公开(公告)号：US10977186B2

公开(公告)日：2021-04-13

申请号：US15819941

申请日：2017-11-21

Applicant: Micron Technology, Inc.

Inventor： Dheeraj Srinivasan ,  Ali Mohammadzadeh ,  Michael G. Miller ,  Xiaoxiao Zhang ,  Jung Sheng Hoei

IPC: G06F12/02 ,  G06F3/06 ,  G06F12/1009 ,  G11C11/56 ,  G06F11/07

Abstract: An example method of the present disclosure includes, responsive to a loss of last written page information by a memory system, initiating a last written page search to determine last written page information of a memory device, where the last written page search is initiated via a command from a controller of the memory system to the memory device, responsive to receiving the command, performing the last written page search on the memory device, and providing the last written page information to the controller.

公开(公告)号：US20240170069A1

公开(公告)日：2024-05-23

申请号：US18388930

申请日：2023-11-13

Applicant: Micron Technology, Inc.

Inventor： Hojung Yun ,  Xiaoxiao Zhang ,  Yizhou Zhu ,  Dheeraj Srinivasan

IPC: G11C16/10 ,  G06F9/445

CPC classification number: G11C16/10 ,  G06F9/44521

Abstract: A request to execute a programming operation to program a set of memory cells of the memory array is identified, where the programming operation comprises a set of prologue sub-operations and a set of program sub-operations. A loading process is caused to be executed to load data associated with the programming operation to the memory device. During the loading process, at least a portion of the prologue sub-operations associated with the programming operation are caused to be executed. Following completion of the loading process, the set of program sub-operations of the programming operation are caused to be executed.

公开(公告)号：US20190155744A1

公开(公告)日：2019-05-23

申请号：US15819941

申请日：2017-11-21

Applicant: Micron Technology, Inc.

Inventor： Dheeraj Srinivasan ,  Ali Mohammadzadeh ,  Michael G. Miller ,  Xiaoxiao Zhang ,  Jung Sheng Hoei

IPC: G06F12/1009

Abstract: An example method of the present disclosure includes, responsive to a loss of last written page information by a memory system, initiating a last written page search to determine last written page information of a memory device, where the last written page search is initiated via a command from a controller of the memory system to the memory device, responsive to receiving the command, performing the last written page search on the memory device, and providing the last written page information to the controller.

公开(公告)号：US20210232508A1

公开(公告)日：2021-07-29

申请号：US17227473

申请日：2021-04-12

Applicant: Micron Technology, Inc.

Inventor： Dheeraj Srinivasan ,  Ali Mohammadzadeh ,  Michael G. Miller ,  Xiaoxiao Zhang ,  Jung Sheng Hoei

IPC: G06F12/1009 ,  G11C11/56 ,  G06F11/07 ,  G06F3/06 ,  G06F12/02

Abstract: An example method of the present disclosure includes, responsive to a loss of last written page information by a memory system, initiating a last written page search to determine last written page information of a memory device, where the last written page search is initiated via a command from a controller of the memory system to the memory device, responsive to receiving the command, performing the last written page search on the memory device, and providing the last written page information to the controller.