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公开(公告)号:US06797334B2
公开(公告)日:2004-09-28
申请号:US10648393
申请日:2003-08-27
申请人: Makoto Akizuki , Mitsuaki Harada , Satoru Ogasawara , Atsumasa Doi , Isao Yamada , Jiro Matsuo
发明人: Makoto Akizuki , Mitsuaki Harada , Satoru Ogasawara , Atsumasa Doi , Isao Yamada , Jiro Matsuo
IPC分类号: C23C1400
CPC分类号: B01J37/0215 , B01J37/347 , C07F17/00 , C08F4/65912 , C08F4/65916 , C08F10/02 , C23C14/0031 , C23C14/08 , C23C14/088 , C23C16/405 , C23C16/409 , C23C16/4482 , C23C16/513 , H01J2237/0812 , C08F4/6592
摘要: In order to deopsit a high-grade and extra-thin film without causing damage to the substrate at a relatively low temperature, the present invention provides a method for forming a cluster which is a lumpy group of atoms or molecules of a reactive substance at the room temperature under the atmospheric pressure, irradiating electrons onto clusters, irradiating the resulting cluster ions onto a substrate surface by accelerating by an acceleration voltage, and at the same time or alternately, irradiating one or more component gases of the deposit film onto the substrate surface, thereby depositing a thin film on the substrate surface through reaction.
摘要翻译: 为了在较低的温度下对高品位和超薄的膜进行脱模而不会对基材造成损害,本发明提供了一种形成簇的方法,该簇是一组反应物质的原子或分子, 在大气压下的室温下照射电子到簇上,通过加速电压加速照射所得到的簇离子到衬底表面,同时或者交替地将沉积膜的一种或多种组分气体照射到衬底表面上 从而通过反应在衬底表面上沉积薄膜。
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公开(公告)号:US06797339B2
公开(公告)日:2004-09-28
申请号:US10351555
申请日:2003-01-27
申请人: Makoto Akizuki , Mitsuaki Harada , Atsumasa Doi , Isao Yamada
发明人: Makoto Akizuki , Mitsuaki Harada , Atsumasa Doi , Isao Yamada
IPC分类号: C23C1408
CPC分类号: C23C8/36 , C23C14/48 , H01J2237/0812 , H01L21/02238 , H01L21/31662 , H01L21/32105
摘要: A method of forming a thin film on the surface of a substrate such as silicon, in which a gas cluster (which is a massive atomic or molecular group of a reactive substance taking the gaseous form at room temperature under atmospheric pressure) is formed and then ionized, and the cluster ions are then irradiated onto a substrate surface under an acceleration voltage to cause a reaction. It is possible to form a high quality ultra-thin film having a very smooth interface, without causing any damage to the substrate, even at room temperature.
摘要翻译: 在诸如硅的基板的表面上形成薄膜的方法,其中形成气体簇(其是在大气压下在室温下呈气态形式的反应物质的大量原子或分子基团),然后 电离,然后在加速电压下将簇离子照射到基板表面上以引起反应。即使在基板表面上也可以形成具有非常光滑的界面的高质量超薄膜,而不会对基板造成任何损坏 室内温度。
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