中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

5 records (took 0.024 seconds)

    SEMICONDUCTOR DEVICE
    3.
    发明申请
    SEMICONDUCTOR DEVICE 有权
    半导体器件

    公开(公告)号：US20160043708A1

    公开(公告)日：2016-02-11

    申请号：US14802840

    申请日：2015-07-17

    Applicant: NXP B.V.

    Inventor： Anco Heringa ,  Erwin Hijzen ,  Radu Surdeanu

    IPC: H03K5/24 ,  H01L29/08 ,  H03K17/687 ,  H01L23/522 ,  H01L23/532 ,  H01L29/06 ,  H01L29/78 ,  H01L29/45

    CPC classification number: H03K5/2472 ,  H01L23/5226 ,  H01L23/53271 ,  H01L29/0642 ,  H01L29/0653 ,  H01L29/0865 ,  H01L29/0882 ,  H01L29/404 ,  H01L29/45 ,  H01L29/7816 ,  H01L29/7831 ,  H01L29/7833 ,  H01L29/7836 ,  H01L2924/0002 ,  H03K17/6871 ,  H01L2924/00

    Abstract: A semiconductor device comprising: a substrate having: a first terminal region; a second terminal region; a first extension region that extends from the first terminal region towards the second terminal region; a second extension region that extends from the second terminal region towards the first terminal region; a channel region between the first and second extension regions; a gate conductor that overlies the channel region of the substrate, the gate conductor configured to control conduction in the channel region; a first control conductor that overlies at least a portion of the first extension region, the first control conductor configured to control conduction in the first extension region; and a second control conductor that overlies at least a portion of the second extension region, the second control conductor configured to control conduction in the second extension region, wherein the first and second control conductors are electrically isolated within the semiconductor device from the gate conductor.

    Abstract translation: 一种半导体器件，包括：衬底，具有：第一端子区域; 第二终端区域; 从所述第一端子区域朝向所述第二端子区域延伸的第一延伸区域; 从所述第二端子区域朝向所述第一端子区域延伸的第二延伸区域; 第一和第二延伸区域之间的沟道区域; 栅极导体，其覆盖在所述衬底的沟道区域上，所述栅极导体被配置为控制所述沟道区域中的导通; 第一控制导体，其覆盖在第一延伸区域的至少一部分上，第一控制导体被配置为控制第一延伸区域中的导通; 以及第二控制导体，其覆盖在所述第二延伸区域的至少一部分上，所述第二控制导体被配置为控制所述第二延伸区域中的导通，其中所述第一和第二控制导体在所述半导体器件内与所述栅极导体电隔离。

    SEMICONDUCTOR DEVICE
    4.
    发明申请
    SEMICONDUCTOR DEVICE 有权
    半导体器件

    公开(公告)号：US20150123241A1

    公开(公告)日：2015-05-07

    申请号：US14500889

    申请日：2014-09-29

    Applicant: NXP B.V.

    Inventor： Liang Yan ,  Roel Daamen ,  Anco Heringa ,  Erwin Hijzen

    IPC: H01L27/12 ,  H01L29/06 ,  H01L27/06 ,  H01L23/367

    CPC classification number: H01L27/1203 ,  H01L23/3677 ,  H01L27/0211 ,  H01L29/0653 ,  H01L29/0696 ,  H01L29/7824 ,  H01L2924/0002 ,  H05K7/20 ,  H01L2924/00

    Abstract: An integrated heat sink array is introduced in SOI power devices having multiple unit cells, which can be used to reduce the temperature rise in obtaining more uniform temperature peaks for all the unit cells across the device area, so that the hot spot which is prone to breakdown can be avoided, thus the safe operating area of the device can be improved. Also the array sacrifice less area of the device, therefore results in low Rdson.

    Abstract translation: 在具有多个单元电池的SOI功率器件中引入了集成散热器阵列，其可以用于降低温度上升，从而在器件区域上的所有单元电池获得更均匀的温度峰值，使得易于 可以避免故障，从而可以提高设备的安全工作面积。 此外，阵列牺牲了较少的器件面积，因此导致低Rdson。

Patent Agency Ranking