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公开(公告)号：US20100129546A1
公开(公告)日：2010-05-27
申请号：US12579457
申请日：2009-10-15
CPC分类号： H01L21/6715 , H01L21/68728 , H01L21/68785
摘要： A protective film forming method for forming a protective film of resin on a work surface of a wafer. The protective film forming method includes a wafer holding step of holding the wafer on a spinner table in the condition where the work surface is oriented upward, a spray coating step of spraying first liquid resin onto the work surface of the wafer as rotating the spinner table at a first rotational speed after performing the wafer holding step, a liquid resin supplying step of dropping a predetermined amount of second liquid resin onto a central area of the work surface of the wafer as rotating the spinner table at a second rotational speed lower than the first rotational speed after performing the spray coating step, and a spin coating step of rotating the spinner table at a third rotational speed higher than the first rotational speed after performing the liquid resin supplying step to thereby spread the second liquid resin dropped onto the central area of the work surface of the wafer, thus forming the protective film on the work surface of the wafer.
摘要翻译： 一种用于在晶片的工作表面上形成树脂保护膜的保护膜形成方法。 保护膜形成方法包括在工作面向上取向的状态下将晶片保持在旋转台上的晶片保持工序，将旋转微调台的第一液体树脂喷射到晶片的工作面上的喷涂工序 在执行晶片保持步骤之后的第一旋转速度下，将液体树脂供给步骤，以预定量的第二液体树脂以低于所述晶片保持步骤的第二旋转速度旋转所述旋转台，将所述第二液体树脂滴落到所述晶片的工作表面的中心区域 在进行喷涂步骤后的第一转速以及在进行液体树脂供给步骤之后以高于第一转速的第三转速旋转旋转台的旋涂步骤，从而将落在中心区域上的第二液体树脂 的晶片的工作表面，从而在晶片的工作表面上形成保护膜。
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公开(公告)号：US08461025B2
公开(公告)日：2013-06-11
申请号：US12873407
申请日：2010-09-01
申请人： Nobuyasu Kitahara
发明人： Nobuyasu Kitahara
IPC分类号： H01L21/00 , H01L21/31 , H01L21/469
CPC分类号： H01L21/56 , H01L2924/0002 , H01L2924/00
摘要： A protective film forming method for forming a protective film of resin on the front side of a wafer, where the method includes a step of holding the wafer on a spinner table in the condition where the front side of said wafer is oriented upward; a step of forming a water layer of a thickness of between about 1 mm and about 3 mm to cover the front side of the wafer; a step of dropping a liquid resin onto the water layer at the center of the wafer; and a step of rotating the spinner table to rotate the wafer held on the spinner table, thereby scattering the water layer and radially spreading the liquid resin dropped on the water layer to form a first resin film covering the front side of the wafer by a centrifugal force produced during rotation of the wafer.
摘要翻译： 一种用于在晶片正面形成树脂保护膜的保护膜形成方法，其中该方法包括在晶片正面朝向上方的状态下将晶片保持在旋转台上的步骤; 形成厚度在约1mm和约3mm之间的水层以覆盖晶片的前侧的步骤; 将液体树脂滴落到晶片中心的水层上的步骤; 以及旋转旋转台以使保持在旋转台上的晶片旋转的步骤，从而使水层飞散并使滴落在水层上的液态树脂径向展开，形成通过离心机覆盖晶片前侧的第一树脂膜 在晶片旋转期间产生的力。
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公开(公告)号：US20060216911A1
公开(公告)日：2006-09-28
申请号：US11384355
申请日：2006-03-21
IPC分类号： H01L21/00
CPC分类号： B23K26/40 , B23K2103/172
摘要： A wafer laser processing method for forming a groove in a wafer having a protective film on the processing surface of a substrate along a predetermined processing line, comprising a first step for forming a first groove in the protective film along the dividing lines by applying a first pulse laser beam set to an output at which the protective film can be processed but the substrate can not be processed, to the protective film along the processing lines; and a second step for forming a second groove in the substrate along the first grooves by applying a second pulse laser beam set to an output at which the substrate can be processed, along the first grooves.
