公开(公告)号：US20250143057A1

公开(公告)日：2025-05-01

申请号：US18835513

申请日：2022-11-14

Applicant: LG ELECTRONICS INC.

Inventor： Dongjin YOON ,  Sangtae PARK ,  Sangyeol LEE ,  Jeongtak OH ,  Sungkyoon KIM ,  Sunwoo PARK

IPC: H10H29/855 ,  H10H20/813 ,  H10H29/01 ,  H10H29/854

Abstract: The present invention is applicable to the technical field of display devices and relates to a display device which uses, for example, a light-emitting diode (LED). To achieve the aforementioned objective, the present invention comprises: a wiring board; a light-emitting element which is composed of individual pixels and arranged on the wiring board; an insulation layer which is located at least on a side surface of the light-emitting element; and a black-colored layer which is located on the insulation layer, wherein the black-colored layer may include a material formed by modifying the material constituting the insulation layer.

公开(公告)号：US20220367425A1

公开(公告)日：2022-11-17

申请号：US17737648

申请日：2022-05-05

Applicant: LG ELECTRONICS INC.

Inventor： Youngkyu JEONG ,  Hwankuk YUH ,  Byeongjun CHOI ,  Sangyeol LEE ,  Jeongtak OH

IPC: H01L25/075 ,  H01L33/38 ,  H01L33/14

Abstract: A display device can include a substrate including a plurality of first sub-pixels, a plurality of second sub-pixels, a plurality of third sub-pixels; a plurality of first semiconductor light emitting devices disposed in the plurality of first sub-pixels, and configured to generate first color light of a first main wave; a plurality of second semiconductor light emitting devices disposed in the plurality of second sub-pixels, and configured to generate second color light of a second main wave; and a plurality of third semiconductor light emitting devices disposed in the plurality of third sub-pixels, and configured to generate third color light of a third main wave, in which at least some of the plurality of first semiconductor light emitting devices have different light emitting regions to compensate for a wave deviation of the first main wave.

公开(公告)号：US20250029546A1

公开(公告)日：2025-01-23

申请号：US18715517

申请日：2022-11-30

Applicant: LG ELECTRONICS INC.

Inventor： Daewoon HONG ,  Jeongtak OH ,  Baekjun KIM

IPC: G09G3/32

Abstract: A display device and an operating method thereof are disclosed. A display device, according to at least one of various embodiments of the present disclosure, may comprise a display panel including a plurality of light sources and a driver IC connected to the plurality of light sources; and a control circuit that supplies, to the driver IC, power voltage and a data signal through at least one power supply line and data line, respectively, according to an input signal, wherein the control circuit may apply a reference voltage to the at least one power supply line to activate all of the light sources in a row connected through the corresponding power supply line to which the reference voltage has been applied, and may control each of the activated light sources to emit light according to data inputted through each data line in units of columns.

公开(公告)号：US20230178694A1

公开(公告)日：2023-06-08

申请号：US18061318

申请日：2022-12-02

Applicant: LG ELECTRONICS INC.

Inventor： Sangyeol LEE ,  Sangtae PARK ,  Chansung JEONG ,  Jeongtak OH ,  Youngkyu JEONG ,  Sunwoo PARK

IPC: H01L33/54 ,  H01L25/16 ,  H01L33/60 ,  H01L23/00

CPC classification number: H01L33/54 ,  H01L24/08 ,  H01L25/167 ,  H01L33/60 ,  H01L33/56

Abstract: The present disclosure is applicable to the display device relevant technical field, and, for example, relates to a layered light emitting diode and display device using the same. Disclosed is a layered light emitting element, including a semiconductor structure having a multitude of semiconductor layers stacked to emit lights of first to third colors, respectively, first and second electrodes electrically connected to one side and the other side of the semiconductor layer on a first face of the semiconductor structure, respectively, a support layer located on a second face of the semiconductor structure, and a reflective layer located to surround a lateral side of the semiconductor structure at least.