公开(公告)号：US20150034959A1

公开(公告)日：2015-02-05

申请号：US14246885

申请日：2014-04-07

Applicant: Lextar Electronics Corporation

Inventor： Yi-Ju CHEN ,  Der-Ling HSIA ,  Chih-Wei CHAO ,  Cheng-Ta KUO

IPC: H01L33/22 ,  H01L33/30

CPC classification number: H01L21/0243 ,  H01L21/0254 ,  H01L33/007 ,  H01L33/02 ,  H01L33/10 ,  Y10T428/24355

Abstract: A light emitting diode structure includes a patterned substrate, an N-type semiconductor layer, a light emitting layer, and a P-type semiconductor layer. Plural protruding portions are formed on a surface of the substrate. A horizontal projection of each of the protruding portions on the surface of the substrate has a projection width W1. An interval width W2 is formed between every two adjacent protruding portions. A vertical height h is formed between a peak of each of the protruding portions and the horizontal surface of the surface of the substrate. The value of {[(W1)/2+W2]/h} is substantially equal to tan 46°. The N-type semiconductor layer is located on the substrate and covers the protruding portions. The light emitting layer is located on the N-type semiconductor layer. The P-type semiconductor layer is located on the light emitting layer.

Abstract translation: 发光二极管结构包括图案化衬底，N型半导体层，发光层和P型半导体层。 在基板的表面上形成有多个突起部。 在基板的表面上的每个突出部分的水平突起具有突出宽度W1。 在每两个相邻的突出部之间形成间隔宽度W2。 在每个突出部分的峰部和基板的表面的水平表面之间形成垂直高度h。 {[（W1）/ 2 + W2] / h}的值基本上等于tan 46°。 N型半导体层位于基板上并覆盖突出部。 发光层位于N型半导体层上。 P型半导体层位于发光层上。