公开(公告)号：US09461183B2

公开(公告)日：2016-10-04

申请号：US14499654

申请日：2014-09-29

Applicant: NXP B.V.

Inventor： Tim Boettcher ,  Jan Fischer

IPC: H01L29/15 ,  H01L31/0312 ,  H01L29/872 ,  H01L29/165 ,  H01L21/283 ,  H01L29/66 ,  H01L29/861 ,  H01L29/161 ,  H01L29/40 ,  H01L29/45 ,  H01L29/47

CPC classification number: H01L29/8725 ,  H01L21/283 ,  H01L29/161 ,  H01L29/165 ,  H01L29/401 ,  H01L29/407 ,  H01L29/45 ,  H01L29/47 ,  H01L29/66136 ,  H01L29/66143 ,  H01L29/861 ,  H01L29/872

Abstract: A diode comprising a reduced surface field effect trench structure, the reduced surface field effect trench structure comprising at least two trenches formed in a substrate and separated from one another by a joining region of the substrate, the joining region comprising an electrical contact and a layer of p-doped semiconductor material.

Abstract translation: 一种包括减小的表面场效应沟槽结构的二极管，所述减小的表面场效应沟槽结构包括形成在衬底中的至少两个沟槽，并且由衬底的接合区域彼此分离，所述接合区域包括电接触和层 的p掺杂半导体材料。

公开(公告)号：US20150091023A1

公开(公告)日：2015-04-02

申请号：US14499654

申请日：2014-09-29

Applicant: NXP B.V.

Inventor： Tim Boettcher ,  Jan Fischer

IPC: H01L29/872 ,  H01L29/423 ,  H01L21/28 ,  H01L29/165 ,  H01L21/283 ,  H01L29/78 ,  H01L29/16

CPC classification number: H01L29/8725 ,  H01L21/283 ,  H01L29/161 ,  H01L29/165 ,  H01L29/401 ,  H01L29/407 ,  H01L29/45 ,  H01L29/47 ,  H01L29/66136 ,  H01L29/66143 ,  H01L29/861 ,  H01L29/872

Abstract: A diode comprising a reduced surface field effect trench structure, the reduced surface field effect trench structure comprising at least two trenches formed in a substrate and separated from one another by a joining region of the substrate, the joining region comprising an electrical contact and a layer of p-doped semiconductor material.

Abstract translation: 一种包括减小的表面场效应沟槽结构的二极管，所述减小的表面场效应沟槽结构包括形成在衬底中的至少两个沟槽，并且由衬底的接合区域彼此分离，所述接合区域包括电接触和层 的p掺杂半导体材料。