公开(公告)号：US06797334B2

公开(公告)日：2004-09-28

申请号：US10648393

申请日：2003-08-27

申请人： Makoto Akizuki ,  Mitsuaki Harada ,  Satoru Ogasawara ,  Atsumasa Doi ,  Isao Yamada ,  Jiro Matsuo

发明人： Makoto Akizuki ,  Mitsuaki Harada ,  Satoru Ogasawara ,  Atsumasa Doi ,  Isao Yamada ,  Jiro Matsuo

IPC分类号： C23C1400

CPC分类号： B01J37/0215 ,  B01J37/347 ,  C07F17/00 ,  C08F4/65912 ,  C08F4/65916 ,  C08F10/02 ,  C23C14/0031 ,  C23C14/08 ,  C23C14/088 ,  C23C16/405 ,  C23C16/409 ,  C23C16/4482 ,  C23C16/513 ,  H01J2237/0812 ,  C08F4/6592

摘要： In order to deopsit a high-grade and extra-thin film without causing damage to the substrate at a relatively low temperature, the present invention provides a method for forming a cluster which is a lumpy group of atoms or molecules of a reactive substance at the room temperature under the atmospheric pressure, irradiating electrons onto clusters, irradiating the resulting cluster ions onto a substrate surface by accelerating by an acceleration voltage, and at the same time or alternately, irradiating one or more component gases of the deposit film onto the substrate surface, thereby depositing a thin film on the substrate surface through reaction.

摘要翻译： 为了在较低的温度下对高品位和超薄的膜进行脱模而不会对基材造成损害，本发明提供了一种形成簇的方法，该簇是一组反应物质的原子或分子， 在大气压下的室温下照射电子到簇上，通过加速电压加速照射所得到的簇离子到衬底表面，同时或者交替地将沉积膜的一种或多种组分气体照射到衬底表面上 从而通过反应在衬底表面上沉积薄膜。

公开(公告)号：US07022545B2

公开(公告)日：2006-04-04

申请号：US10502537

申请日：2003-01-10

申请人： Isao Yamada ,  Jiro Matsuo ,  Noriaki Toyoda ,  Kazutoshi Murata ,  Naomasa Miyatake

发明人： Isao Yamada ,  Jiro Matsuo ,  Noriaki Toyoda ,  Kazutoshi Murata ,  Naomasa Miyatake

IPC分类号： H01L21/02 ,  H01L21/205 ,  B24C1/00 ,  C30B29/36

CPC分类号： C30B29/36 ,  C23C16/01 ,  C23C16/325 ,  C30B25/02 ,  C30B33/00 ,  Y10S438/931

摘要： The present invention has its object to obtain an SiC monitor wafer which can flatten the surface until particle detection is possible. SiC of a crystal system 3C is deposited on a substrate by a CVD (Chemical Vapor Deposition) method, and the SiC is detached from a substrate. After the SiC surface is flattened by using mechanical polishing alone or in combination with CMP (Chemo Mechanical Polishing), GCIB (Gas Cluster Ion Beam) is irradiated to the surface until the surface roughness becomes Ra=0.5 nm or less and the impurity density of the wafer surface becomes 1*1011 atoms/cm2 or less to produce the SiC monitor wafer.

摘要翻译： 本发明的目的是获得可以使表面变平的SiC监测晶片，直到可以进行粒子检测。 通过CVD（化学气相沉积）法将晶体系统3C的SiC沉积在衬底上，并且将SiC从衬底上分离。 在通过单独使用机械抛光或与CMP（Chemo Mechanical Polishing）组合使SiC表面平坦化之后，将GCIB（气体簇离子束）照射到表面，直到表面粗糙度变为Ra = 0.5nm以下，杂质浓度 晶片表面变为1×10 11原子/ cm 2或更小，以产生SiC监测晶片。

公开(公告)号：US6013332A

公开(公告)日：2000-01-11

申请号：US762853

申请日：1996-12-06

申请人： Kenichi Goto ,  Masataka Kase ,  Jiro Matsuo ,  Isao Yamada ,  Daisuke Takeuchi ,  Noriaki Toyoda ,  Norihiro Shimada

发明人： Kenichi Goto ,  Masataka Kase ,  Jiro Matsuo ,  Isao Yamada ,  Daisuke Takeuchi ,  Noriaki Toyoda ,  Norihiro Shimada

IPC分类号： C23C14/48 ,  H01L21/265 ,  C23C14/14

CPC分类号： H01L21/2658 ,  C23C14/48 ,  H01L21/26513 ,  H01J2237/31701 ,  Y10S438/918

摘要： A method of manufacturing a semiconductor device comprising the steps of: ionizing decaborane; and implanting ionized decaborane into a silicon wafer. Solid decaborane can be vaporized in a reduced pressure atmosphere or by heating. A single decaborane molecule can provide 10 boron atoms while the acceleration energy per each boron atom can be reduced to about 1/10 of the acceleration energy for a decaborane molecule.

