公开(公告)号：US20210257524A1

公开(公告)日：2021-08-19

申请号：US17233767

申请日：2021-04-19

申请人： NICHIA CORPORATION

发明人： Yoshiki INOUE ,  Naoto FURUHA ,  Tadaaki IKEDA

IPC分类号： H01L33/60 ,  H01L33/50 ,  H01L33/38 ,  H01L33/62 ,  H01L25/075

摘要： A method of manufacturing a light emitting element includes: providing a first light emitting part and a second light emitting part, the first light emitting part comprising a first base member and a first semiconductor layered body, the second light emitting part comprising a second base member and a second semiconductor layered body; bonding the first and second light emitting parts to each other such that the first base member and the second base member are disposed between the first semiconductor layered body and the second semiconductor layered body; disposing a light reflecting member to cover the bonded first and second light emitting parts; removing a portion of the light reflecting member to expose surfaces of the first and second base members; and disposing a wavelength conversion member on the exposed surface of the first base member and the exposed surface of the second base member.

公开(公告)号：US20170279018A1

公开(公告)日：2017-09-28

申请号：US15466780

申请日：2017-03-22

申请人： NICHIA CORPORATION

发明人： Masatsugu ICHIKAWA ,  Yoshiki INOUE ,  Yoshiyuki AIHARA ,  Takehito SHIMATSU

IPC分类号： H01L33/62 ,  H01L27/15

CPC分类号： H01L33/62 ,  H01L25/0753 ,  H01L27/153 ,  H01L33/0079 ,  H01L33/44 ,  H01L2224/16225 ,  H01L2224/8192 ,  H01L2224/97 ,  H01L2933/0025 ,  H01L2933/0033 ,  H01L2933/0066

摘要： A method for manufacturing a semiconductor device includes: providing a support with a semiconductor light-emitting element including a first electrode and a second electrode; providing a base including a first interconnect terminal and a second interconnect terminal; forming a first metal layer on the support to cover the first and the second electrodes; forming a second metal layer on the base to cover the first and the second interconnect terminals; arranging the first and second electrodes and the first and second interconnect terminals to respectively face each other, and providing electrical connection therebetween by atomic diffusion; and rendering electrically insulative or removing portions of the first metal layer and the second metal layer that are outside thereof defined between the first and second electrodes and the first and second interconnect terminals.

公开(公告)号：US20130285109A1

公开(公告)日：2013-10-31

申请号：US13831138

申请日：2013-03-14

申请人： NICHIA CORPORATION

发明人： Junya NARITA ,  Takuya OKADA ,  Yohei WAKAI ,  Yoshiki INOUE ,  Naoya SAKO ,  Katsuyoshi KADAN

IPC分类号： H01L33/20

CPC分类号： H01L33/22 ,  H01L21/0242 ,  H01L21/0243 ,  H01L21/02458 ,  H01L21/0254 ,  H01L33/007 ,  H01L33/10 ,  H01L33/20 ,  H01L33/32 ,  Y10T428/24 ,  Y10T428/24479

摘要： A sapphire substrate having a principal surface for growing a nitride semiconductor to form a nitride semiconductor light emitting device comprises a plurality of projections on the principal surface. Each of the projections has a bottom that has a substantially polygonal shape. Each side of the bottom of the projections has a depression in its center. Vertexes of the bottoms of the respective projections extend in a direction that is within a range of ±10 degrees of a direction that is rotated counter-clockwise by 30 degrees from a crystal axis “a” of the sapphire substrate.

摘要翻译： 具有用于生长氮化物半导体以形成氮化物半导体发光器件的主表面的蓝宝石衬底包括主表面上的多个突起。 每个突起具有基本上多边形的底部。 突起的底部的每一侧在其中心具有凹陷。 相应突起的底部的顶点在与蓝宝石基板的晶轴“a”逆时针旋转30度的方向的±10度的范围内延伸。

公开(公告)号：US20240213298A1

公开(公告)日：2024-06-27

申请号：US18536867

申请日：2023-12-12

申请人： NICHIA CORPORATION

发明人： Yoshinori FUKUI ,  Shun KITAHAMA ,  Yoshiki INOUE

IPC分类号： H01L27/15

CPC分类号： H01L27/156

摘要： A light emitting element includes: a first semiconductor layer; light emitting cells disposed on the first semiconductor layer, each including: an active layer, and a second semiconductor layer disposed on the active layer, wherein the light emitting cells include a first light emitting cell positioned in a center, and a plurality of second light emitting cells positioned around the first light emitting cell; a first insulation layer having a first opening provided above the first semiconductor layer located outward from the second light emitting cells and a plurality of second openings located above each second semiconductor layer; a first electrode disposed on the first insulation layer and electrically connected to the first semiconductor layer at the first opening; and a plurality of second electrodes, each positioned on and electrically connected to a respective one of the second semiconductor layers at a respective one of the second openings.

