公开(公告)号：US20190081025A1

公开(公告)日：2019-03-14

申请号：US15874720

申请日：2018-01-18

Applicant: LG ELECTRONICS INC.

Inventor： Younghak CHANG ,  Minwoo LEE ,  Yeonhong JUNG ,  Youngje JO

IPC: H01L25/075 ,  H01L33/02 ,  H01L33/00 ,  H01L33/20 ,  H01L33/62

CPC classification number: H01L25/0753 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/025 ,  H01L33/16 ,  H01L33/20 ,  H01L33/22 ,  H01L33/325 ,  H01L33/62 ,  H01L2933/0025

Abstract: A semiconductor light emitting device including a first conductive electrode and a second conductive electrode; a first conductive semiconductor layer on which the first conductive electrode is disposed; a second conductive semiconductor layer overlapping the first conductive semiconductor layer, on which the second conductive electrode is disposed; and an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer. Further, the second conductive semiconductor layer includes a first layer including a porous material capable of being electro-polished and disposed on an outer surface of the semiconductor light emitting device; a second layer disposed under the first layer and having a lower impurity concentration than the first layer; and a third layer disposed between the second layer and the active layer and having a higher impurity concentration than the second layer.