公开(公告)号：US20070298615A1

公开(公告)日：2007-12-27

申请号：US11668679

申请日：2007-01-30

申请人： Nobuyuki Matsuzawa ,  Atsuhiro Ando ,  Eriko Matsui ,  Yuko Yamaguchi ,  Katsuhisa Kugimiya ,  Tetsuya Tatsumi ,  Salam Kazi ,  Takeshi Iwai ,  Makiko Irie

发明人： Nobuyuki Matsuzawa ,  Atsuhiro Ando ,  Eriko Matsui ,  Yuko Yamaguchi ,  Katsuhisa Kugimiya ,  Tetsuya Tatsumi ,  Salam Kazi ,  Takeshi Iwai ,  Makiko Irie

IPC分类号： H01L21/311

CPC分类号： H01L21/0273 ,  G03F7/40 ,  H01L21/28123 ,  H01L21/32139

摘要： A pattern forming method is provided. The pattern forming method includes a first step of forming a resist pattern including a lactone group-containing skeleton above an etched layer provided on a substrate; a second step of performing plasma processing using a hydrogen-containing gas to lower a glass transition temperature or a softening point of the resist pattern; and a third step of transferring the resist pattern after the plasma processing to the etched layer by etching, and forming the pattern of the etched layer.

摘要翻译： 提供了图案形成方法。 图案形成方法包括：在设置在基板上的蚀刻层的上方形成含有含内酯基的骨架的抗蚀剂图案的第一工序; 使用含氢气体进行等离子体处理以降低玻璃化转变温度或抗蚀剂图案的软化点的第二步骤; 以及通过蚀刻将等离子体处理后的抗蚀剂图案转印到蚀刻层的第三步骤，以及形成蚀刻层的图案。

公开(公告)号：US20090233411A1

公开(公告)日：2009-09-17

申请号：US12472860

申请日：2009-05-27

申请人： Atsuhiro Ando

发明人： Atsuhiro Ando

IPC分类号： H01L21/336

CPC分类号： H01L29/66636 ,  H01L21/30608 ,  H01L29/41775 ,  H01L29/6656 ,  H01L29/66628

摘要： A semiconductor device includes a side wall spacer formed on the side surface of a gate electrode formed on the upper side of a semiconductor substrate with a gate insulation film therebetween, extension regions built up on the semiconductor substrate, and source/drain regions formed on the extension regions, wherein a first epitaxial layer is formed so as to fill up portions, cut out at the time of forming the side wall spacer, of the semiconductor substrate, and the extension regions are formed on the first epitaxial layer from a second epitaxial layer of a conduction type opposite to that of the first epitaxial layer.

摘要翻译： 半导体器件包括形成在半导体衬底的上侧上的栅电极的侧表面上的侧壁隔离物，其间具有栅极绝缘膜，在半导体衬底上形成的延伸区域和形成在该半导体衬底上的源极/漏极区域 延伸区域，其中形成第一外延层以便填充形成半导体衬底的侧壁间隔物形成时的部分，并且延伸区域从第二外延层形成在第一外延层上 的导电类型与第一外延层的导电类型相反。

公开(公告)号：US08736727B2

公开(公告)日：2014-05-27

申请号：US13071703

申请日：2011-03-25

申请人： Atsuhiro Ando

发明人： Atsuhiro Ando

IPC分类号： H04N3/14

CPC分类号： H01L27/14623 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/14685 ,  H01L27/14818

摘要： A solid-state imaging device includes a photoelectric conversion portion, a charge-receiving portion to which charges are transferred from the photoelectric conversion portion, and a light control film having a reverse tapered opening over the photoelectric conversion portion to reduce the intensity of diffracted light diffusing to regions other than the photoelectric conversion portion.