摘要翻译： 一种制造半导体器件的方法，包括以下步骤：电离十硼烷; 并将离子化的十硼烷注入到硅晶片中。 固体十硼烷可在减压气氛或加热下汽化。 单个十硼烷分子可以提供10个硼原子，而每个硼原子的加速能量可以降低到十五硼烷分子的加速能的约+ E，fra 1/10 + EE。

公开(公告)号：US20050042800A1

公开(公告)日：2005-02-24

申请号：US10502537

申请日：2003-01-10

申请人： Isao Yamada ,  Jiro Matsuo ,  Noriaki Toyoda ,  Kazutoshi Murata ,  Naomasa Miyatake

发明人： Isao Yamada ,  Jiro Matsuo ,  Noriaki Toyoda ,  Kazutoshi Murata ,  Naomasa Miyatake

IPC分类号： C23C16/01 ,  C23C16/32 ,  C30B25/02 ,  C30B29/36 ,  C30B33/00 ,  C30B33/12 ,  H01L21/02 ,  H01L21/205 ,  H01L21/00 ,  H01L21/30 ,  H01L21/46

CPC分类号： C30B29/36 ,  C23C16/01 ,  C23C16/325 ,  C30B25/02 ,  C30B33/00 ,  Y10S438/931

摘要： The present invention has its object to obtain an SiC monitor wafer which can flatten the surface until particle detection is possible. SiC of a crystal system 3C is deposited on a substrate by a CVD (Chemical Vapor Deposition) method, and the SiC is detached from a substrate. After the SiC surface is flattened by using mechanical polishing alone or in combination with CMP (Chemo Mechanical Polishing), GCIB (Gas Cluster Ion Beam) is irradiated to the surface until the surface roughness becomes Ra=0.5 nm or less and the impurity density of the wafer surface becomes 1*1011 atoms/cm2 or less to produce the SiC monitor wafer.

摘要翻译： 本发明的目的是获得可以使表面变平的SiC监测晶片，直到可以进行粒子检测。 通过CVD（化学气相沉积）法将晶体系统3C的SiC沉积在衬底上，并且将SiC从衬底上分离。 在通过单独使用机械抛光或与CMP（Chemo Mechanical Polishing）组合使SiC表面平坦化之后，将GCIB（气体簇离子束）照射到表面，直到表面粗糙度变为Ra = 0.5nm以下，杂质浓度 晶片表面变为1×1011原子/ cm 2或更小以产生SiC监测晶片。

公开(公告)号：US06486068B2

公开(公告)日：2002-11-26

申请号：US09004608

申请日：1998-01-08

申请人： Shiro Yamasaki ,  Seiji Nagai ,  Masayoshi Koike ,  Isamu Akasaki ,  Hiroshi Amano ,  Isao Yamada ,  Jiro Matsuo

发明人： Shiro Yamasaki ,  Seiji Nagai ,  Masayoshi Koike ,  Isamu Akasaki ,  Hiroshi Amano ,  Isao Yamada ,  Jiro Matsuo

IPC分类号： H01L21302

CPC分类号： H01S5/0201 ,  H01S5/0203 ,  H01S5/32341

摘要： A method for manufacturing a laser diode using Group III nitride compound semiconductor comprising a buffer layer 2, an n+ layer 3, a cladding layer 4, an active layer 5, a p-type cladding layer 61, a contact layer 62, an SiO2 layer 9, an electrode 7 which is formed on the window formed in a portion of the SiO2 layer 9, and an electrode 8 which is formed on a portion of the n+ layer 3 by etching a portion of 4 layers from the contact layer 62 down to the cladding layer 4. One pair of opposite facets S of a cavity is formed by RIBE, and then the facets are etched by gas cluster ion beam etching using Ar gas. As a result, the facets S are flatted and the mirror reflection of the facets S is improved.

