公开(公告)号：US20210280742A1

公开(公告)日：2021-09-09

申请号：US17033700

申请日：2020-09-26

Applicant: Lextar Electronics Corporation

Inventor： Pei-Shiu TSAI ,  Yi-Ju CHEN ,  Nai-Wei HSU ,  Wei-Chang YU

IPC: H01L33/10 ,  H01L33/62

Abstract: A light-emitting element is provided, including a semiconductor structure, a reflective structure, first and second insulating structures, a conductive structure, and first and second pads. The reflective structure is disposed on the semiconductor structure. The first insulating structure includes first and second protrusions covering first and second portions respectively, and a first recession exposes a third portion between the first and second portions. The conductive structure includes first and second conductive portion. The first conductive portion is disposed on the first protrusion to contact the semiconductor structure. The second conductive portion is disposed on the second protrusion to contact the third portion through the first recession. The first and second pads are respectively disposed on the first and second conductive portions. Each of the structures below the first and second pads are in flat-type bonding to enhance stress resistance.

公开(公告)号：US20150034959A1

公开(公告)日：2015-02-05

申请号：US14246885

申请日：2014-04-07

Applicant: Lextar Electronics Corporation

Inventor： Yi-Ju CHEN ,  Der-Ling HSIA ,  Chih-Wei CHAO ,  Cheng-Ta KUO

IPC: H01L33/22 ,  H01L33/30

CPC classification number: H01L21/0243 ,  H01L21/0254 ,  H01L33/007 ,  H01L33/02 ,  H01L33/10 ,  Y10T428/24355

Abstract: A light emitting diode structure includes a patterned substrate, an N-type semiconductor layer, a light emitting layer, and a P-type semiconductor layer. Plural protruding portions are formed on a surface of the substrate. A horizontal projection of each of the protruding portions on the surface of the substrate has a projection width W1. An interval width W2 is formed between every two adjacent protruding portions. A vertical height h is formed between a peak of each of the protruding portions and the horizontal surface of the surface of the substrate. The value of {[(W1)/2+W2]/h} is substantially equal to tan 46°. The N-type semiconductor layer is located on the substrate and covers the protruding portions. The light emitting layer is located on the N-type semiconductor layer. The P-type semiconductor layer is located on the light emitting layer.

Abstract translation: 发光二极管结构包括图案化衬底，N型半导体层，发光层和P型半导体层。 在基板的表面上形成有多个突起部。 在基板的表面上的每个突出部分的水平突起具有突出宽度W1。 在每两个相邻的突出部之间形成间隔宽度W2。 在每个突出部分的峰部和基板的表面的水平表面之间形成垂直高度h。 {[（W1）/ 2 + W2] / h}的值基本上等于tan 46°。 N型半导体层位于基板上并覆盖突出部。 发光层位于N型半导体层上。 P型半导体层位于发光层上。