摘要翻译： 一种用于在沿着预定处理线的基板的处理表面上具有保护膜的晶片中形成凹槽的晶片激光加工方法，包括：通过施加第一工序，沿着分割线在保护膜中形成第一凹槽的第一步骤 将脉冲激光束设置到可以处理保护膜但不能处理衬底的输出到处理线的保护膜; 以及第二步骤，通过沿着第一凹槽施加第二脉冲激光束设置到可以处理基板的输出端，沿着第一凹槽在基板中形成第二凹槽。
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公开(公告)号：US07446022B2
公开(公告)日：2008-11-04
申请号：US11384355
申请日：2006-03-21
IPC分类号： H01L21/301 , B23K26/38
CPC分类号： B23K26/40 , B23K2103/172
摘要： A wafer laser processing method for forming a groove in a wafer having a protective film on the processing surface of a substrate along a predetermined processing line, comprising a first step for forming a first groove in the protective film along the dividing lines by applying a first pulse laser beam set to an output at which the protective film can be processed but the substrate can not be processed, to the protective film along the processing lines; and a second step for forming a second groove in the substrate along the first grooves by applying a second pulse laser beam set to an output at which the substrate can be processed, along the first grooves.
摘要翻译： 一种用于在沿着预定处理线的基板的处理表面上具有保护膜的晶片中形成凹槽的晶片激光加工方法，包括：通过施加第一工序，沿着分割线在保护膜中形成第一凹槽的第一步骤 将脉冲激光束设置到可以处理保护膜但不能处理衬底的输出到处理线的保护膜; 以及第二步骤，通过沿着第一凹槽施加第二脉冲激光束设置到可以处理基板的输出端，沿着第一凹槽在基板中形成第二凹槽。
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公开(公告)号：US20070054498A1
公开(公告)日：2007-03-08
申请号：US11514901
申请日：2006-09-05
IPC分类号： H01L21/31
CPC分类号： H01L21/6715 , Y10S438/906
摘要： A method for applying a resin film to the face of a semiconductor wafer, comprising: an assembly holding step of holding an assembly on the surface of chuck means, with the back of the assembly being opposed to the surface of the chuck means, the assembly including a frame having a mounting opening formed in a central portion of the frame, and a semiconductor wafer mounted in the mounting opening of the frame by sticking a mounting tape to the back of the frame and the back of the semiconductor wafer; a liquid droplet supply step of supplying liquid droplets of a solution having a resin dissolved therein onto the face of the semiconductor wafer in the assembly after the assembly holding step; and a spreading step of rotating the chuck means subsequently to the liquid droplet supply step, thereby spreading the liquid droplets throughout the face of the semiconductor wafer. The method further comprises a cleaning step of rotating the chuck means and also supplying a cleaning fluid to the surface of the frame after the spreading step, thereby cleaning the solution which has adhered to the surface of the frame.
摘要翻译： 一种将树脂膜施加到半导体晶片的表面的方法，包括：组件保持步骤，其将组件保持在卡盘装置的表面上，其中组件的背面与卡盘装置的表面相对，组件 包括具有形成在框架的中心部分中的安装开口的框架，以及通过将安装带粘贴到框架的后部和半导体晶片的背面而安装在框架的安装开口中的半导体晶片; 液滴供给步骤，在组装保持步骤之后，在组件中将溶解有树脂的溶液的液滴供给到半导体晶片的表面上; 以及随后在液滴供给步骤旋转卡盘装置的扩散步骤，从而使液滴在半导体晶片的整个表面上扩展。 该方法还包括一个清洁步骤，用于旋转卡盘装置，并且在扩展步骤之后还将清洁流体提供给框架的表面，从而清洁粘附到框架表面的溶液。
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6.发明授权公开(公告)号：US09090783B2
公开(公告)日：2015-07-28
申请号：US12707102
申请日：2010-02-17
CPC分类号： C09D5/32 , B23K26/40 , B23K2101/40 , B23K2103/50 , H01L21/67092
摘要： A protective film agent for laser dicing according to the present invention comprises a solution having, dissolved therein, a water-soluble resin and at least one laser light absorber selected from the group consisting of a water-soluble dye, a water-soluble coloring matter, and a water-soluble ultraviolet absorber. The protective film agent is coated on a surface of a wafer, which is to be processed, and is then dried to form a protective film. Laser dicing through the protective film produces chips from the wafer. As a result, deposition of debris can be effectively prevented on the entire face of the chips, including their peripheral edge portions.
