公开(公告)号：US20250060674A1

公开(公告)日：2025-02-20

申请号：US18850628

申请日：2024-07-26

Applicant: Lam Research Corporation

Inventor： Da LI ,  Ji Yeon KIM ,  Younghee LEE ,  Hongxiang ZHAO ,  Yisi ZHU ,  Samantha S.H. TAN ,  Mengnan ZOU ,  Zhiwei SUN ,  Jun XUE

IPC: G03F7/36

Abstract: Process condition management facilitates the combination of dry development and post-development treatment into a single process chamber, eliminating the necessity for a post-dry development bake step in a separate chamber during semiconductor manufacturing. Thermal dry development and plasma dry development may be performed in the same chamber. Thermal dry development, plasma dry development and passivation such as an O2 flash treatment; or thermal dry development, plasma dry development, passivation and hardening operations are enabled without wafer transfer.

公开(公告)号：US20230118701A1

公开(公告)日：2023-04-20

申请号：US17914296

申请日：2021-04-06

Applicant: Lam Research Corporation

Inventor： Samantha SiamHwa TAN ,  Daniel PETER ,  Arunima Deya BALAN ,  Younghee LEE ,  Yang PAN

IPC: H01L21/311

Abstract: A method for selectively etching at least one feature in a silicon oxide region with respect to a lower oxygen containing region is provided. An etch gas comprising a metalloid or metal containing precursor and a halogen containing component is provided. The etch gas is formed into a plasma. At least one feature in the silicon oxide region is selectively etched with respect to the lower oxygen containing region, while simultaneously forming a metalloid or metal containing hardmask over the lower oxygen containing region.

公开(公告)号：US20230047486A1

公开(公告)日：2023-02-16

申请号：US17792996

申请日：2021-01-25

Applicant: Lam Research Corporation

Inventor： Younghee LEE ,  Daniel PETER ,  Samantha SiamHwa TAN

IPC: H01L21/033 ,  H01L21/02 ,  H01L21/311

Abstract: A method for forming etched features in a layer of a first material is provided. A layer of a second material is deposited over the layer of the first material. An alloy layer of the first material and the second material is formed between the layer of the first material and the layer of the second material. The layer of the first material is selectively etched with respect to the alloy layer, using the alloy layer as a hardmask.

公开(公告)号：US20220122848A1

公开(公告)日：2022-04-21

申请号：US17428560

申请日：2020-02-11

Applicant: Lam Research Corporation

Inventor： Daniel PETER ,  Da LI ,  Jengyi YU ,  Alexander KABANSKY ,  Katie NARDI ,  Samantha SiamHwa TAN ,  Younghee LEE

IPC: H01L21/311

Abstract: A method for selectively etching a silicon oxide region with respect to a lower oxygen silicon containing region is provided. A sacrificial mask selectively deposited on the lower oxygen silicon containing region with respect to the silicon oxide region. An atomic layer etch selectively etches the silicon oxide region with respect to the sacrificial mask on the lower oxygen silicon containing region.

公开(公告)号：US20220208555A1

公开(公告)日：2022-06-30

申请号：US17611074

申请日：2020-06-25

Applicant: Lam Research Corporation

Inventor： Younghee LEE ,  Daniel PETER ,  Samantha SiamHwa TAN ,  Yang PAN

IPC: H01L21/311 ,  H01L21/033 ,  H01L21/02

Abstract: A method for selectively etching a first region of a structure with respect to a second region of the structure is provided. The method comprises at least one cycle. Each cycle comprises selectively depositing an inhibitor layer on the first region of the structure, providing an atomic layer deposition over the structure, wherein the atomic layer deposition selectively deposits a mask on the second region of the structure with respect to the inhibitor layer, and selectively etching the first region of the structure with respect to the mask. The selectively depositing an inhibitor layer on the first region of the structure comprises providing an inhibitor layer gas and forming the inhibitor layer gas into inhibitor layer radicals, wherein the inhibitor layer radicals selectively deposit on the first region of the structure with respect to the second region of the structure.

公开(公告)号：US20210272814A1

公开(公告)日：2021-09-02

申请号：US17257241

申请日：2019-07-12

Applicant: Lam Research Corporation

Inventor： Daniel PETER ,  Jun XUE ,  Samantha SiamHwa TAN ,  Yang PAN ,  Younghee LEE ,  Alexander KABANSKY

IPC: H01L21/3065 ,  H01L21/02

Abstract: A method for selectively etching silicon germanium with respect to silicon in a stack on a chuck in an etch chamber is provided. The chuck is maintained at a temperature below 15° C. The stack is exposed to an etch gas comprising a fluorine containing gas to selectively etch silicon germanium with respect to silicon.