摘要翻译： 一种使用III族氮化物化合物半导体制造激光二极管的方法，包括缓冲层2，n +层3，包覆层4，有源层5，p型覆层61，接触层62，SiO 2层 如图9所示，形成在形成在SiO 2层9的一部分上的窗口上的电极7和通过从接触层62蚀刻4层的一部分而形成在n +层3的一部分上的电极8， 通过RIBE形成空腔的一对相对面S，然后通过使用Ar气体的气体簇离子束蚀刻蚀刻该刻面。 结果，小面S变平，并且小面S的镜面反射得到改善。

公开(公告)号：US06416820B1

公开(公告)日：2002-07-09

申请号：US09443995

申请日：1999-11-19

申请人： Isao Yamada ,  Jiro Matsuo ,  Teruyuki Kitagawa ,  Allen Kirkpatrick

发明人： Isao Yamada ,  Jiro Matsuo ,  Teruyuki Kitagawa ,  Allen Kirkpatrick

IPC分类号： C23C1406

CPC分类号： C23C14/5833 ,  B82Y30/00 ,  C23C14/0605 ,  C23C14/58 ,  H01J2237/0812 ,  Y10T428/30

摘要： A method for enabling the formation of a carbonaceous hard film having a high hardness, strong adherence to the substrate, a wide range of substrate compatibility, and structural stability, which can be formed at room temperature and may cover a large area. The method includes vapor depositing a hard film of a carbonaceous material onto a substrate under vacuum by depositing a vaporized, hydrogen free carbonaceous material, which may be ionized or non-ionized, onto the substrate surface while irradiating the carbonaceous material with gas cluster ions, generated by ionizing gas clusters to form the film.

摘要翻译： 能够形成具有高硬度，对基板的强粘附性，宽范围的基板相容性和结构稳定性的碳质硬膜的方法，其可以在室温下形成并且可以覆盖大面积。 该方法包括在真空下通过将气化的不含氢的含碳材料（其可被离子化或非离子化）沉积到基底表面上同时用气体团簇离子辐射碳质材料，将碳质材料的硬膜蒸发沉积到基底上， 通过电离气体簇形成膜。

公开(公告)号：US06641937B1

公开(公告)日：2003-11-04

申请号：US09710482

申请日：2000-11-09

申请人： Masato Kiuchi ,  Kensuke Murai ,  Shigeharu Tamura ,  Norimasa Umesaki ,  Jiro Matsuo ,  Isao Yamada

发明人： Masato Kiuchi ,  Kensuke Murai ,  Shigeharu Tamura ,  Norimasa Umesaki ,  Jiro Matsuo ,  Isao Yamada

IPC分类号： B32B1500

CPC分类号： C23C14/0676 ,  C23C14/0031 ,  C23C14/086 ,  C23C30/00 ,  G02F1/13439 ,  H01B1/08 ,  Y10T428/1055

摘要： The present invention is for a transparent conductive film of nitrogen-containing indium tin oxide 5 nm to 100 &mgr;m thick formed on a substrate. The process for producing the transparent film includes exciting the surface of the substrate in a vacuum and depositing vaporized indium tin oxide on the surface of the substrate. The surface may be excited with irradiation with an ion beam. The indium tin oxide may be deposited through vacuum deposition, laser abrasion, ion plating, ion beam deposition, or chemical vapor deposition. Vapor deposition of indium tin oxide may be performed using a sintered product of indium oxide and tin oxide or with indium metal and tin metal.

摘要翻译： 本发明是在基板上形成5nm〜100μm厚的含氮铟锡氧化物的透明导电膜。 制造透明膜的方法包括在真空中激发衬底的表面并在衬底的表面上沉积蒸发的氧化铟锡。 可以用离子束照射激发表面。 铟锡氧化物可以通过真空沉积，激光磨蚀，离子镀，离子束沉积或化学气相沉积沉积。 铟锡氧化物的气相沉积可以使用氧化铟和氧化锡的烧结产物或铟金属和锡金属进行。

公开(公告)号：US20100207041A1

公开(公告)日：2010-08-19

申请号：US12312265

申请日：2007-10-30

申请人： Akinobu Sato ,  Akiko Suzuki ,  Emmanuel Bourelle ,  Jiro Matsuo ,  Toshio Seki

发明人： Akinobu Sato ,  Akiko Suzuki ,  Emmanuel Bourelle ,  Jiro Matsuo ,  Toshio Seki

IPC分类号： H01J37/30

CPC分类号： C23F4/00 ,  H01J27/026 ,  H01J37/20 ,  H01J37/3053 ,  H01J37/317 ,  H01J2237/20207 ,  H01J2237/20214 ,  H01L21/3065

摘要： Scratches or similar surface roughness in a solid surface is reduced by gas cluster ion beam irradiation. A method of smoothing a solid surface with a gas cluster ion beam includes an irradiation step in which the solid surface is irradiated with a gas cluster ion beam, and the irradiation step includes a process of causing clusters from a plurality of directions to collide with at least an area (spot) irradiated with the gas cluster ion beam on the solid surface. Collision of the clusters from a plurality of directions with the spot is brought about by an irradiation of the gas cluster ion beam in which flight directions of the clusters diverge with respect to a center of the beam, for example.

