HEAT SINK FOR ELECTRICAL ELEMENTS AND LIGHT-EMITTING DEVICE CONTAINING THEREOF
    1.
    发明申请
    HEAT SINK FOR ELECTRICAL ELEMENTS AND LIGHT-EMITTING DEVICE CONTAINING THEREOF 有权
    用于电气元件的散热器及其包含的发光装置

    公开(公告)号:US20150077996A1

    公开(公告)日:2015-03-19

    申请号:US14290971

    申请日:2014-05-29

    Abstract: The disclosure provides a heat sink for electrical elements and a light-emitting device containing thereof. The heat sink includes a radiating substrate and at least one hollow radiating channel. In which, the hollow radiating channel is horizontally embedded in the radiating substrate, and has two openings disposed on the same site or the opposite sites of the radiating substrate, so that gas may flow in the hollow radiating channel and remove heat of the radiating substrate. And a light-emitting device containing the heat sink is also provided.

    Abstract translation: 本公开提供了用于电气元件的散热器和包含其的发光装置。 散热器包括辐射基板和至少一个中空辐射通道。 其中,中空辐射通道水平嵌入辐射基板,并且具有设置在辐射基板的相同位置或相对位置上的两个开口,使得气体可以在中空辐射通道中流动并且去除辐射基板的热量 。 还提供了包含散热器的发光装置。

    LIGHT-EMITTING DIODE DEVICE AND METHOD FOR FABRICATING THE SAME
    2.
    发明申请
    LIGHT-EMITTING DIODE DEVICE AND METHOD FOR FABRICATING THE SAME 有权
    发光二极管装置及其制造方法

    公开(公告)号:US20150214431A1

    公开(公告)日:2015-07-30

    申请号:US14298826

    申请日:2014-06-06

    Abstract: The invention provides a light-emitting diode device and a method for fabricating the same. The light-emitting diode device includes a metal substrate. A light-emitting diode structure is bonded on the metal substrate. The light-emitting diode structure includes a first type semiconductor substrate and a second type semiconductor layer. The first type semiconductor layer has a first surface and a second surface opposite to the first surface. The second type semiconductor layer is in contact with the metal substrate. A light-emitting layer is disposed between the first type semiconductor substrate and the second type semiconductor layer. A portion of the second surface and a sidewall adjacent to the second surface are uneven roughened surfaces.

    Abstract translation: 本发明提供一种发光二极管装置及其制造方法。 发光二极管装置包括金属基板。 发光二极管结构结合在金属基板上。 发光二极管结构包括第一类型半导体衬底和第二类型半导体层。 第一类型半导体层具有与第一表面相对的第一表面和第二表面。 第二类型半导体层与金属基板接触。 发光层设置在第一类型半导体衬底和第二类型半导体层之间。 第二表面的一部分和与第二表面相邻的侧壁是不均匀的粗糙表面。

    LAMP ASSEMBLY AND ITS FRAMELESS PANEL LIGHT
    3.
    发明申请

    公开(公告)号:US20190146141A1

    公开(公告)日:2019-05-16

    申请号:US16228708

    申请日:2018-12-20

    Abstract: A frameless panel light includes a light source module and a lamp cover having a front portion and side portions surrounding the front portion. The front and side portions define an accommodating space. The light source module is disposed in the accommodating space and includes a light source and a light guide plate. The light guide plate includes a light-transmissive substrate including first and second major surfaces and a side surface connecting the first and second major surfaces and a microstructure formed on the first major surface and including a recess and an annular groove around the recess. The annular groove has a depth greater than that of the recess. A bottom of the recess is at higher elevation than the first major surface from the second major surface. The annular groove has a protruding portion protruding from a bottom of the annular groove.

    PATTERNED SUBSTRATE AND LIGHT EMITTING DIODE STRUCTURE HAVING THE SAME
    4.
    发明申请
    PATTERNED SUBSTRATE AND LIGHT EMITTING DIODE STRUCTURE HAVING THE SAME 审中-公开
    图案基板和发光二极管结构

    公开(公告)号:US20150034959A1

    公开(公告)日:2015-02-05

    申请号:US14246885

    申请日:2014-04-07

    Abstract: A light emitting diode structure includes a patterned substrate, an N-type semiconductor layer, a light emitting layer, and a P-type semiconductor layer. Plural protruding portions are formed on a surface of the substrate. A horizontal projection of each of the protruding portions on the surface of the substrate has a projection width W1. An interval width W2 is formed between every two adjacent protruding portions. A vertical height h is formed between a peak of each of the protruding portions and the horizontal surface of the surface of the substrate. The value of {[(W1)/2+W2]/h} is substantially equal to tan 46°. The N-type semiconductor layer is located on the substrate and covers the protruding portions. The light emitting layer is located on the N-type semiconductor layer. The P-type semiconductor layer is located on the light emitting layer.

    Abstract translation: 发光二极管结构包括图案化衬底,N型半导体层,发光层和P型半导体层。 在基板的表面上形成有多个突起部。 在基板的表面上的每个突出部分的水平突起具有突出宽度W1。 在每两个相邻的突出部之间形成间隔宽度W2。 在每个突出部分的峰部和基板的表面的水平表面之间形成垂直高度h。 {[(W1)/ 2 + W2] / h}的值基本上等于tan 46°。 N型半导体层位于基板上并覆盖突出部。 发光层位于N型半导体层上。 P型半导体层位于发光层上。

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