Method for forming thin film with a gas cluster ion beam
    2.
    发明授权
    Method for forming thin film with a gas cluster ion beam 失效
    用气体簇离子束形成薄膜的方法

    公开(公告)号:US06797339B2

    公开(公告)日:2004-09-28

    申请号:US10351555

    申请日:2003-01-27

    IPC分类号: C23C1408

    摘要: A method of forming a thin film on the surface of a substrate such as silicon, in which a gas cluster (which is a massive atomic or molecular group of a reactive substance taking the gaseous form at room temperature under atmospheric pressure) is formed and then ionized, and the cluster ions are then irradiated onto a substrate surface under an acceleration voltage to cause a reaction. It is possible to form a high quality ultra-thin film having a very smooth interface, without causing any damage to the substrate, even at room temperature.

    摘要翻译: 在诸如硅的基板的表面上形成薄膜的方法,其中形成气体簇(其是在大气压下在室温下呈气态形式的反应物质的大量原子或分子基团),然后 电离,然后在加速电压下将簇离子照射到基板表面上以引起反应。即使在基板表面上也可以形成具有非常光滑的界面的高质量超薄膜,而不会对基板造成任何损坏 室内温度。