公开(公告)号：US20240213298A1

公开(公告)日：2024-06-27

申请号：US18536867

申请日：2023-12-12

Applicant: NICHIA CORPORATION

Inventor： Yoshinori FUKUI ,  Shun KITAHAMA ,  Yoshiki INOUE

IPC: H01L27/15

CPC classification number: H01L27/156

Abstract: A light emitting element includes: a first semiconductor layer; light emitting cells disposed on the first semiconductor layer, each including: an active layer, and a second semiconductor layer disposed on the active layer, wherein the light emitting cells include a first light emitting cell positioned in a center, and a plurality of second light emitting cells positioned around the first light emitting cell; a first insulation layer having a first opening provided above the first semiconductor layer located outward from the second light emitting cells and a plurality of second openings located above each second semiconductor layer; a first electrode disposed on the first insulation layer and electrically connected to the first semiconductor layer at the first opening; and a plurality of second electrodes, each positioned on and electrically connected to a respective one of the second semiconductor layers at a respective one of the second openings.

公开(公告)号：US20200098568A1

公开(公告)日：2020-03-26

申请号：US16580945

申请日：2019-09-24

Applicant: NICHIA CORPORATION

Inventor： Takamasa SUNDA ,  Yoshinori FUKUI ,  Shinya ASAKAWA

IPC: H01L21/288 ,  H01L23/00 ,  C25D7/12 ,  C25D5/02 ,  C25D3/38

Abstract: A method of manufacturing a semiconductor device includes forming a photoresist defining an opening on an upper surface of a semiconductor wafer; and forming an electrode in the opening using a plating technique, in which the step of forming the electrode includes forming a first plated layer at a first current density such that the first plated layer has a first thickness, and forming a second plated layer on an upper surface of the first plated layer at a second current density higher than the first current density such that the second plated layer has a second thickness greater than the first thickness.

公开(公告)号：US20190267527A1

公开(公告)日：2019-08-29

申请号：US16287545

申请日：2019-02-27

Applicant: NICHIA CORPORATION

Inventor： Keiji EMURA ,  Takao MISAKI ,  Takamasa SUNDA ,  Yoshinori FUKUI

IPC: H01L33/62 ,  H01L27/15 ,  H01L33/40 ,  H01L33/44 ,  H01L33/64

Abstract: The light emitting element includes: first and second light emitting cells each including an n-side semiconductor layer, an active layer and a p-side semiconductor layer; a first insulating film covering the first and second light emitting cells, and provided with first p-side and first n-side openings; a wiring electrode connected to the first light emitting cell at the first n-side opening, and connected to the second light emitting cell at the first p-side opening; a first electrode connected to the first light emitting cell; a second electrode connected to the second light emitting cell; a second insulating film provided with a second p-side opening formed above the first electrode, a second n-side opening formed above the second electrode, and a third opening formed above the wiring electrode; a first external connection portion connected to the first electrode; and a second external connection portion connected to the second electrode.