公开(公告)号：US20220367512A1

公开(公告)日：2022-11-17

申请号：US17869732

申请日：2022-07-20

Applicant: Micron Technology, Inc.

Inventor： S.M. Istiaque Hossain ,  Prakash Rau Mokhna Rau ,  Arun Kumar Dhayalan ,  Damir Fazil ,  Joel D. Peterson ,  Anilkumar Chandolu ,  Albert Fayrushin ,  George Matamis ,  Christopher Larsen ,  Rokibul Islam

IPC: H01L27/11582 ,  G11C5/02 ,  H01L21/768 ,  G11C16/04 ,  G11C5/06

Abstract: Some embodiments include an integrated assembly having a first deck. The first deck has first memory cell levels alternating with first insulative levels. A second deck is over the first deck. The second deck has second memory cell levels alternating with second insulative levels. A cell-material-pillar passes through the first and second decks. Memory cells are along the first and second memory cell levels and include regions of the cell-material-pillar. An intermediate level is between the first and second decks. The intermediate level includes a buffer region adjacent the cell-material-pillar. The buffer region includes a composition different from the first and second insulative materials, and different from the first and second conductive regions. Some embodiments include methods of forming integrated assemblies.

公开(公告)号：US11430809B2

公开(公告)日：2022-08-30

申请号：US16984457

申请日：2020-08-04

Applicant: Micron Technology, Inc.

Inventor： S. M. Istiaque Hossain ,  Prakash Rau Mokhna Rau ,  Arun Kumar Dhayalan ,  Damir Fazil ,  Joel D. Peterson ,  Anilkumar Chandolu ,  Albert Fayrushin ,  George Matamis ,  Christopher Larsen ,  Rokibul Islam

IPC: H01L27/11582 ,  G11C5/02 ,  H01L21/768 ,  G11C16/04 ,  G11C5/06

Abstract: Some embodiments include an integrated assembly having a first deck. The first deck has first memory cell levels alternating with first insulative levels. A second deck is over the first deck. The second deck has second memory cell levels alternating with second insulative levels. A cell-material-pillar passes through the first and second decks. Memory cells are along the first and second memory cell levels and include regions of the cell-material-pillar. An intermediate level is between the first and second decks. The intermediate level includes a buffer region adjacent the cell-material-pillar. The buffer region includes a composition different from the first and second insulative materials, and different from the first and second conductive regions. Some embodiments include methods of forming integrated assemblies.