公开(公告)号：US20250096147A1

公开(公告)日：2025-03-20

申请号：US18470421

申请日：2023-09-20

Applicant: MACRONIX International Co., Ltd.

Inventor： Chiung Jung Tu ,  Chih-Hao Huang ,  Yu-Lin Liu ,  Chin-Cheng Yang

IPC: H01L23/544

Abstract: An overlay mark includes a previous layer mark and a current layer mark. The previous layer mark includes a plurality of first work zones. Each first working zone includes a first sub-region and a second sub-region, wherein the first sub-region is closer to a center point of the previous layer mark than the second sub-region. The previous layer mark includes a first mark and an auxiliary mark respectively in the first sub-region and the second sub-region of each first working zone. The current layer mark includes a plurality of second working zones. Each second working zone includes a first sub-region and a second sub-region. The current layer mark includes a second mark disposed in the second sub-region of each second working zone. The overlay mark may be applied in the process of manufacturing a 3D NAND flash memory with high capacity and high performance.

公开(公告)号：US10103166B1

公开(公告)日：2018-10-16

申请号：US15483019

申请日：2017-04-10

Applicant: MACRONIX INTERNATIONAL CO., LTD.

Inventor： Kuan-Cheng Liu ,  Yu-Lin Liu ,  Cheng-Wei Lin ,  Chin-Cheng Yang ,  Shou-Wei Huang

IPC: H01L29/792 ,  H01L27/11582 ,  H01L23/544 ,  H01L23/528 ,  H01L21/28 ,  H01L21/768 ,  H01L21/027 ,  H01L21/311

Abstract: A semiconductor device includes a semiconductor substrate, a circuit unit and an align mark. The circuit unit is disposed on the semiconductor substrate. The align mark includes a first part and a second part respectively formed in the semiconductor substrate and adjacent to two opposite sides of the circuit unit, wherein the first part and the second part depart from each other for a predetermined distance along with a first direction.

公开(公告)号：US20180294276A1

公开(公告)日：2018-10-11

申请号：US15483019

申请日：2017-04-10

Applicant: MACRONIX INTERNATIONAL CO., LTD.

Inventor： Kuan-Cheng Liu ,  Yu-Lin Liu ,  Cheng-Wei Lin ,  Chin-Cheng Yang ,  Shou-Wei Huang

IPC: H01L27/11582 ,  H01L23/544 ,  H01L23/528 ,  H01L21/28 ,  H01L21/768 ,  H01L21/027 ,  H01L21/311

Abstract: A semiconductor device includes a semiconductor substrate, a circuit unit and an align mark. The circuit unit is disposed on the semiconductor substrate. The align mark includes a first part and a second part respectively formed in the semiconductor substrate and adjacent to two opposite sides of the circuit unit, wherein the first part and the second part depart from each other for a predetermined distance along with a first direction.