公开(公告)号：US20030042851A1

公开(公告)日：2003-03-06

申请号：US10234160

申请日：2002-09-05

Applicant: National Inst. of Advanced Ind. Science and Tech.

Inventor： Kakuya Iwata ,  Shigeru Niki ,  Paul Fons ,  Akimasa Yamada ,  Koji Matsubara

IPC: H01J001/62 ,  H01J063/04

CPC classification number: H01S5/327 ,  H01L33/28 ,  H01S5/021

Abstract: A light-emitting device includes a silicon substrate, a ZnOSSe layer provided on the silicon substrate that is lattice-matched to the silicon substrate, and a separate confinement heterostructure light-emitting layer that is provided on the ZnOSSe layer and includes an active layer and upper and lower clad layers.

Abstract translation: 发光器件包括硅衬底，设置在与硅衬底晶格匹配的硅衬底上的ZnOSSe层和设置在ZnOSSe层上并包括有源层的单独限制性异质结构发光层，以及 上下包层。

公开(公告)号：US20030122122A1

公开(公告)日：2003-07-03

申请号：US10316824

申请日：2002-12-12

Applicant: National Inst. of Advanced Ind. Science and Tech

Inventor： Kakuya Iwata

IPC: H01L035/24 ,  H01L051/00 ,  H01L029/12

CPC classification number: H01L33/28 ,  H01L21/02422 ,  H01L21/02425 ,  H01L21/02554 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02614 ,  H01L21/02628 ,  H01L21/16 ,  H01L31/02963 ,  H01L31/18 ,  H01L31/1836 ,  Y02E10/50

Abstract: An organometal having as molecular structural elements both a semiconductor anion atom and cation atom is applied to a substrate and reacted under heating to obtain p-type and n-type semiconductor thin films whose p-n junctions enable fabrication of a semiconductor device, light-emitting element or solar cell.

Abstract translation: 将具有半导体阴离子原子和阳离子原子的分子结构元素的有机金属加到衬底上并加热反应，得到p型和n型半导体薄膜，其pn结能够制造半导体器件，发光元件 或太阳能电池。