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公开(公告)号：US20130269860A1
公开(公告)日：2013-10-17
申请号：US13448939
申请日：2012-04-17
申请人： Maha M. Khayyat , Norma E. Sosa Cortes , Stephen W. Bedell , Keith E. Fogel , Devendra K. Sadana
发明人： Maha M. Khayyat , Norma E. Sosa Cortes , Stephen W. Bedell , Keith E. Fogel , Devendra K. Sadana
CPC分类号： B32B38/10 , B32B2457/14 , H01L21/02002 , H01L21/304 , H01L21/6836 , H01L31/1892 , Y02E10/50
摘要： A stressor layer is formed atop a base substrate at a first temperature which induces a first tensile stress in the base substrate that is below a fracture toughness of base substrate. The base substrate and the stressor layer are then brought to a second temperature which is less than the first temperature. The second temperature induces a second tensile stress in the stressor layer which is greater than the first tensile stress and which is sufficient to allow for spalling mode fracture to occur within the base substrate. The base substrate is spalled at the second temperature to form a spalled material layer. Spalling occurs at a fracture depth which is dependent upon the fracture toughness of the base substrate, stress level within the base substrate, and the second tensile stress of the stressor layer induced at the second temperature.
摘要翻译： 在第一温度下在基底顶部形成应力层，该第一温度在基础基板中引起低于基底基板的断裂韧性的第一拉伸应力。 然后使基底和应力层达到小于第一温度的第二温度。 第二温度在应力层中引起第二拉伸应力，其大于第一拉伸应力，并且其足以允许在基底基底内发生剥落模式断裂。 基底基板在第二温度下剥离以形成剥离的材料层。 剥离发生在取决于基底的断裂韧性，基底衬底内的应力水平以及在第二温度下引起的应力层的第二拉伸应力的断裂深度。
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公开(公告)号：US20120309269A1
公开(公告)日：2012-12-06
申请号：US13150813
申请日：2011-06-01
申请人： Maha M. Khayyat , Norma E. Sosa Cortes , Katherine L. Saenger , Stephen W. Bedell , Devendra K. Sadana
发明人： Maha M. Khayyat , Norma E. Sosa Cortes , Katherine L. Saenger , Stephen W. Bedell , Devendra K. Sadana
IPC分类号： B24B1/00
CPC分类号： H01L21/187
摘要： Method to (i) introduce additional control into a material spalling process, thus improving both the crack initiation and propagation, and (ii) increase the range of selectable spalling depths are provided. In one embodiment, the method includes providing a stressor layer on a surface of a base substrate at a first temperature which is room temperature. Next, the base substrate including the stressor layer is brought to a second temperature which is less than room temperature. The base substrate is spalled at the second temperature to form a spalled material layer. Thereafter, the spalled material layer is returned to room temperature, i.e., the first temperature.
摘要翻译： 方法：（i）对材料剥落过程引入额外的控制，从而改善裂纹的产生和传播，并提供（ii）提高选择性剥落深度的范围。 在一个实施例中，该方法包括在室温下的第一温度下在基底基板的表面上提供应力层。 接下来，包括应力层的基底衬底达到小于室温的第二温度。 基底基板在第二温度下剥离以形成剥离的材料层。 此后，剥离的材料层返回到室温，即第一温度。
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公开(公告)号：US09018082B2
公开(公告)日：2015-04-28
申请号：US13555252
申请日：2012-07-23
摘要： A method of fabricating templated semiconductor nanowires on a surface of a semiconductor substrate for use in semiconductor device applications is provided. The method includes controlling the spatial placement of the semiconductor nanowires by using an oxygen reactive seed material. The present invention also provides semiconductor structures including semiconductor nanowires. In yet another embodiment, patterning of a compound semiconductor substrate or other like substrate which is capable of forming a compound semiconductor alloy with an oxygen reactive element during a subsequent annealing step is provided. This embodiment provides a patterned substrate that can be used in various applications including, for example, in semiconductor device manufacturing, optoelectronic device manufacturing and solar cell device manufacturing.