摘要翻译： 根据本发明的用于激光切割的保护膜剂包括溶解在其中的水溶性树脂和至少一种选自水溶性染料，水溶性着色剂 ，和水溶性紫外线吸收剂。 将保护膜剂涂布在待加工的晶片的表面上，然后干燥以形成保护膜。 通过保护膜的激光切割从晶片产生芯片。 结果，可以在芯片的整个表面（包括它们的周缘部分）上有效地防止碎屑沉积。
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公开(公告)号：US07799700B2
公开(公告)日：2010-09-21
申请号：US11514901
申请日：2006-09-05
CPC分类号： H01L21/6715 , Y10S438/906
摘要： A method for applying a resin film to the face of a semiconductor wafer, comprising: an assembly holding step of holding an assembly on the surface of chuck means, with the back of the assembly being opposed to the surface of the chuck means, the assembly including a frame having a mounting opening formed in a central portion of the frame, and a semiconductor wafer mounted in the mounting opening of the frame by sticking a mounting tape to the back of the frame and the back of the semiconductor wafer; a liquid droplet supply step of supplying liquid droplets of a solution having a resin dissolved therein onto the face of the semiconductor wafer in the assembly after the assembly holding step; and a spreading step of rotating the chuck means subsequently to the liquid droplet supply step, thereby spreading the liquid droplets throughout the face of the semiconductor wafer. The method further comprises a cleaning step of rotating the chuck means and also supplying a cleaning fluid to the surface of the frame after the spreading step, thereby cleaning the solution which has adhered to the surface of the frame.
摘要翻译： 一种将树脂膜施加到半导体晶片的表面的方法，包括：组件保持步骤，其将组件保持在卡盘装置的表面上，其中组件的背面与卡盘装置的表面相对，组件 包括具有形成在框架的中心部分中的安装开口的框架，以及通过将安装带粘贴到框架的后部和半导体晶片的背面而安装在框架的安装开口中的半导体晶片; 液滴供给步骤，在组装保持步骤之后，在组件中将溶解有树脂的溶液的液滴供给到半导体晶片的表面上; 以及随后在液滴供给步骤旋转卡盘装置的扩散步骤，从而使液滴在半导体晶片的整个表面上扩展。 该方法还包括一个清洁步骤，用于旋转卡盘装置，并且在扩展步骤之后还将清洁流体提供给框架的表面，从而清洁粘附到框架表面的溶液。
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公开(公告)号：US07396780B2
公开(公告)日：2008-07-08
申请号：US11261600
申请日：2005-10-31
申请人： Hitoshi Hoshino , Ryugo Oba , Kenji Furuta , Noburu Takeda , Nobuyasu Kitahara
发明人： Hitoshi Hoshino , Ryugo Oba , Kenji Furuta , Noburu Takeda , Nobuyasu Kitahara
IPC分类号： H01L21/324
CPC分类号： H01L21/67092 , B23K26/0853 , B23K26/702
摘要： A method of carrying out the laser processing of a wafer with a laser beam processing machine comprising a chuck table for holding a wafer, a laser beam application means for applying a laser beam to the wafer held on the chuck table and a processing-feed means for processing-feeding the chuck table and the laser beam application means relative to each other, comprising the steps of a wafer affixing step for putting the wafer on the surface of a protective tape mounted on an annular frame, a wafer holding step for holding the wafer put on the protective tape on the chuck table, and a laser beam application step for applying a laser beam having a predetermined wavelength from the laser beam application means to the wafer held on the chuck table and processing-feeding the wafer with the processing-feed means, wherein the protective tape is made of a material which transmits the laser beam having a predetermined wavelength applied from the laser beam application means.
