公开(公告)号：US10084114B2

公开(公告)日：2018-09-25

申请号：US15149740

申请日：2016-05-09

Applicant: Micron Technology, Inc.

Inventor： Lifang Xu ,  Scott D. Schellhammer ,  Shan Ming Mou ,  Michael J. Bernhardt

IPC: H01L51/52 ,  H01L33/38 ,  H01L31/0216 ,  H01L31/0236 ,  H01L33/22 ,  H01L33/42 ,  H01L33/58

CPC classification number: H01L33/38 ,  H01L31/02168 ,  H01L31/0236 ,  H01L33/22 ,  H01L33/42 ,  H01L33/58 ,  H01L2933/0091 ,  Y02E10/50

Abstract: Textured optoelectronic devices and associated methods of manufacture are disclosed herein. In several embodiments, a method of manufacturing a solid state optoelectronic device can include forming a conductive transparent texturing material on a substrate. The method can further include forming a transparent conductive material on the texturing material. Upon heating the device, the texturing material causes the conductive material to grow a plurality of protuberances. The protuberances can improve current spreading and light extraction from the device.

公开(公告)号：US20230387353A1

公开(公告)日：2023-11-30

申请号：US18359795

申请日：2023-07-26

Applicant: Micron Technology, Inc.

Inventor： Lifang Xu ,  Scott D. Schellhammer ,  Shan Ming Mou ,  Michael J. Bernhardt

IPC: H01L33/38 ,  H01L31/0216 ,  H01L33/22 ,  H01L31/0236 ,  H01L33/42 ,  H01L33/58

CPC classification number: H01L33/38 ,  H01L31/02168 ,  H01L33/22 ,  H01L31/0236 ,  H01L33/42 ,  H01L33/58 ,  H01L2933/0091 ,  Y02E10/50

Abstract: Textured optoelectronic devices and associated methods of manufacture are disclosed herein. In several embodiments, a method of manufacturing a solid state optoelectronic device can include forming a conductive transparent texturing material on a substrate. The method can further include forming a transparent conductive material on the texturing material. Upon heating the device, the texturing material causes the conductive material to grow a plurality of protuberances. The protuberances can improve current spreading and light extraction from the device.

公开(公告)号：US20200335665A1

公开(公告)日：2020-10-22

申请号：US16922940

申请日：2020-07-07

Applicant: Micron Technology, Inc.

Inventor： Lifang Xu ,  Scott D. Schellhammer ,  Shan Ming Mou ,  Michael J. Bernhardt

IPC: H01L33/38 ,  H01L31/0216 ,  H01L33/22 ,  H01L31/0236 ,  H01L33/42 ,  H01L33/58

Abstract: Textured optoelectronic devices and associated methods of manufacture are disclosed herein, in several embodiments, a method of manufacturing a solid state optoelectronic device can include forming a conductive transparent texturing material on a substrate. The method can further include forming a transparent conductive material on the texturing material. Upon heating the device, the texturing material causes the conductive material to grow a plurality of protuberances. The protuberances can improve current spreading and light extraction from the device.

公开(公告)号：US10756236B2

公开(公告)日：2020-08-25

申请号：US16104857

申请日：2018-08-17

Applicant: Micron Technology, Inc.

Inventor： Lifang Xu ,  Scott D. Schellhammer ,  Shan Ming Mou ,  Michael J. Bernhardt

IPC: H01L51/52 ,  H01L33/38 ,  H01L31/0216 ,  H01L33/22 ,  H01L31/0236 ,  H01L33/42 ,  H01L33/58

Abstract: Textured optoelectronic devices and associated methods of manufacture are disclosed herein. In several embodiments, a method of manufacturing a solid state optoelectronic device can include forming a conductive transparent texturing material on a substrate. The method can further include forming a transparent conductive material on the texturing material. Upon heating the device, the texturing material causes the conductive material to grow a plurality of protuberances. The protuberances can improve current spreading and light extraction from the device.

公开(公告)号：US12283644B2

公开(公告)日：2025-04-22

申请号：US18359795

申请日：2023-07-26

Applicant: Micron Technology, Inc.

Inventor： Lifang Xu ,  Scott D. Schellhammer ,  Shan Ming Mou ,  Michael J. Bernhardt

IPC: H01L33/38 ,  H01L31/0216 ,  H01L31/0236 ,  H01L33/22 ,  H01L33/42 ,  H01L33/58

Abstract: Textured optoelectronic devices and associated methods of manufacture are disclosed herein. In several embodiments, a method of manufacturing a solid state optoelectronic device can include forming a conductive transparent texturing material on a substrate. The method can further include forming a transparent conductive material on the texturing material. Upon heating the device, the texturing material causes the conductive material to grow a plurality of protuberances. The protuberances can improve current spreading and light extraction from the device.