摘要翻译： 提供了一种在用于半导体器件应用的半导体衬底的表面上制造模板化半导体纳米线的方法。 该方法包括通过使用氧反应种子材料来控制半导体纳米线的空间位置。 本发明还提供包括半导体纳米线的半导体结构。 在又一个实施例中，提供了在随后的退火步骤期间能够与氧反应元件形成化合物半导体合金的化合物半导体衬底或其它类似衬底的图案化。 该实施例提供可用于各种应用的图案化衬底，包括例如半导体器件制造，光电器件制造和太阳能电池器件制造。
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公开(公告)号：US09082687B2
公开(公告)日：2015-07-14
申请号：US13555242
申请日：2012-07-23
摘要： A method of fabricating templated semiconductor nanowires on a surface of a semiconductor substrate for use in semiconductor device applications is provided. The method includes controlling the spatial placement of the semiconductor nanowires by using an oxygen reactive seed material. The present invention also provides semiconductor structures including semiconductor nanowires. In yet another embodiment, patterning of a compound semiconductor substrate or other like substrate which is capable of forming a compound semiconductor alloy with an oxygen reactive element during a subsequent annealing step is provided. This embodiment provides a patterned substrate that can be used in various applications including, for example, in semiconductor device manufacturing, optoelectronic device manufacturing and solar cell device manufacturing.
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公开(公告)号：US08349715B2
公开(公告)日：2013-01-08
申请号：US12696417
申请日：2010-01-29
IPC分类号： H01L21/20
摘要： A method of fabricating templated semiconductor nanowires on a surface of a semiconductor substrate for use in semiconductor device applications is provided. The method includes controlling the spatial placement of the semiconductor nanowires by using an oxygen reactive seed material. The present invention also provides semiconductor structures including semiconductor nanowires. In yet another embodiment, patterning of a compound semiconductor substrate or other like substrate which is capable of forming a compound semiconductor alloy with an oxygen reactive element during a subsequent annealing step is provided. This embodiment provides a patterned substrate that can be used in various applications including, for example, in semiconductor device manufacturing, optoelectronic device manufacturing and solar cell device manufacturing.
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公开(公告)号：US20120289035A1
公开(公告)日：2012-11-15
申请号：US13555252
申请日：2012-07-23
IPC分类号： H01L21/20
摘要： A method of fabricating templated semiconductor nanowires on a surface of a semiconductor substrate for use in semiconductor device applications is provided. The method includes controlling the spatial placement of the semiconductor nanowires by using an oxygen reactive seed material. The present invention also provides semiconductor structures including semiconductor nanowires. In yet another embodiment, patterning of a compound semiconductor substrate or other like substrate which is capable of forming a compound semiconductor alloy with an oxygen reactive element during a subsequent annealing step is provided. This embodiment provides a patterned substrate that can be used in various applications including, for example, in semiconductor device manufacturing, optoelectronic device manufacturing and solar cell device manufacturing.
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公开(公告)号：US20120286235A1
公开(公告)日：2012-11-15
申请号：US13555242
申请日：2012-07-23
IPC分类号： H01L21/20 , H01L29/66 , H01L21/306 , B82Y40/00
摘要： A method of fabricating templated semiconductor nanowires on a surface of a semiconductor substrate for use in semiconductor device applications is provided. The method includes controlling the spatial placement of the semiconductor nanowires by using an oxygen reactive seed material. The present invention also provides semiconductor structures including semiconductor nanowires. In yet another embodiment, patterning of a compound semiconductor substrate or other like substrate which is capable of forming a compound semiconductor alloy with an oxygen reactive element during a subsequent annealing step is provided. This embodiment provides a patterned substrate that can be used in various applications including, for example, in semiconductor device manufacturing, optoelectronic device manufacturing and solar cell device manufacturing.
摘要翻译： 提供了一种在用于半导体器件应用的半导体衬底的表面上制造模板化半导体纳米线的方法。 该方法包括通过使用氧反应种子材料来控制半导体纳米线的空间位置。 本发明还提供包括半导体纳米线的半导体结构。 在又一个实施例中，提供了在随后的退火步骤期间能够与氧反应元件形成化合物半导体合金的化合物半导体衬底或其它类似衬底的图案化。 该实施例提供可用于各种应用的图案化衬底，包括例如半导体器件制造，光电器件制造和太阳能电池器件制造。
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公开(公告)号：US20110186804A1
公开(公告)日：2011-08-04
申请号：US12696417
申请日：2010-01-29
摘要： A method of fabricating templated semiconductor nanowires on a surface of a semiconductor substrate for use in semiconductor device applications is provided. The method includes controlling the spatial placement of the semiconductor nanowires by using an oxygen reactive seed material. The present invention also provides semiconductor structures including semiconductor nanowires. In yet another embodiment, patterning of a compound semiconductor substrate or other like substrate which is capable of forming a compound semiconductor alloy with an oxygen reactive element during a subsequent annealing step is provided. This embodiment provides a patterned substrate that can be used in various applications including, for example, in semiconductor device manufacturing, optoelectronic device manufacturing and solar cell device manufacturing.
