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公开(公告)号：US07655377B2
公开(公告)日：2010-02-02
申请号：US11361750
申请日：2006-02-23
CPC分类号： G03F7/091 , G03F7/70341
摘要： An antireflection film wherein, even where exposure light enters obliquely in a liquid immersion lithography technique, a sufficiently reduced reflectance can be achieved at the interface between a resist layer and a silicon substrate. A two-layer antireflection film is used in exposure by an exposure system having a wavelength of 190 to 195 nm and a numerical aperture of 1.0 or less and formed between the resist layer and the silicon substrate. Where complex refractive indices N1 and N2 and film thicknesses of upper and lower layers of the antireflection film are represented by n1-k1i, n2-k2i and d1, d2, respectively, and a predetermined combination of values of [n10, k10, d10, n20, k20, d20] is selected, n1, k1, d1, n2, k2 and d2 satisfy {(n1-n10)/(n1m-n10)}2+{(k1-k10)/(k1m-k10)}2+{(d1-d10)/(d1m-d10)}2+{(n2-n20)/(n2m-n20)}2+{(k2-k20)/(k2m-k20)}2+{(d2-d20)/(d2m-d20)}2≦1.
摘要翻译： 一种防反射膜，其中即使在曝光光在液浸光刻技术中倾斜入射时，也可以在抗蚀剂层和硅衬底之间的界面处实现充分降低的反射率。 通过具有190〜195nm的波长和1.0以下的数值孔径的曝光系统，在抗蚀剂层和硅基板之间形成双层抗反射膜。 复数折射率N1和N2以及防反射膜的上层和下层的膜厚分别由n1-k1i，n2-k2i和d1，d2表示，并且[n10，k10，d10，...， n2，k20，d20]，n1，k1，d1，n2，k2，d2满足{（n1-n10）/（n1m-n10）} 2 + {（k1-k10）/（k1m-k10）} 2 + {（d1-d10）/（d1m-d10）} 2 + {（n2-n20）/（n2m-n20）} 2 + {（k2-k20）/（k2m-k20） d20）/（d2m-d20）} 2 <= 1。
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2.发明申请公开(公告)号：US20070298615A1
公开(公告)日：2007-12-27
申请号：US11668679
申请日：2007-01-30
申请人： Nobuyuki Matsuzawa , Atsuhiro Ando , Eriko Matsui , Yuko Yamaguchi , Katsuhisa Kugimiya , Tetsuya Tatsumi , Salam Kazi , Takeshi Iwai , Makiko Irie
发明人： Nobuyuki Matsuzawa , Atsuhiro Ando , Eriko Matsui , Yuko Yamaguchi , Katsuhisa Kugimiya , Tetsuya Tatsumi , Salam Kazi , Takeshi Iwai , Makiko Irie
IPC分类号： H01L21/311
CPC分类号： H01L21/0273 , G03F7/40 , H01L21/28123 , H01L21/32139
摘要： A pattern forming method is provided. The pattern forming method includes a first step of forming a resist pattern including a lactone group-containing skeleton above an etched layer provided on a substrate; a second step of performing plasma processing using a hydrogen-containing gas to lower a glass transition temperature or a softening point of the resist pattern; and a third step of transferring the resist pattern after the plasma processing to the etched layer by etching, and forming the pattern of the etched layer.
摘要翻译： 提供了图案形成方法。 图案形成方法包括：在设置在基板上的蚀刻层的上方形成含有含内酯基的骨架的抗蚀剂图案的第一工序; 使用含氢气体进行等离子体处理以降低玻璃化转变温度或抗蚀剂图案的软化点的第二步骤; 以及通过蚀刻将等离子体处理后的抗蚀剂图案转印到蚀刻层的第三步骤，以及形成蚀刻层的图案。
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公开(公告)号：US06358665B1
公开(公告)日：2002-03-19
申请号：US09529371
申请日：2000-07-03
申请人： Georg Pawlowski , Hiroshi Okazaki , Yoshiaki Kinoshita , Naoko Tsugama , Aritaka Hishida , Xiao-Ming Ma , Yuko Yamaguchi
发明人： Georg Pawlowski , Hiroshi Okazaki , Yoshiaki Kinoshita , Naoko Tsugama , Aritaka Hishida , Xiao-Ming Ma , Yuko Yamaguchi
IPC分类号： G03F7004
CPC分类号： G03F7/004 , C07C309/06 , C07C381/12 , G03F7/0045 , G03F7/038 , G03F7/0382 , G03F7/039 , G03F7/0392 , Y10S430/115 , Y10S430/122
摘要： Disclosed is a chemically amplified radiation sensitive composition containing a hydroxystyrene resin and an onium salt precursor which generates a fluorinated alkanesulfonic acid as a photoacid generator, wherein the photoacid generator is a sulfonium or iodonium salt of a fluorinated alkane sulfonic acid, represented by formula (I): Y+ASO3− (I) wherein A represents CF3CHFCF2 or CF3CF2CF2CF2; and Y represents wherein R1, R2, R3, R4, and R5 each independently represent an alkyl group, a monocyclic or bicyclic alkyl group, a cyclic alkylcarbonyl group, a phenyl group, a naphthyl group, an anthryl group, a peryl group, a pyryl group, a thienyl group, an aralkyl group, or an arylcarbonylmethylene group, or any two of R1, R2, and R3 or R4 and R5 together represent an alkylene or an oxyalkylene which forms a five- or six-membered ring together with the interposing sulfur or iodine, said ring being optionally condensed with aryl groups.
