公开(公告)号：US20250031485A1

公开(公告)日：2025-01-23

申请号：US18774285

申请日：2024-07-16

Applicant: NICHIA CORPORATION

Inventor： Yoshiki MATSUSHITA

IPC: H01L33/00

Abstract: A method for manufacturing a light-emitting device includes preparing a wafer in which multiple semiconductor parts are arranged on a first surface of a first substrate, disposing a resin member covering the first surface and the multiple semiconductor parts, disposing a second substrate on the resin member, removing the first substrate, forming a dielectric layer continuously covering upper surfaces of the multiple semiconductor parts and an upper surface of the resin member, causing an upper surface of the dielectric layer to approach flat, selectively removing the dielectric layer located on the upper surface of the resin member, and directly bonding a wavelength conversion member to the upper surface of the dielectric layer.

公开(公告)号：US20240413265A1

公开(公告)日：2024-12-12

申请号：US18737239

申请日：2024-06-07

Applicant: NICHIA CORPORATION

Inventor： Yoshiki MATSUSHITA

IPC: H01L33/00

Abstract: A method for manufacturing a light-emitting device includes providing a layered body including a wavelength conversion layer, a light-transmissive layer disposed above the wavelength conversion layer, and a semiconductor layer disposed above the light-transmissive layer, separating the semiconductor layer into a plurality of semiconductor portions above the wavelength conversion layer by removing a part of the semiconductor layer; and singulating the layered body into a plurality of light-emitting devices by cleaving the wavelength conversion layer along a portion where the part of the semiconductor layer is removed.

公开(公告)号：US20230343892A1

公开(公告)日：2023-10-26

申请号：US18343078

申请日：2023-06-28

Applicant: NICHIA CORPORATION

Inventor： Yoshiki INOUE ,  Shun KITAHAMA ,  Yoshiyuki AIHARA ,  Yoshiki MATSUSHITA ,  Keisuke HIGASHITANI

IPC: H01L33/00 ,  H01L33/50 ,  H01L33/22

CPC classification number: H01L33/0095 ,  H01L33/007 ,  H01L33/507 ,  H01L33/22 ,  H01L2933/0041

Abstract: A method for manufacturing a light-emitting element includes: forming a semiconductor structure comprising a light-emitting layer on a first surface of a substrate, wherein the first surface comprising a plurality of protrusions and a second region; dividing the semiconductor structure into a plurality of light-emitting portions by removing a portion of the semiconductor structure so as to form an exposed region of the substrate, wherein the second region is exposed from under the semiconductor structure in the exposed region; bonding a light-transmitting body to a second surface of the substrate that is opposite the first surface so as to form a bonded body, wherein the light-transmitting body comprises a fluorescer; forming a plurality of modified regions along the exposed region; removing a portion of the light-transmitting body that overlaps the plurality of modified regions in a plan view; and singulating the bonded body along the modified regions.

公开(公告)号：US20210193867A1

公开(公告)日：2021-06-24

申请号：US17113583

申请日：2020-12-07

Applicant: NICHIA CORPORATION

Inventor： Yoshiki INOUE ,  Shun KITAHAMA ,  Yoshiyuki AIHARA ,  Yoshiki MATSUSHITA ,  Keisuke HIGASHITANI

IPC: H01L33/00 ,  H01L33/22 ,  H01L33/50

Abstract: A method for manufacturing a light-emitting element includes dividing a semiconductor structure into a plurality of light-emitting portions by removing a portion of the semiconductor structure so as to form an exposed region, a first surface being exposed from under the semiconductor structure in the exposed region; etching protrusions formed in the exposed region; bonding a light-transmitting body to a second surface so as to form a bonded body; forming a plurality of modified regions along the exposed region inside the substrate by irradiating a laser beam on the exposed region from the first surface side; removing a portion of the light-transmitting body that overlaps the plurality of modified regions in a plan view; and singulating the bonded body along the modified regions.