公开(公告)号：US10825717B1

公开(公告)日：2020-11-03

申请号：US16505994

申请日：2019-07-09

Applicant: NXP B.V.

Inventor： Ronghua Zhu ,  Eric Ooms ,  Xin Lin

IPC: H01L21/762 ,  H01L21/311 ,  H01L29/40 ,  H01L29/78

Abstract: A method for reducing transistor sensitivity to shallow trench isolation defects (STI) includes filling a trench formed in a substrate of a semiconductor device, at least partially, with a first oxide, the trench defines an STI and includes a defect extending from the substrate. A mask defines a planar area within the isolation region including a first lateral distance between an edge of the mask and an edge of the isolation region. The first oxide is at least partially removed beneath the planar area with an oxide etch to expose a top portion of the defect. The top portion of the defect is removed with a semiconductor etch. After removing the top portion of the defect, the trench is at least partially filled with a second oxide. A field plate of a split-gate transistor is formed over the STI.

公开(公告)号：US09105687B1

公开(公告)日：2015-08-11

申请号：US14254523

申请日：2014-04-16

Applicant: NXP B.V.

Inventor： Jerome Dubois ,  Piet Wessels ,  Gaurav Singh Bisht ,  Jayaraj Thillaigovindan ,  Eric Ooms ,  Naveen Agrawal

IPC: H01L21/762 ,  H01L21/321 ,  H01L21/306

CPC classification number: H01L21/76235 ,  H01L21/30604 ,  H01L21/3065 ,  H01L21/3212 ,  H01L21/76224 ,  H01L21/76232 ,  H01L21/764

Abstract: A method of manufacturing a semiconductor device includes forming a trench that includes a needle defect, depositing a high density plasma oxide over the trench including the needle defect, removing the part of the high density oxide and the liner oxide over the needle defect by applying an oxide etch, and after the step of applying the oxide etch, etching back the needle defect by applying a polysilicon etch.

Abstract translation: 一种制造半导体器件的方法包括形成包括针缺陷的沟槽，在包括针缺陷的沟槽上沉积高密度等离子体氧化物，通过施加一个或多个针孔缺陷来去除部分高密度氧化物和衬垫氧化物 氧化物蚀刻，并且在施加氧化物蚀刻的步骤之后，通过施加多晶硅蚀刻来回蚀针缺陷。