摘要翻译： 固态成像装置包括光电转换部分，电荷从光电转换部分转移的电荷接收部分，以及在光电转换部分上具有倒锥形开口的光控制膜，以降低衍射光的强度 扩散到光电转换部以外的区域。

公开(公告)号：US08012840B2

公开(公告)日：2011-09-06

申请号：US12472860

申请日：2009-05-27

申请人： Atsuhiro Ando

发明人： Atsuhiro Ando

IPC分类号： H01L21/336

CPC分类号： H01L29/66636 ,  H01L21/30608 ,  H01L29/41775 ,  H01L29/6656 ,  H01L29/66628

摘要： A semiconductor device includes a side wall spacer formed on the side surface of a gate electrode formed on the upper side of a semiconductor substrate with a gate insulation film therebetween, extension regions built up on the semiconductor substrate, and source/drain regions formed on the extension regions, wherein a first epitaxial layer is formed so as to fill up portions, cut out at the time of forming the side wall spacer, of the semiconductor substrate, and the extension regions are formed on the first epitaxial layer from a second epitaxial layer of a conduction type opposite to that of the first epitaxial layer.

摘要翻译： 半导体器件包括形成在半导体衬底的上侧上的栅电极的侧表面上的侧壁隔离物，其间具有栅极绝缘膜，在半导体衬底上形成的延伸区域和形成在该半导体衬底上的源极/漏极区域 延伸区域，其中形成第一外延层以便填充形成半导体衬底的侧壁间隔物形成时的部分，并且延伸区域从第二外延层形成在第一外延层上 的导电类型与第一外延层的导电类型相反。

公开(公告)号：US20060192232A1

公开(公告)日：2006-08-31

申请号：US11358022

申请日：2006-02-21

申请人： Atsuhiro Ando

发明人： Atsuhiro Ando

IPC分类号： H01L29/76

CPC分类号： H01L29/66636 ,  H01L21/30608 ,  H01L29/41775 ,  H01L29/6656 ,  H01L29/66628

摘要： A semiconductor device includes a side wall spacer formed on the side surface of a gate electrode formed on the upper side of a semiconductor substrate with a gate insulation film therebetween, extension regions built up on the semiconductor substrate, and source/drain regions formed on the extension regions, wherein a first epitaxial layer is formed so as to fill up portions, cut out at the time of forming the side wall spacer, of the semiconductor substrate, and the extension regions are formed on the first epitaxial layer from a second epitaxial layer of a conduction type opposite to that of the first epitaxial layer.

公开(公告)号：US20110242376A1

公开(公告)日：2011-10-06

申请号：US13071703

申请日：2011-03-25

申请人： Atsuhiro Ando

发明人： Atsuhiro Ando

IPC分类号： H04N5/335 ,  H01L27/146 ,  H01L31/18 ,  H04N5/225

CPC分类号： H01L27/14623 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/14685 ,  H01L27/14818

摘要： A solid-state imaging device includes a photoelectric conversion portion, a charge-receiving portion to which charges are transferred from the photoelectric conversion portion, and a light control film having a reverse tapered opening over the photoelectric conversion portion to reduce the intensity of diffracted light diffusing to regions other than the photoelectric conversion portion.

摘要翻译： 固态成像装置包括光电转换部分，电荷从光电转换部分转移的电荷接收部分，以及在光电转换部分上具有倒锥形开口的光控制膜，以降低衍射光的强度 扩散到光电转换部以外的区域。

公开(公告)号：US07557396B2

公开(公告)日：2009-07-07

申请号：US11358022

申请日：2006-02-21

申请人： Atsuhiro Ando

发明人： Atsuhiro Ando

IPC分类号： H01L21/336

CPC分类号： H01L29/66636 ,  H01L21/30608 ,  H01L29/41775 ,  H01L29/6656 ,  H01L29/66628

摘要： A semiconductor device includes a side wall spacer formed on the side surface of a gate electrode formed on the upper side of a semiconductor substrate with a gate insulation film therebetween, extension regions built up on the semiconductor substrate, and source/drain regions formed on the extension regions, wherein a first epitaxial layer is formed so as to fill up portions, cut out at the time of forming the side wall spacer, of the semiconductor substrate, and the extension regions are formed on the first epitaxial layer from a second epitaxial layer of a conduction type opposite to that of the first epitaxial layer.

摘要翻译： 半导体器件包括形成在半导体衬底的上侧上的栅电极的侧表面上的侧壁隔离物，其间具有栅极绝缘膜，在半导体衬底上形成的延伸区域和形成在该半导体衬底上的源极/漏极区域 延伸区域，其中形成第一外延层以便填充形成半导体衬底的侧壁间隔物形成时的部分，并且延伸区域从第二外延层形成在第一外延层上 的导电类型与第一外延层的导电类型相反。