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公开(公告)号:US10664638B1
公开(公告)日:2020-05-26
申请号:US16221631
申请日:2018-12-17
Applicant: GLOBALFOUNDRIES INC. , NOVA MEASURING INSTRUMENTS LTD.
Inventor: Taher Kagalwala , Sridhar Mahendrakar , Matthew Sendelbach , Alok Vaid
IPC: G06F30/3323 , H01L29/78 , H01L27/11 , G06F111/20 , G06F119/18
Abstract: Measuring SRAM structures having FinFET transistors by obtaining, on a production semiconductor wafer, spectra of a SRAM production structure including FinFET fins and gates, identifying SRAM reference structure spectra corresponding to the spectra, the reference structure from measuring, on a reference semiconductor wafer, a reference structure including a layout of FinFET fins having gates, injecting, into an OCD model of the production structure, fin target parameter values, corresponding to the identified reference structure spectra, from measuring, on the reference wafer, a fin target including a layout of exposed FinFET fins lacking gates similar or identical to the reference structure layout, correspondence between the fin target parameter values and the reference structure spectra previously identified by ML, and determining measurement values for the FinFET gates of the production structure by fitting reference spectra associated with the production structure in the OCD model to the production structure spectra.
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公开(公告)号:US10302414B2
公开(公告)日:2019-05-28
申请号:US14852897
申请日:2015-09-14
Applicant: Nova Measuring Instruments Ltd. , GLOBAL FOUNDRIES
Inventor: Gilad Wainreb , Etai Littwin , Alok Vaid , Michael Klots , Cornel Bozdog , Matthew Sendelbach
Abstract: A method and system are presented for use in model-based optical measurements in patterned structures. The method comprises: selecting an optimal optical model for interpretation of optical measured data indicative of optical response of the structure under measurements. The selection of the optimal optical model comprises: creating a complete optical model with floating parameters defining multiple configurations of said complete model including one or more model configurations describing an optical response of the structure under measurements, utilizing the complete model for predicting a reference optical response from the structure and generating corresponding virtual reference data, and using the virtual reference data for selecting the optimal optical model for interpretation of the optical measured data.
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公开(公告)号:US10209206B2
公开(公告)日:2019-02-19
申请号:US14903629
申请日:2014-07-08
Applicant: NOVA MEASURING INSTRUMENTS LTD.
Inventor: Gilad Barak , Shay Wolfling , Cornel Bozdog , Matthew Sendelbach
Abstract: A control system is presented for use in measuring one or more parameters of a sample. The control system comprises an input utility and a processor utility. The input utility is configured for receiving input data including first data comprising X-ray Diffraction or High-Resolution X-ray Diffraction (XRD) response data of the sample indicative of a material distribution in the sample, and second data comprising optical response data of the sample to incident light indicative of at least a geometry of the sample. The processor utility is configured and operable for processing and analyzing one of the first and second data for optimizing the other one of the first and second data, and utilizing the optimized data for determining said one or more parameters of the sample including a strain distribution in the sample.
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公开(公告)号:US10916404B2
公开(公告)日:2021-02-09
申请号:US16488974
申请日:2018-02-27
Applicant: NOVA MEASURING INSTRUMENTS LTD.
Inventor: Vladimir Machavariani , Michael Shifrin , Daniel Kandel , Victor Kucherov , Igor Ziselman , Ronen Urenski , Matthew Sendelbach
Abstract: A control system is presented for use in measuring one or more parameters of a three-dimensional patterned structure. The control system is configured as a computer system comprising a data processor configured to receive and process raw measured TEM image data, TEMmeas, and generate output data indicative of one or more parameters of a patterned structure. The data processor comprises an optimization module configured and operable to utilize data indicative of one or more parameters of TEM measurement mode and perform a fitting procedure between the raw measured TEM image data, TEMmeas, and a predetermined simulated TEM image data, TEMsimui based on a parametrized three-dimensional model of features of the patterned structure, and generate simulated image data corresponding to a best fit condition, to thereby enable determination therefrom of the one or more parameters of the structure.
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公开(公告)号:US10222710B2
公开(公告)日:2019-03-05
申请号:US15121479
申请日:2015-02-26
Applicant: NOVA MEASURING INSTRUMENTS LTD.
Inventor: Matthew Sendelbach , Niv Sarig , Charles N. Archie
IPC: G03F7/20 , H04B17/309 , H01J37/28 , H04B17/391
Abstract: A method for use in planning metrology measurements, the method comprising: providing inverse total measurement uncertainty (TMU) analysis equations for upper and lower confidence limits TMUUL and TMULL of the TMU being independent on prior knowledge of measurements by a tool under test (TuT) and a reference measurement system (RMS), thereby enabling estimation of input parameters for said equations prior to conducting an experiment of the TMU analysis; and determining at least one of a total number N of samples to be measured in the TMU analysis and an average number ns of measurements per sample by the RMS.
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