公开(公告)号：US20250059646A1

公开(公告)日：2025-02-20

申请号：US18784827

申请日：2024-07-25

Applicant: Micron Technology, Inc.

Inventor： Jean-Sebastien Materne Lehn ,  Francois H. Fabreguette ,  Timothy A. Quick

IPC: C23C16/455 ,  H01L21/02

Abstract: Methods, systems, and devices for methods for depositing germanium films by atomic layer deposition are described. For instance, a device may expose a base material (e.g., multiple stacks of materials) to a first precursor to form a germanium compound on the base material, the first precursor including a germanium amidinate. In some examples, the germanium compound may include germanium and at least one leaving group. The device may react a second precursor with the germanium compound and may form a layer of germanium on the base material based on exposing the base material to the first precursor and reacting the second precursor with the germanium compound. In some examples, the device may remove the at least one leaving group from the germanium compound based on reacting the second precursor with the germanium compound.

公开(公告)号：US10651375B2

公开(公告)日：2020-05-12

申请号：US16160518

申请日：2018-10-15

Applicant: Micron Technology, Inc.

Inventor： Timothy A. Quick ,  Eugene P. Marsh ,  Stefan Uhlenbrock ,  Chet E. Carter ,  Scott E. Sills

IPC: H01L45/00

Abstract: Memory cells are disclosed, which cells include a cell material and an ion-source material over the cell material. A discontinuous interfacial material is included between the cell material and the ion-source material. Also disclosed are fabrication methods and semiconductor devices including the disclosed memory cells.

公开(公告)号：US10283705B2

公开(公告)日：2019-05-07

申请号：US15915861

申请日：2018-03-08

Applicant: Micron Technology, Inc.

Inventor： Timothy A. Quick ,  Eugene P. Marsh ,  Stefan Uhlenbrock ,  Chet E. Carter ,  Scott E. Sills

IPC: H01L45/00

Abstract: Memory cells are disclosed, which cells include a cell material and an ion-source material over the cell material. A discontinuous interfacial material is included between the cell material and the ion-source material. Also disclosed are fabrication methods and semiconductor devices including the disclosed memory cells.

公开(公告)号：US20180198063A1

公开(公告)日：2018-07-12

申请号：US15915861

申请日：2018-03-08

Applicant: Micron Technology, Inc.

Inventor： Timothy A. Quick ,  Eugene P. Marsh ,  Stefan Uhlenbrock ,  Chet E. Carter ,  Scott E. Sills

IPC: H01L45/00

CPC classification number: H01L45/085 ,  H01L45/1233 ,  H01L45/141 ,  H01L45/1608 ,  H01L45/1616

Abstract: Memory cells are disclosed, which cells include a cell material and an ion-source material over the cell material. A discontinuous interfacial material is included between the cell material and the ion-source material. Also disclosed are fabrication methods and semiconductor devices including the disclosed memory cells.

公开(公告)号：US09935264B2

公开(公告)日：2018-04-03

申请号：US14677571

申请日：2015-04-02

Applicant: Micron Technology, Inc.

Inventor： Timothy A. Quick ,  Eugene P. Marsh ,  Stefan Uhlenbrock ,  Chet E. Carter ,  Scott E. Sills

IPC: H01L45/00

CPC classification number: H01L45/085 ,  H01L45/1233 ,  H01L45/141 ,  H01L45/1608 ,  H01L45/1616

Abstract: Memory cells are disclosed, which cells include a cell material and an ion-source material over the cell material. A discontinuous interfacial material is included between the cell material and the ion-source material. Also disclosed are fabrication methods and semiconductor devices including the disclosed memory cells.

公开(公告)号：US09865456B1

公开(公告)日：2018-01-09

申请号：US15235365

申请日：2016-08-12

Applicant: Micron Technology, Inc.

Inventor： Sumeet C. Pandey ,  Brenda D. Kraus ,  Stefan Uhlenbrock ,  John A. Smythe ,  Timothy A. Quick

IPC: H01L21/02

CPC classification number: H01L21/0228 ,  H01L21/0217 ,  H01L21/02274

Abstract: Methods of forming silicon nitride. Silicon nitride is formed on a substrate by atomic layer deposition at a temperature of less than or equal to about 275° C. The as-formed silicon nitride is exposed to a plasma. The silicon nitride may be formed as a portion of silicon nitride and at least one other portion of silicon nitride. The portion of silicon nitride and the at least one other portion of silicon nitride may be exposed to a plasma treatment. Methods of forming a semiconductor structure are also disclosed, as are semiconductor structures and silicon precursors.

