公开(公告)号：US10573770B2

公开(公告)日：2020-02-25

申请号：US15097897

申请日：2016-04-13

Applicant: LG ELECTRONICS INC.

Inventor： Sunho Kim ,  Heonmin Lee ,  Kwangsun Ji ,  Youngjoo Eo ,  Junghoon Choi ,  Sehwon Ahn

IPC: H01L31/18 ,  H01L31/0376 ,  H01L31/20 ,  H05K3/18 ,  C25D7/12 ,  H01L31/0224 ,  H01L31/02 ,  H01L31/0216 ,  H01L31/0236 ,  H05K3/24

Abstract: Discussed is a method of manufacturing a solar cell including preparing a single crystalline silicon substrate having a first conductive type impurity; forming a non-single crystalline silicon emitter layer having a second conductive type impurity opposite to the first conductive type impurity on a first surface of the single crystalline silicon substrate; forming a first transparent conductive oxide layer on the first surface of the single crystalline silicon substrate; forming a first electrode electrically connected to the first transparent conductive oxide layer; and forming a second electrode electrically connected to the single crystalline silicon substrate, wherein the forming of the first electrode includes; forming a first seed layer on the first transparent conductive oxide layer, and forming a first plating layer over the first seed layer by plating a first conductive material.

公开(公告)号：US09711667B2

公开(公告)日：2017-07-18

申请号：US15097870

申请日：2016-04-13

Applicant: LG ELECTRONICS INC.

Inventor： Sunho Kim ,  Heonmin Lee ,  Kwangsun Ji ,  Youngjoo Eo ,  Junghoon Choi ,  Sehwon Ahn

IPC: H01L31/00 ,  H01L31/0376 ,  H01L31/20 ,  H01L31/0224 ,  H05K3/18 ,  C25D7/12 ,  H01L31/18 ,  H01L31/02 ,  H01L31/0216 ,  H01L31/0236 ,  H05K3/24

CPC classification number: H01L31/03762 ,  C25D7/126 ,  H01L31/02008 ,  H01L31/02168 ,  H01L31/022425 ,  H01L31/022441 ,  H01L31/022466 ,  H01L31/02363 ,  H01L31/1884 ,  H01L31/20 ,  H01L31/202 ,  H05K3/188 ,  H05K3/246 ,  H05K2201/0108 ,  H05K2201/0326 ,  Y02E10/50

Abstract: Discussed is a solar cell including a single crystalline semiconductor substrate having a first transparent conductive oxide layer positioned on a non-single crystalline emitter layer; a second transparent conductive oxide layer positioned over a rear surface of the single crystalline semiconductor substrate; a first electrode part including a first seed layer directly positioned on the first transparent conductive oxide layer; and a second electrode part including a second seed layer directly positioned on the second transparent conductive oxide layer, wherein the first transparent conductive oxide layer and the first seed layer have different conductivities, and wherein the second transparent conductive oxide layer and the second seed layer have different conductivities.