公开(公告)号：US20220367425A1

公开(公告)日：2022-11-17

申请号：US17737648

申请日：2022-05-05

Applicant: LG ELECTRONICS INC.

Inventor： Youngkyu JEONG ,  Hwankuk YUH ,  Byeongjun CHOI ,  Sangyeol LEE ,  Jeongtak OH

IPC: H01L25/075 ,  H01L33/38 ,  H01L33/14

Abstract: A display device can include a substrate including a plurality of first sub-pixels, a plurality of second sub-pixels, a plurality of third sub-pixels; a plurality of first semiconductor light emitting devices disposed in the plurality of first sub-pixels, and configured to generate first color light of a first main wave; a plurality of second semiconductor light emitting devices disposed in the plurality of second sub-pixels, and configured to generate second color light of a second main wave; and a plurality of third semiconductor light emitting devices disposed in the plurality of third sub-pixels, and configured to generate third color light of a third main wave, in which at least some of the plurality of first semiconductor light emitting devices have different light emitting regions to compensate for a wave deviation of the first main wave.

公开(公告)号：US20230178694A1

公开(公告)日：2023-06-08

申请号：US18061318

申请日：2022-12-02

Applicant: LG ELECTRONICS INC.

Inventor： Sangyeol LEE ,  Sangtae PARK ,  Chansung JEONG ,  Jeongtak OH ,  Youngkyu JEONG ,  Sunwoo PARK

IPC: H01L33/54 ,  H01L25/16 ,  H01L33/60 ,  H01L23/00

CPC classification number: H01L33/54 ,  H01L24/08 ,  H01L25/167 ,  H01L33/60 ,  H01L33/56

Abstract: The present disclosure is applicable to the display device relevant technical field, and, for example, relates to a layered light emitting diode and display device using the same. Disclosed is a layered light emitting element, including a semiconductor structure having a multitude of semiconductor layers stacked to emit lights of first to third colors, respectively, first and second electrodes electrically connected to one side and the other side of the semiconductor layer on a first face of the semiconductor structure, respectively, a support layer located on a second face of the semiconductor structure, and a reflective layer located to surround a lateral side of the semiconductor structure at least.