公开(公告)号：US20180351043A1

公开(公告)日：2018-12-06

申请号：US16100104

申请日：2018-08-09

申请人： Nichia Corporation

发明人： Keiji EMURA ,  Yoshiki INOUE ,  Hiroaki KAGEYAMA

IPC分类号： H01L33/38

CPC分类号： H01L33/382 ,  H01L33/387 ,  H01L33/504

摘要： Provided are a light emitting element and a light emitting device with improved light emission intensity distribution. A light emitting element includes a light-transmissive substrate, an n-type semiconductor layer, a first p-type semiconductor layer, a first p-side electrode, a first n-side electrode, a second p-type semiconductor layer, a second p-side electrode, and a second n-side electrode. A light emitting device includes the light emitting element, and an external connection electrode provided at the light emitting element on a side opposite to the light-transmissive substrate. The external connection electrode includes an n-side external connection electrode connected to the first n-side electrode and the second n-side electrode, a first p-side external connection electrode connected to the first p-side electrode, and a second p-side external connection electrode connected to the second p-side electrode.

公开(公告)号：US20160300982A1

公开(公告)日：2016-10-13

申请号：US15095937

申请日：2016-04-11

申请人： NICHIA CORPORATION

发明人： Naoya SAKO ,  Takashi OHARA ,  Yoshiki INOUE ,  Yuki SHIBUTANI ,  Yoshihito KAWAUCHI ,  Kazuyuki TAKEICHI ,  Yasunori NAGAHAMA

IPC分类号： H01L33/22 ,  H01L33/00 ,  C30B29/40 ,  C30B33/10 ,  C30B33/12 ,  C30B25/18 ,  H01L33/32 ,  C30B29/20

CPC分类号： H01L33/22 ,  C30B25/183 ,  C30B25/186 ,  C30B29/20 ,  C30B29/403 ,  C30B29/406 ,  C30B33/08 ,  C30B33/10 ,  C30B33/12 ,  H01L21/02002 ,  H01L21/308 ,  H01L33/007 ,  H01L33/24 ,  H01L33/32 ,  H01L2933/0091

摘要： A sapphire substrate provided with a plurality of projections on a principal surface on which a nitride semiconductor is grown to form a nitride semiconductor light emitting element. The projections have a substantially triangular pyramidal-shape the projections having a plurality of side surfaces and a pointed top. The side surfaces have an inclination angle of between 53° and 59° from a bottom of the projections. The side surfaces are crystal-growth-suppressed surfaces on which a growth of the nitride semiconductor is suppressed relative to a portion of the principal surface located between adjacent projections. A bottom of the projections has a substantially triangular shape having three outwardly curved arc-shaped sides, and each of the side surfaces has a substantially triangular shape having vertexes located at the top of the projection and at both ends of a respective side of the bottom of the projection.

摘要翻译： 蓝宝石衬底，其在其上生长氮化物半导体的主表面上设置有多个突起，以形成氮化物半导体发光元件。 突起具有基本上三角锥形的突起，其具有多个侧表面和尖顶。 侧表面与凸起的底部之间具有53°和59°之间的倾斜角度。 侧表面是相对于位于相邻突起之间的主表面的一部分抑制氮化物半导体生长的晶体生长抑制表面。 突起的底部具有三个具有三个向外弯曲的弧形侧面的三角形形状，并且每个侧表面具有基本上三角形的形状，其顶点位于突出部的顶部并且在底部的相应侧的两端 的投影。

公开(公告)号：US20170186915A1

公开(公告)日：2017-06-29

申请号：US15388507

申请日：2016-12-22

申请人： NICHIA CORPORATION

发明人： Keiji EMURA ,  Yoshiki INOUE ,  Takamasa SUNDA

IPC分类号： H01L33/40 ,  H01L33/62 ,  H01L33/46 ,  H01L27/15

CPC分类号： H01L33/405 ,  H01L27/156 ,  H01L33/382 ,  H01L33/44 ,  H01L33/46 ,  H01L33/62

摘要： A light emitting element includes a substrate; a plurality of semiconductor light emitting cells; a plurality of light reflective electrodes; a first insulation layer that continuously covers lateral surfaces of the semiconductor light emitting cells, spaces between the semiconductor light emitting cells, lateral surfaces of the light reflective electrodes, and a portion of upper surfaces of the light reflective electrodes; a plurality of wiring electrodes, and cover the lateral surfaces of the semiconductor light emitting cells and the spaces between the semiconductor light emitting cells via the first insulation layer; and a light reflective metal layer that covers the lateral surfaces of at least two adjacent ones of the semiconductor light emitting cells and the space between said at least two semiconductor light emitting cells, via the first insulation layer.

