公开(公告)号：US10367104B2

公开(公告)日：2019-07-30

申请号：US15858798

申请日：2017-12-29

Applicant: LG ELECTRONICS INC.

Inventor： Jaewoo Choi ,  Chungyi Kim ,  Joohyun Koh

IPC: H01L31/044 ,  H01L31/0224 ,  H01L31/0216 ,  H01L31/18

Abstract: Disclosed is a solar cell including: a semiconductor substrate; a conductive region on or at the semiconductor substrate; an electrode electrically connected to the conductive region; and a passivation layer on a light incident surface of the semiconductor substrate. The passivation layer includes a first layer in contact with the light incident surface of the semiconductor substrate and formed of silicon oxynitride for ultraviolet stability. The first layer includes a plurality of phases of the silicon oxynitride, and the plurality of phases are formed of the silicon oxynitride having different compositions.

公开(公告)号：US10686087B2

公开(公告)日：2020-06-16

申请号：US15600042

申请日：2017-05-19

Applicant: LG ELECTRONICS INC.

Inventor： Chungyi Kim ,  Youngsung Yang ,  Jaewoo Choi ,  Mihee Heo

IPC: H01L31/0368 ,  H01L31/0745 ,  H01L31/18 ,  H01L31/068 ,  H01L31/0747 ,  H01L31/0216

Abstract: Disclosed is a solar cell including a control passivation film on one surface of a semiconductor substrate, and being formed of a dielectric material; and a semiconductor layer on the control passivation film, wherein the semiconductor layer including a first conductive region having a first conductive type and a second conductive region having a second conductive type opposite to the first conductive type. The semiconductor substrate includes a diffusion region including at least one of a first diffusion region and a second diffusion region adjacent to the control passivation film, wherein the first diffusion region being locally formed to correspond to the first conductive region and having a doping concentration lower than a doping concentration of the first conductive region, wherein the second diffusion region being locally formed to correspond to the second conductive region and having a doping concentration lower than a doping concentration of the second conductive region.

公开(公告)号：US20180158977A1

公开(公告)日：2018-06-07

申请号：US15831904

申请日：2017-12-05

Applicant: LG Electronics Inc.

Inventor： Jaewoo Choi ,  Chungyi Kim

IPC: H01L31/18 ,  H01L31/0236

CPC classification number: H01L31/18 ,  H01L31/02363 ,  H01L31/0745 ,  H01L31/0747 ,  H01L31/1804 ,  H01L31/182 ,  Y02E10/546 ,  Y02E10/547 ,  Y02P70/521

Abstract: A method of manufacturing a solar cell is disclosed. The method includes an overlap operation of overlapping front surfaces of two semiconductor substrates each other, a semiconductor layer depositing operation of simultaneously depositing a semiconductor layer on back surfaces of the two semiconductor substrates overlapping each other, a separating operation of separating the two semiconductor substrates overlapping each other, and a front surface texturing operation of texturing the front surfaces of the two semiconductor substrates after an etch stop layer forming operation.

公开(公告)号：US11121269B2

公开(公告)日：2021-09-14

申请号：US16430018

申请日：2019-06-03

Applicant: LG ELECTRONICS INC.

Inventor： Jaewoo Choi ,  Chungyi Kim ,  Joohyun Koh

IPC: H01L31/044 ,  H01L31/0224 ,  H01L31/0216 ,  H01L31/18

Abstract: A solar cell includes a semiconductor substrate; a conductive region on or at the semiconductor substrate; an electrode electrically connected to the conductive region; and a silicon oxynitride layer on a light incident surface of the semiconductor substrate, wherein the silicon oxynitride layer comprises a first phase region having a first oxygen content and a first nitrogen content; a second phase region having a second oxygen content higher than the first oxygen content and a second nitrogen content lower than the first nitrogen content; and a third phase region having a third oxygen content lower than the second oxygen content and a third nitrogen content lower than the second nitrogen content.

公开(公告)号：US10483427B2

公开(公告)日：2019-11-19

申请号：US15831904

申请日：2017-12-05

Applicant: LG Electronics Inc.

Inventor： Jaewoo Choi ,  Chungyi Kim

IPC: H01L31/18 ,  H01L31/0236 ,  H01L31/0745 ,  H01L31/0747

Abstract: A method of manufacturing a solar cell is disclosed. The method includes an overlap operation of overlapping front surfaces of two semiconductor substrates each other, a semiconductor layer depositing operation of simultaneously depositing a semiconductor layer on back surfaces of the two semiconductor substrates overlapping each other, a separating operation of separating the two semiconductor substrates overlapping each other, and a front surface texturing operation of texturing the front surfaces of the two semiconductor substrates after an etch stop layer forming operation.