公开(公告)号：US09269900B2

公开(公告)日：2016-02-23

申请号：US14313850

申请日：2014-06-24

Applicant: Micron Technology, Inc.

Inventor： Eugene P. Marsh ,  Timothy A. Quick ,  Stefan Uhlenbrock

IPC: H01L45/00 ,  C23C16/28 ,  C23C16/30 ,  C23C16/455

CPC classification number: H01L45/144 ,  C23C16/28 ,  C23C16/305 ,  C23C16/45523 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/1616 ,  H01L45/1683

Abstract: A method of forming a phase change material which having germanium and tellurium therein includes depositing a germanium-containing material over a substrate. Such material includes elemental-form germanium. A gaseous tellurium-comprising precursor is flowed to the germanium-comprising material and tellurium is removed from the gaseous precursor to react with the elemental-form germanium in the germanium-comprising material to form a germanium and tellurium-comprising compound of a phase change material over the substrate. Other implementations are disclosed.

Abstract translation: 形成其中具有锗和碲的相变材料的方法包括在基底上沉积含锗材料。 这种材料包括元素形式的锗。 将含气态碲前驱体流入含锗材料，并从气态前驱体中除去碲以与含锗材料中的元素形式的锗反应，形成含锗和碲化合物的相变材料 在基板上。 公开了其他实现。

公开(公告)号：US20150214477A1

公开(公告)日：2015-07-30

申请号：US14677571

申请日：2015-04-02

Applicant: Micron Technology, Inc.

Inventor： Timothy A. Quick ,  Eugene P. Marsh ,  Stefan Uhlenbrock ,  Chet E. Carter ,  Scott E. Sills

IPC: H01L45/00

CPC classification number: H01L45/085 ,  H01L45/1233 ,  H01L45/141 ,  H01L45/1608 ,  H01L45/1616

Abstract: Memory cells are disclosed, which cells include a cell material and an ion-source material over the cell material. A discontinuous interfacial material is included between the cell material and the ion-source material. Also disclosed are fabrication methods and semiconductor devices including the disclosed memory cells.

Abstract translation: 公开了存储器单元，其中电池包括细胞材料和细胞材料上的离子源材料。 细胞材料和离子源材料之间包含不连续的界面材料。 还公开了包括所公开的存储单元的制造方法和半导体器件。

公开(公告)号：US20220310637A1

公开(公告)日：2022-09-29

申请号：US17216269

申请日：2021-03-29

Applicant: Micron Technology, Inc.

Inventor： Aaron Michael Lowe ,  Zhuo Chen ,  Marko Milojevic ,  Timothy A. Quick ,  Richard J. Hill ,  Scott E. Sills

IPC: H01L27/11514 ,  H01L27/108 ,  H01L27/12 ,  H01L27/13

Abstract: Some embodiments include an integrated transistor having an active region comprising semiconductor material. A conductive gating structure is adjacent to the active region. The conductive gating structure includes an inner region proximate the active region and includes an outer region distal from the active region. The inner region includes a first material containing titanium and nitrogen, and the outer region includes a metal-containing second material. The second material has a higher conductivity than the first material. Some embodiments include integrated assemblies. Some embodiments include methods of forming integrated assemblies.

公开(公告)号：US20220238340A1

公开(公告)日：2022-07-28

申请号：US17653790

申请日：2022-03-07

Applicant: Micron Technology, Inc.

Inventor： Gurtej S. Sandhu ,  Marko Milojevic ,  John A. Smythe ,  Timothy A. Quick ,  Sumeet C. Pandey

IPC: H01L21/28 ,  H01L29/40 ,  H01L29/66 ,  H01L29/423

Abstract: A method of forming a structure comprises forming a pattern of elongate features extending vertically from a base structure. Conductive material is formed on the elongate features. After completing the forming of the pattern of elongate features, the elongate features, the conductive material, or both is (are) exposed to at least one surface treatment gas. The at least one surface treatment gas comprises at least one species formulated to diminish attractive or cohesive forces at a surface of the conductive material. Apparatus and additional methods are also described.