公开(公告)号：US11411139B2

公开(公告)日：2022-08-09

申请号：US16922940

申请日：2020-07-07

Applicant: Micron Technology, Inc.

Inventor： Lifang Xu ,  Scott D. Schellhammer ,  Shan Ming Mou ,  Michael J. Bernhardt

IPC: H01L31/0236 ,  H01L33/38 ,  H01L31/0216 ,  H01L33/22 ,  H01L33/42 ,  H01L33/58

Abstract: Textured optoelectronic devices and associated methods of manufacture are disclosed herein, in several embodiments, a method of manufacturing a solid state optoelectronic device can include forming a conductive transparent texturing material on a substrate. The method can further include forming a transparent conductive material on the texturing material. Upon heating the device, the texturing material causes the conductive material to grow a plurality of protuberances. The protuberances can improve current spreading and light extraction from the device.

公开(公告)号：US20160254412A1

公开(公告)日：2016-09-01

申请号：US15149740

申请日：2016-05-09

Applicant: Micron Technology, Inc.

Inventor： Lifang Xu ,  Scott D. Schellhammer ,  Shan Ming Mou ,  Michael J. Bernhardt

IPC: H01L33/38 ,  H01L33/58 ,  H01L33/42

CPC classification number: H01L33/38 ,  H01L31/02168 ,  H01L31/0236 ,  H01L31/02363 ,  H01L33/22 ,  H01L33/42 ,  H01L33/58 ,  H01L2933/0091 ,  Y02E10/50

Abstract: Textured optoelectronic devices and associated methods of manufacture are disclosed herein. In several embodiments, a method of manufacturing a solid state optoelectronic device can include forming a conductive transparent texturing material on a substrate. The method can further include forming a transparent conductive material on the texturing material. Upon heating the device, the texturing material causes the conductive material to grow a plurality of protuberances. The protuberances can improve current spreading and light extraction from the device.

公开(公告)号：US11742458B2

公开(公告)日：2023-08-29

申请号：US17855593

申请日：2022-06-30

Applicant: Micron Technology, Inc.

Inventor： Lifang Xu ,  Scott D. Schellhammer ,  Shan Ming Mou ,  Michael J. Bernhardt

IPC: H01L33/22 ,  H01L33/38 ,  H01L31/0216 ,  H01L31/0236 ,  H01L33/42 ,  H01L33/58

CPC classification number: H01L33/38 ,  H01L31/0236 ,  H01L31/02168 ,  H01L33/22 ,  H01L33/42 ,  H01L33/58 ,  H01L2933/0091 ,  Y02E10/50

Abstract: Textured optoelectronic devices and associated methods of manufacture are disclosed herein. In several embodiments, a method of manufacturing a solid state optoelectronic device can include forming a conductive transparent texturing material on a substrate. The method can further include forming a transparent conductive material on the texturing material. Upon heating the device, the texturing material causes the conductive material to grow a plurality of protuberances. The protuberances can improve current spreading and light extraction from the device.

公开(公告)号：US20220336705A1

公开(公告)日：2022-10-20

申请号：US17855593

申请日：2022-06-30

Applicant: Micron Technology, Inc.

Inventor： Lifang Xu ,  Scott D. Schellhammer ,  Shan Ming Mou ,  Michael J. Bernhardt

IPC: H01L33/38 ,  H01L31/0216 ,  H01L33/22 ,  H01L31/0236 ,  H01L33/42 ,  H01L33/58

Abstract: Textured optoelectronic devices and associated methods of manufacture are disclosed herein. In several embodiments, a method of manufacturing a solid state optoelectronic device can include forming a conductive transparent texturing material on a substrate. The method can further include forming a transparent conductive material on the texturing material. Upon heating the device, the texturing material causes the conductive material to grow a plurality of protuberances. The protuberances can improve current spreading and light extraction from the device.

公开(公告)号：US20180374993A1

公开(公告)日：2018-12-27

申请号：US16104857

申请日：2018-08-17

Applicant: Micron Technology, Inc.

Inventor： Lifang Xu ,  Scott D. Schellhammer ,  Shan Ming Mou ,  Michael J. Bernhardt

IPC: H01L33/38 ,  H01L33/58 ,  H01L33/42 ,  H01L31/0216 ,  H01L33/22 ,  H01L31/0236

Abstract: Textured optoelectronic devices and associated methods of manufacture are disclosed herein. In several embodiments, a method of manufacturing a solid state optoelectronic device can include forming a conductive transparent texturing material on a substrate. The method can further include forming a transparent conductive material on the texturing material. Upon heating the device, the texturing material causes the conductive material to grow a plurality of protuberances. The protuberances can improve current spreading and light extraction from the device.