： DaeHwan KIM ,  Jaeman JANG ,  Uyhyun CHOI ,  Min-Gu KANG ,  KyungChul OK ,  SeungChan CHOI

IPC: H10K59/121 ,  G09G3/3233 ,  H10K59/12 ,  H10K59/126

CPC classification number: H10K59/1213 ,  G09G3/3233 ,  H10K59/1201 ,  H10K59/126 ,  G09G2300/0842

Abstract: A thin film transistor, a manufacturing method of the thin film transistor and display apparatus including the thin film transistor are provided. The thin film transistor comprises an active layer and a gate electrode that partially overlaps the active layer, wherein the active layer includes a channel portion, a first connection portion contacting one side, namely a first side, of the channel portion and a second connection portion spaced apart from the first connection portion and contacting the other side, namely a second side of the channel portion, wherein the channel portion includes a first channel part overlapping the gate electrode and a second channel part not overlapping the gate electrode.