公开(公告)号：US20200052134A1

公开(公告)日：2020-02-13

申请号：US16659478

申请日：2019-10-21

Applicant: Micron Technology, Inc.

Inventor： Fei Wang ,  Kunal Shrotri ,  Jeffery B. Hull ,  Anish A. Khandekar ,  Duo Mao ,  Zhixin Xu ,  Ee Ee Eng ,  Jie Li ,  Dong Liang

IPC: H01L29/792 ,  G11C16/04 ,  G11C16/08 ,  H01L27/1157 ,  H01L29/66 ,  H01L21/28

Abstract: A method of forming Si3Nx, where “x” is less than 4 and at least 3, comprises decomposing a Si-comprising precursor molecule into at least two decomposition species that are different from one another, at least one of the at least two different decomposition species comprising Si. An outer substrate surface is contacted with the at least two decomposition species. At least one of the decomposition species that comprises Si attaches to the outer substrate surface to comprise an attached species. The attached species is contacted with a N-comprising precursor that reacts with the attached species to form a reaction product comprising Si3Nx, where “x” is less than 4 and at least 3. Other embodiments are disclosed, including constructions made in accordance with method embodiments of the invention and constructions independent of method of manufacture.

公开(公告)号：US20190326445A1

公开(公告)日：2019-10-24

申请号：US15957594

申请日：2018-04-19

Applicant: Micron Technology, Inc.

Inventor： Fei Wang ,  Kunal Shrotri ,  Jeffery B. Hull ,  Anish A. Khandekar ,  Duo Mao ,  Zhixin Xu ,  Ee Ee Eng ,  Jie Li ,  Dong Liang

IPC: H01L29/792 ,  H01L29/66 ,  H01L27/1157 ,  G11C16/04 ,  G11C16/08 ,  H01L21/28

Abstract: A method of forming Si3Nx, where “x” is less than 4 and at least 3, comprises decomposing a Si-comprising precursor molecule into at least two decomposition species that are different from one another, at least one of the at least two different decomposition species comprising Si. An outer substrate surface is contacted with the at least two decomposition species. At least one of the decomposition species that comprises Si attaches to the outer substrate surface to comprise an attached species. The attached species is contacted with a N-comprising precursor that reacts with the attached species to form a reaction product comprising Si3Nx, where “x” is less than 4 and at least 3. Other embodiments are disclosed, including constructions made in accordance with method embodiments of the invention and constructions independent of method of manufacture.

公开(公告)号：US10749041B2

公开(公告)日：2020-08-18

申请号：US16659478

申请日：2019-10-21

Applicant: Micron Technology, Inc.

Inventor： Fei Wang ,  Kunal Shrotri ,  Jeffery B. Hull ,  Anish A. Khandekar ,  Duo Mao ,  Zhixin Xu ,  Ee Ee Eng ,  Jie Li ,  Dong Liang

IPC: H01L29/792 ,  H01L27/1157 ,  H01L29/66 ,  H01L21/28 ,  G11C16/04 ,  G11C16/08

Abstract: A method of forming Si3Nx, where “x” is less than 4 and at least 3, comprises decomposing a Si-comprising precursor molecule into at least two decomposition species that are different from one another, at least one of the at least two different decomposition species comprising Si. An outer substrate surface is contacted with the at least two decomposition species. At least one of the decomposition species that comprises Si attaches to the outer substrate surface to comprise an attached species. The attached species is contacted with a N-comprising precursor that reacts with the attached species to form a reaction product comprising Si3Nx, where “x” is less than 4 and at least 3. Other embodiments are disclosed, including constructions made in accordance with method embodiments of the invention and constructions independent of method of manufacture.

公开(公告)号：US10483407B2

公开(公告)日：2019-11-19

申请号：US15957594

申请日：2018-04-19

Applicant: Micron Technology, Inc.

Inventor： Fei Wang ,  Kunal Shrotri ,  Jeffery B. Hull ,  Anish A. Khandekar ,  Duo Mao ,  Zhixin Xu ,  Ee Ee Eng ,  Jie Li ,  Dong Liang

IPC: H01L21/28 ,  H01L27/1157 ,  H01L29/66 ,  G11C16/04 ,  G11C16/08 ,  H01L29/792

Abstract: A method of forming Si3Nx, where “x” is less than 4 and at least 3, comprises decomposing a Si-comprising precursor molecule into at least two decomposition species that are different from one another, at least one of the at least two different decomposition species comprising Si. An outer substrate surface is contacted with the at least two decomposition species. At least one of the decomposition species that comprises Si attaches to the outer substrate surface to comprise an attached species. The attached species is contacted with a N-comprising precursor that reacts with the attached species to form a reaction product comprising Si3Nx, where “x” is less than 4 and at least 3. Other embodiments are disclosed, including constructions made in accordance with method embodiments of the invention and constructions independent of method of manufacture.