摘要翻译： 通过气体簇离子束照射减少了固体表面中的划痕或类似的表面粗糙度。 利用气体簇离子束平滑固体表面的方法包括其中固体表面被气体团簇离子束照射的照射步骤，并且照射步骤包括使来自多个方向的团簇与 至少在固体表面上用气体团簇离子束照射的面积（斑点）。 例如，聚簇从多个方向与斑点的碰撞是通过其中簇的飞行方向相对于束的中心发散的气体团簇离子束的照射引起的。

公开(公告)号：US20060278611A1

公开(公告)日：2006-12-14

申请号：US10573942

申请日：2004-09-29

申请人： Akinobu Sato ,  Akiko Suzuki ,  Emmanuel Bourelle ,  Jiro Matsuo ,  Toshio Seki ,  Takaaki Aoki

发明人： Akinobu Sato ,  Akiko Suzuki ,  Emmanuel Bourelle ,  Jiro Matsuo ,  Toshio Seki ,  Takaaki Aoki

IPC分类号： C23F1/00 ,  C03C15/00

CPC分类号： H01J37/3244 ,  C23F4/00 ,  H01J37/08 ,  H01J37/3053 ,  H01J2237/0812 ,  H01J2237/3151

摘要： In a method of irradiating a gas cluster ion beam on a solid surface and smoothing the solid surface, the angle formed between the solid surface and the gas cluster ion beam is chosen to be between 1° and an angle less than 30°. In case the solid surface is relatively rough, the processing efficiency is raised by first irradiating a beam at an irradiation angle θ chosen to be something like 90° as a first step, and subsequently at an irradiation angle θ chosen to be 1° to less than 30° as a second step. Alternatively, the set of the aforementioned first step and second step is repeated several times.

摘要翻译： 在固体表面上照射气体团簇离子束并平滑固体表面的方法中，将固体表面和气体团簇离子束之间形成的角度选择在1°和小于30°的角度之间。 在固体表面相对粗糙的情况下，通过首先以选择为90°的照射角度θ照射光束来提高加工效率，作为第一步骤，然后以选择为1°以下的照射角度θ 超过30°作为第二步。 或者，将上述第一步骤和第二步骤的组合重复多次。

公开(公告)号：US08481981B2

公开(公告)日：2013-07-09

申请号：US12312203

申请日：2007-10-30

申请人： Akiko Suzuki ,  Akinobu Sato ,  Emmanuel Bourelle ,  Jiro Matsuo ,  Toshio Seki

发明人： Akiko Suzuki ,  Akinobu Sato ,  Emmanuel Bourelle ,  Jiro Matsuo ,  Toshio Seki

IPC分类号： G21K5/04

CPC分类号： H01L21/3065 ,  H01J2237/0812 ,  H01J2237/202 ,  H01J2237/3151

摘要： Surface roughness having intervals of several tens of nanometers to about a hundred micrometers in a solid surface is reduced by directing a gas cluster ion beam to the surface. An angle formed between the normal to the solid surface and the gas cluster ion beam is referred to as an irradiation angle, and an irradiation angle at which the distance of interaction between the solid and the cluster colliding with the solid dramatically increases is referred to as a critical angle. A solid surface smoothing method includes an irradiation step of directing the gas cluster ion beam onto the solid surface at an irradiation angle not smaller than the critical angle. The critical angle is 70°.

摘要翻译： 通过将气体团簇离子束引导到表面，在固体表面中具有数十纳米至约百微米间隔的表面粗糙度被减小。 被称为固体表面和气体团簇离子束的法线之间的角度被称为照射角度，并且固体和团簇与固体之间的相互作用距离急剧增加的照射角度被称为 一个临界角。 固体表面平滑化方法包括将气体团簇离子束以不小于临界角的照射角度引导到固体表面的照射步骤。 临界角为70°。