公开(公告)号：US20220196595A1

公开(公告)日：2022-06-23

申请号：US17570273

申请日：2022-01-06

Applicant: LIFE TECHNOLOGIES CORPORATION

Inventor： James LI ,  Jordan OWENS ,  James BUSTILLO

IPC: G01N27/414 ,  G01N27/12

Abstract: In one embodiment, a chemical sensor is described. The chemical sensor includes a chemically-sensitive field effect transistor including a floating gate conductor having an upper surface, a first opening extending through a first material and through a portion of a second material located on the first material and a second opening extending from the bottom of the first opening to the top of a liner layer located on the upper surface of the floating gate conductor.

公开(公告)号：US20180106756A1

公开(公告)日：2018-04-19

申请号：US15700630

申请日：2017-09-11

Applicant: Life Technologies Corporation

Inventor： James LI ,  Jordan OWENS ,  James BUSTILLO

IPC: G01N27/414 ,  G01N27/12

CPC classification number: G01N27/4148 ,  B01L2300/0636 ,  G01N27/125 ,  G01N27/128 ,  G01N27/4143 ,  G01N27/4145

Abstract: In one embodiment, a chemical sensor is described. The chemical sensor includes a chemically-sensitive field effect transistor including a floating gate conductor having an upper surface, a first opening extending through a first material and through a portion of a second material located on the first material and a second opening extending from the bottom of the first opening to the top of a liner layer located on the upper surface of the floating gate conductor.

公开(公告)号：US20200049655A1

公开(公告)日：2020-02-13

申请号：US16544106

申请日：2019-08-19

Applicant: LIFE TECHNOLOGIES CORPORATION

Inventor： James LI ,  Jordan OWENS ,  James BUSTILLO

IPC: G01N27/414 ,  G01N27/12

Abstract: In one embodiment, a chemical sensor is described. The chemical sensor includes a chemically-sensitive field effect transistor including a floating gate conductor having an upper surface, a first opening extending through a first material and through a portion of a second material located on the first material and a second opening extending from the bottom of the first opening to the top of a liner layer located on the upper surface of the floating gate conductor.