摘要翻译： 提供了一种在用于半导体器件应用的半导体衬底的表面上制造模板化半导体纳米线的方法。 该方法包括通过使用氧反应种子材料来控制半导体纳米线的空间位置。 本发明还提供包括半导体纳米线的半导体结构。 在又一个实施例中，提供了在随后的退火步骤期间能够与氧反应元件形成化合物半导体合金的化合物半导体衬底或其它类似衬底的图案化。 该实施例提供可用于各种应用的图案化衬底，包括例如半导体器件制造，光电器件制造和太阳能电池器件制造。
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9.发明授权High resolution AFM tips containing an aluminum-doped semiconductor nanowire 有权包含铝掺杂半导体纳米线的高分辨率AFM尖端公开(公告)号：US08683611B2
公开(公告)日：2014-03-25
申请号：US13608372
申请日：2012-09-10
申请人： Guy Cohen , Mark C. Reuter , Brent A. Wacaser , Maha M. Khayyat
发明人： Guy Cohen , Mark C. Reuter , Brent A. Wacaser , Maha M. Khayyat
摘要： A high resolution AFM tip is provided which includes an AFM probe including a semiconductor cantilever having a semiconductor pyramid extending upward from a surface of the semiconductor cantilever, the semiconductor pyramid having an apex. The AFM tip also includes a single Al-doped semiconductor nanowire on the exposed apex of the semiconductor pyramid, wherein the single Al-doped semiconductor nanowire is epitaxial with respect to the apex of the semiconductor pyramid.
摘要翻译： 提供了一种高分辨率AFM尖端，其包括AFM探针，其包括具有从半导体悬臂的表面向上延伸的半导体金字塔的半导体悬臂，所述半导体金字塔具有顶点。 AFM尖端还包括在半导体金字塔的暴露的顶点上的单个Al掺杂的半导体纳米线，其中单个Al掺杂的半导体纳米线相对于半导体金字塔的顶点是外延的。
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公开(公告)号：US08474061B2
公开(公告)日：2013-06-25
申请号：US13608396
申请日：2012-09-10
申请人： Guy Cohen , Mark C. Reuter , Brent A. Wacaser , Maha M. Khayyat
发明人： Guy Cohen , Mark C. Reuter , Brent A. Wacaser , Maha M. Khayyat
摘要： A method of fabricating high resolution atomic force microscopy (AFM) tips including a single semiconductor nanowire grown at an apex of a semiconductor pyramid of each AFM tip is provided. The semiconductor nanowire that is grown has a controllable diameter and a high aspect ratio, without significant tapering from the tip of the semiconductor nanowire to its base. The method includes providing an AFM probe including a semiconductor cantilever having a semiconductor pyramid extending upward from a surface of said semiconductor cantilever. The semiconductor pyramid has an apex. A patterned oxide layer is formed on the AFM probe. The patterned oxide layer has an opening that exposes the apex of the semiconductor pyramid. A single semiconductor nanowire is grown on the exposed apex of the semiconductor pyramid utilizing a non-oxidized Al seed material as a catalyst for nanowire growth.
摘要翻译： 提供了一种制造高分辨率原子力显微镜（AFM）尖端的方法，其包括在每个AFM尖端的半导体金字塔的顶点处生长的单个半导体纳米线。 生长的半导体纳米线具有可控直径和高纵横比，而没有从半导体纳米线的尖端到其基底的显着锥形化。 该方法包括提供包括半导体悬臂的AFM探针，该半导体悬臂具有从所述半导体悬臂的表面向上延伸的半导体金字塔。 半导体金字塔有顶点。 在AFM探针上形成图案化的氧化物层。 图案化氧化物层具有暴露半导体金字塔的顶点的开口。 使用未氧化的Al种子材料作为纳米线生长的催化剂，在半导体金字塔的暴露的顶点上生长单个半导体纳米线。
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