公开(公告)号：US20170084787A1

公开(公告)日：2017-03-23

申请号：US15267691

申请日：2016-09-16

申请人： NICHIA CORPORATION

发明人： Keiji EMURA ,  Yoshiki INOUE ,  Hiroaki KAGEYAMA

IPC分类号： H01L33/38 ,  H01L33/40 ,  H01L33/58 ,  H01L33/62 ,  H01L33/50 ,  H01L27/15 ,  H01L33/24

CPC分类号： H01L33/387 ,  H01L33/20 ,  H01L33/38 ,  H01L33/382 ,  H01L33/62

摘要： A light-emitting element includes a light transmissive substrate; a first semiconductor stacked body including: a first n-side semiconductor layer, and a first p-side semiconductor layer, the first p-side semiconductor layer having a hole formed therein; a first p-electrode; a first n-electrode having a portion above the first p-electrode, and a portion extending into the hole, the first n-electrode being electrically connected to the first n-side semiconductor layer through the hole; a second semiconductor stacked body including: a second n-side semiconductor layer located around a periphery of the first semiconductor stacked body, and a second p-side semiconductor layer located above the second n-side semiconductor layer and located outside of an inner edge portion of the second n-side semiconductor layer; a second p-electrode; and a second n-electrode having a portion above the second p-electrode, and being electrically connected to the inner edge portion of the second n-side semiconductor layer.

公开(公告)号：US20130270593A1

公开(公告)日：2013-10-17

申请号：US13831211

申请日：2013-03-14

申请人： NICHIA CORPORATION

发明人： Junya NARITA ,  Takuya OKADA ,  Yohei WAKAI ,  Yoshiki INOUE ,  Naoya SAKO ,  Katsuyoshi KADAN

IPC分类号： H01L33/10

CPC分类号： H01L33/22 ,  H01L21/0242 ,  H01L21/0243 ,  H01L21/02458 ,  H01L21/0254 ,  H01L33/007 ,  H01L33/10 ,  H01L33/20 ,  H01L33/32 ,  Y10T428/24 ,  Y10T428/24479

摘要： A sapphire substrate having a principal surface for growing a nitride semiconductor to form a nitride semiconductor light emitting device comprises a plurality of projections on the principal surface. Each of the projections has a bottom that has a substantially polygonal shape. Each side of the bottom of the projections has a depression in its center. Vertexes of the bottoms of the respective projections extend in a direction that is within a range of ±10 degrees of a direction that is rotated clockwise by 30 degrees from a crystal axis “a” of the sapphire substrate.

摘要翻译： 具有用于生长氮化物半导体以形成氮化物半导体发光器件的主表面的蓝宝石衬底包括主表面上的多个突起。 每个突起具有基本上多边形的底部。 突起的底部的每一侧在其中心具有凹陷。 各个突起的底部的顶点在与蓝宝石基板的晶轴“a”顺时针旋转30度的方向的±10度的范围内延伸。

公开(公告)号：US20240079517A1

公开(公告)日：2024-03-07

申请号：US18507177

申请日：2023-11-13

申请人： NICHIA CORPORATION

发明人： Shun KITAHAMA ,  Yoshiki INOUE ,  Kazuhiro NAGAMINE ,  Junya NARITA

IPC分类号： H01L33/00 ,  H01L33/14 ,  H01L33/32 ,  H01L33/38 ,  H01L33/44

CPC分类号： H01L33/0095 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/145 ,  H01L33/32 ,  H01L33/382 ,  H01L33/44 ,  H01L21/268

摘要： A light emitting element includes: a semiconductor structure including: a substrate, an n-side nitride semiconductor layer located on the substrate, and a p-side nitride semiconductor layer located on the n-side nitride semiconductor layer, wherein a p-side nitride semiconductor side of the semiconductor structure is a light extraction face side, and an n-side nitride semiconductor side of the semiconductor structure is a mounting face side; a first protective layer located on and in direct contact with an upper face of the p-side nitride semiconductor layer in a region corresponding to the peripheral portion of the p-side nitride semiconductor layer; and a current diffusion layer located on and in direct contact with an upper face of the p-side nitride semiconductor layer in a region corresponding to the area inside of the peripheral portion. The current diffusion layer does not overlap the first protective layer in a top view.