公开(公告)号：US20200035792A1

公开(公告)日：2020-01-30

申请号：US16487961

申请日：2018-01-22

Applicant: National Institute of Advanced Industrial Science and Technology

Inventor： Naoto Kikuchi ,  Yoshihiro Aiura ,  Akane Samizo ,  Shintarou Ikeda

IPC: H01L29/24 ,  H01L29/04 ,  C01G33/00

Abstract: Provided are an oxide semiconductor excellent in transparency, mobility, and weatherability, etc., and a semiconductor device having the oxide semiconductor, a p-type semiconductor being realizable in the oxide semiconductor. The oxide semiconductor consists of a composite oxide, which has a crystal structure including a foordite structure and contains Nb and Sn elements, and its holes become charge carriers by the condition that Sn4+/(Sn2++Sn4+) which is a ratio of Sn4+ to a total amount of Sn in the composite oxide is 0.006≤Sn4+/(Sn2++Sn4+)≤0.013.

公开(公告)号：US20200027955A1

公开(公告)日：2020-01-23

申请号：US16487993

申请日：2018-01-22

Applicant: National Institute of Advanced Industrial Science and Technology

Inventor： Naoto Kikuchi ,  Yoshihiro Aiura ,  Akane Samizo ,  Shintarou Ikeda

IPC: H01L29/22 ,  H01L29/04 ,  H01L29/786

Abstract: Provided are an oxide semiconductor excellent in transparency, mobility, and weatherability, etc., and a semiconductor device having the oxide semiconductor, a p-type semiconductor being realizable in the oxide semiconductor. The oxide semiconductor consists of a composite oxide, which has a crystal structure including a pyrochlore structure, containing at least one or more kinds of elements selected from Nb and Ta, and containing Sn element, and its holes become charge carriers by the condition that Sn4+/(Sn2++Sn4+) which is a ratio of Sn4+ to a total amount of Sn in the composite oxide is 0.124≤Sn4+/(Sn2++Sn4+)≤0.148.

公开(公告)号：US11239322B2

公开(公告)日：2022-02-01

申请号：US16487993

申请日：2018-01-22

Applicant: National Institute of Advanced Industrial Science and Technology

Inventor： Naoto Kikuchi ,  Yoshihiro Aiura ,  Akane Samizo ,  Shintarou Ikeda

IPC: H01L29/00 ,  H01L29/22 ,  H01L29/04 ,  H01L29/786

Abstract: Provided are an oxide semiconductor excellent in transparency, mobility, and weatherability, etc., and a semiconductor device having the oxide semiconductor, a p-type semiconductor being realizable in the oxide semiconductor. The oxide semiconductor consists of a composite oxide, which has a crystal structure including a pyrochlore structure, containing at least one or more kinds of elements selected from Nb and Ta, and containing Sn element, and its holes become charge carriers by the condition that Sn4+/(Sn2++Sn4+) which is a ratio of Sn4+ to a total amount of Sn in the composite oxide is 0.124≤Sn4+/(Sn2++Sn4+)≤0.148.

公开(公告)号：US20180305219A1

公开(公告)日：2018-10-25

申请号：US15769612

申请日：2016-10-12

Applicant: National Institute of Advanced Industrial Science and Technology

Inventor： Naoto Kikuchi ,  Kazuhiko Tonooka ,  Yoshihiro Aiura ,  Hirofumi Kawanaka ,  Ruiping Wang ,  Hiroshi Takashima ,  Akane Samizo ,  Shintarou Ikeda

IPC: C01G33/00 ,  H01L29/24

CPC classification number: C01G33/006 ,  C01G33/00 ,  C01P2002/36 ,  C01P2002/72 ,  C01P2006/40 ,  C04B35/457 ,  C04B35/495 ,  H01L29/24 ,  H01L29/786

Abstract: There is provided an oxide semiconductor that is capable of achieving p-type semiconductor properties in the oxide semiconductor and has excellent transparency, mobility and weather resistance. The oxide semiconductor is achieved by an oxide composite having a pyrochlore structure that contains Sn and Nb whose composition ratio Sn/Nb is 0.81≤Sn/Nb