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    DISPLAY DEVICE AND DRIVING METHOD OF THE SAME
    3.
    发明申请
    DISPLAY DEVICE AND DRIVING METHOD OF THE SAME 有权

    公开(公告)号：US20220139318A1

    公开(公告)日：2022-05-05

    申请号：US17408136

    申请日：2021-08-20

    Applicant: LG Display Co., Ltd.

    Inventor： Min-Gu KANG ,  SeungChan CHOI

    IPC: G09G3/3233

    Abstract: Embodiments of the present disclosure relate to a display device and a driving method of the display device. More particularly, a subpixel includes a first control transistor for controlling a connection between a body of a driving transistor and a first node of the driving transistor, and a second control transistor for controlling a connection between the body of the driving transistor and a second node of the driving transistor, so that it is possible to improve mobility and on-current performance while increasing a S-factor of the driving transistor.

    THIN FILM TRANSISTOR AND DISPLAY DEVICE COMPRISING THE SAME
    6.
    发明申请
    THIN FILM TRANSISTOR AND DISPLAY DEVICE COMPRISING THE SAME 有权

    公开(公告)号：US20230111218A1

    公开(公告)日：2023-04-13

    申请号：US17963101

    申请日：2022-10-10

    Applicant: LG Display Co., Ltd.

    Inventor： Min-Gu KANG ,  Younghyun KO ,  SeungChan CHOI ,  Jaeman JANG

    IPC: H01L29/786 ,  H01L27/32 ,  H01L27/12

    Abstract: A thin film transistor and a display device comprising the same are provided. The thin film transistor comprises an active layer, and a gate electrode at least partially overlapped with the active layer, wherein the active layer includes a channel portion overlapped with the gate electrode, a first connection portion that is in contact with one side of the channel portion, and a second connection portion that is in contact with the other side of the channel portion, the channel portion includes a first channel area and a second channel area, each of the first channel area and the second channel area is extended from the first connection portion to the second connection portion, and a length of the first channel area is shorter than that of the second channel area.

    THIN FILM TRANSISTOR SUBSTRATE AND DISPLAY DEVICE COMPRISING THE SAME
    7.
    发明申请
    THIN FILM TRANSISTOR SUBSTRATE AND DISPLAY DEVICE COMPRISING THE SAME 有权

    公开(公告)号：US20220399464A1

    公开(公告)日：2022-12-15

    申请号：US17751975

    申请日：2022-05-24

    Applicant: LG DISPLAY CO., LTD.

    Inventor： Younghyun KO ,  SeungChan CHOI ,  Min-Gu KANG ,  Jaeman JANG

    IPC: H01L29/786 ,  H01L27/32

    Abstract: A thin film transistor substrate is provided, which comprises a substrate, a first thin film transistor on the substrate, and a second thin film transistor on the substrate, wherein the first thin film transistor includes a first active layer having a first channel portion, a first gate insulating layer on the first active layer, a first gate electrode on the first gate insulating layer, a first source electrode connected to the first active layer, and a first drain electrode spaced apart from the first source electrode and connected to the first active layer, the second thin film transistor includes a conductive material layer on the substrate, a first buffer layer on the conductive material layer, a second active layer having a second channel portion on the first buffer layer, a second gate insulating layer on the second active layer, a second gate electrode on the second gate insulating layer, a second source electrode connected to the second active layer, and a second drain electrode spaced apart from the second source electrode and connected to the second active layer, and the conductive material layer is connected to the second source electrode and overlaps the second channel portion. Also, a display device comprising the thin film transistor substrate is provided.

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