公开(公告)号：US20220238684A1

公开(公告)日：2022-07-28

申请号：US17158918

申请日：2021-01-26

Applicant: Micron Technology, Inc.

Inventor： Michael A. Lindemann ,  Collin Howder ,  Yoshiaki Fukuzumi ,  Richard J. Hill

IPC: H01L29/45 ,  H01L27/1157 ,  H01L27/11582 ,  H01L29/792 ,  H01L21/28 ,  H01L29/417

Abstract: Electronic devices comprising a doped dielectric material adjacent to a source contact, tiers of alternating conductive materials and dielectric materials adjacent to the doped dielectric material, and pillars extending through the tiers, the doped dielectric material, and the source contact and into the source stack. Related methods and electronic systems are also disclosed.

公开(公告)号：US20240162325A1

公开(公告)日：2024-05-16

申请号：US18421820

申请日：2024-01-24

Applicant: Micron Technology, Inc.

Inventor： Michael A. Lindemann ,  Collin Howder ,  Yoshiaki Fukuzumi ,  Richard J. Hill

IPC: H01L29/45 ,  H01L21/28 ,  H01L29/417 ,  H01L29/792 ,  H10B43/27 ,  H10B43/35

CPC classification number: H01L29/458 ,  H01L29/40117 ,  H01L29/41725 ,  H01L29/792 ,  H10B43/27 ,  H10B43/35

Abstract: Electronic devices comprising a doped dielectric material adjacent to a source contact, tiers of alternating conductive materials and dielectric materials adjacent to the doped dielectric material, and pillars extending through the tiers, the doped dielectric material, and the source contact and into the source stack. Related methods and electronic systems are also disclosed.

公开(公告)号：US11948992B2

公开(公告)日：2024-04-02

申请号：US17158918

申请日：2021-01-26

Applicant: Micron Technology, Inc.

Inventor： Michael A. Lindemann ,  Collin Howder ,  Yoshiaki Fukuzumi ,  Richard J. Hill

IPC: H01L29/45 ,  H01L29/417 ,  H01L29/792 ,  H01L21/28 ,  H10B43/27 ,  H10B43/35

CPC classification number: H01L29/458 ,  H01L29/40117 ,  H01L29/41725 ,  H01L29/792 ,  H10B43/27 ,  H10B43/35

Abstract: Electronic devices comprising a doped dielectric material adjacent to a source contact, tiers of alternating conductive materials and dielectric materials adjacent to the doped dielectric material, and pillars extending through the tiers, the doped dielectric material, and the source contact and into the source stack. Related methods and electronic systems are also disclosed.