摘要翻译： 一种利用激光束处理机进行激光加工的方法，所述激光束处理机包括用于保持晶片的卡盘台，激光束施加装置，用于将激光束施加到保持在卡盘台上的晶片上，以及加工进给装置 用于将夹盘和激光束施加装置相对于彼此进行加工，包括以下步骤：将晶片放置在安装在环形框架上的保护带的表面上的晶片固定步骤，用于保持 晶片放在卡盘台上的保护带上，以及激光束施加步骤，用于将来自激光束施加装置的具有预定波长的激光束施加到保持在卡盘台上的晶片上， 馈送装置，其中保护带由透射从激光束施加装置施加的具有预定波长的激光束的材料制成。
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公开(公告)号：US20060094260A1
公开(公告)日：2006-05-04
申请号：US11261600
申请日：2005-10-31
申请人： Hitoshi Hoshino , Ryugo Oba , Kenji Furuta , Noburu Takeda , Nobuyasu Kitahara
发明人： Hitoshi Hoshino , Ryugo Oba , Kenji Furuta , Noburu Takeda , Nobuyasu Kitahara
IPC分类号： H01L21/324
CPC分类号： H01L21/67092 , B23K26/0853 , B23K26/702
摘要： A method of carrying out the laser processing of a wafer with a laser beam processing machine comprising a chuck table for holding a wafer, a laser beam application means for applying a laser beam to the wafer held on the chuck table and a processing-feed means for processing-feeding the chuck table and the laser beam application means relative to each other, comprising the steps of a wafer affixing step for putting the wafer on the surface of a protective tape mounted on an annular frame, a wafer holding step for holding the wafer put on the protective tape on the chuck table, and a laser beam application step for applying a laser beam having a predetermined wavelength from the laser beam application means to the wafer held on the chuck table and processing-feeding the wafer with the processing-feed means, wherein the protective tape is made of a material which transmits the laser beam having a predetermined wavelength applied from the laser beam application means.
摘要翻译： 一种利用激光束处理机进行激光加工的方法，所述激光束处理机包括用于保持晶片的卡盘台，激光束施加装置，用于将激光束施加到保持在卡盘台上的晶片上，以及加工进给装置 用于将夹盘和激光束施加装置相对于彼此进行加工，包括以下步骤：将晶片放置在安装在环形框架上的保护带的表面上的晶片固定步骤，用于保持 晶片放在卡盘台上的保护带上，以及激光束施加步骤，用于将来自激光束施加装置的具有预定波长的激光束施加到保持在卡盘台上的晶片上， 馈送装置，其中保护带由透射从激光束施加装置施加的具有预定波长的激光束的材料制成。
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10.发明授权Fabrication method for device having die attach film on the back side thereof 有权在其后侧具有管芯附着膜的器件的制造方法公开(公告)号：US07915140B2
公开(公告)日：2011-03-29
申请号：US12430576
申请日：2009-04-27
申请人： Satoshi Genda , Nobuyasu Kitahara
发明人： Satoshi Genda , Nobuyasu Kitahara
IPC分类号： H01L21/46 , H01L21/78 , H01L21/301
CPC分类号： H01L21/78
摘要： A device fabrication method for fabricating individual devices from a wafer, wherein the back side of each device is covered with an adhesive film for die bonding. The device fabrication method includes a wafer dividing step of dividing the wafer into the individual devices along a plurality of kerfs by using a dicing before grinding process, an adhesive film mounting step of mounting an adhesive film on the back side of the wafer after performing the wafer dividing step, and an adhesive film dividing step of applying a laser beam to the adhesive film along the kerfs after performing the adhesive film mounting step, thereby dividing the adhesive film along the kerfs.
摘要翻译： 一种用于从晶片制造各个器件的器件制造方法，其中每个器件的背面被用于芯片接合的粘合剂膜覆盖。 该器件制造方法包括：晶片分割步骤，通过在研磨处理之前使用切片将晶片分割成多个切口的单个器件;粘合膜安装步骤，在执行所述晶片的背面之后，将粘合剂膜安装在晶片的背面 晶片分割工序，以及粘合膜分割工序，在进行粘合膜安装工序之后，沿着切口将粘合膜施加激光束，从而沿着切口划分粘合膜。
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