摘要翻译： 公开了含有羟基苯乙烯树脂和鎓盐前体的化学放大的辐射敏感性组合物，其产生氟代烷烃磺酸作为光酸产生剂，其中光酸产生剂是由式（I）表示的氟化烷烃磺酸的锍盐或碘鎓盐 ）：其中A表示CF 3 CHFCF 2或CF 3 CF 2 CF 2 CF 2; Y表示其中R 1，R 2，R 3，R 4和R 5各自独立地表示烷基，单环或双环烷基，环烷基羰基，苯基，萘基，蒽基，戊基，吡啶基 基团，噻吩基，芳烷基或芳基羰基亚甲基，或R 1，R 2和R 3或R 4和R 5中的任何两个一起表示与插入物形成五元或六元环的亚烷基或氧化烯 硫或碘，所述环任选地与芳基稠合。
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公开(公告)号：US06284427B1
公开(公告)日：2001-09-04
申请号：US09308582
申请日：1999-08-05
IPC分类号： G03C173
CPC分类号： G03F7/039 , C08F8/00 , C08F8/14 , C08F8/18 , C08F212/14 , C08F257/02 , C08F2800/20 , C08F2810/30 , C08L25/18 , C09D125/18 , G03F7/0045 , Y10S430/119 , C08F12/14 , C08F216/125 , C08F220/14 , C08F220/06 , C08F112/14
摘要： A resist composition is prepared by reacting an alkali-soluble polymer having a phenolic hydroxyl or carboxyl groups with a vinyl ether compound in an aprotic solvent, such as propylene glycol monomethyl ether acetate, in the presence of an acid catalyst, suspending the reaction by the addition of a base, and directly adding a photoacid generator to the reaction solution. When a dialkyl dicarbonate is used in stead of the vinyl ether compound, a resist composition is prepared by carrying out the reaction in the presence of a basic catalyst and adding a photoacid generator directly to the reaction. Thus resist compositions can be prepared without isolating or purifying an alkali-soluble polymer which has been substituted by a catalytic reaction.
摘要翻译： 抗蚀剂组合物通过使酸性催化剂存在下使非酚质子溶剂如丙二醇单甲醚乙酸酯中的具有酚羟基或羧基的碱溶性聚合物与乙烯基醚化合物反应来制备， 加入碱，并将光致酸产生剂直接加入到反应溶液中。 当使用二碳酸二烷基酯代替乙烯基醚化合物时，通过在碱性催化剂的存在下进行反应并直接向反应中加入光致酸产生剂制备抗蚀剂组合物。 因此，可以在不分离或纯化已经被催化反应取代的碱溶性聚合物的情况下制备抗蚀剂组合物。
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公开(公告)号：US20060194125A1
公开(公告)日：2006-08-31
申请号：US11361750
申请日：2006-02-23
CPC分类号： G03F7/091 , G03F7/70341
摘要： An antireflection film wherein, even where exposure light enters obliquely in a liquid immersion lithography technique, a sufficiently reduced reflectance can be achieved at the interface between a resist layer and a silicon substrate. A two-layer antireflection film is used in exposure by an exposure system having a wavelength of 190 to 195 nm and a numerical aperture of 1.0 or less and formed between the resist layer and the silicon substrate. Where complex refractive indices N1 and N2 and film thicknesses of upper and lower layers of the antireflection film are represented by n1-k1i, n2-k2i and d1, d2, respectively, and a predetermined combination of values of [n10, k10, d10, n20, k20, d20] is selected, n1, k1, d1, n2, k2 and d2 satisfy {(n1-n10)/(n1m-n10)}2+{(k1-k10)/(k1m-k10)}2+{(d1-d10)/(d1m-d10)}2+{(n2-n20)/(n2m-n20)}2+{(k2-k20)/(k2m-k20)}2+{(d2-d20)/(d2m-d20)}2≦1.
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公开(公告)号：US06527966B1
公开(公告)日：2003-03-04
申请号：US09445346
申请日：2000-05-01
IPC分类号： B44C122
CPC分类号： G03F7/0045 , G03F7/091 , H01L21/0276 , H01L21/31138 , H01L21/32137 , H01L21/32139
摘要： A method of forming a pattern in which production of reaction products in the interface between an organic anti-reflective coating and a radiation sensitive material coating is suppressed, the number of residues of an etchable layer formed after etching is decreased, and which provides a etched pattern having high resolution and good dimensional accuracy. According to the method, an etchable layer (11) composed of polysilicon coating an organic anti-reflective coating (12), and a radiation sensitive material coating (13) composed of a chemically amplified resist material containing as acid generators both (a) onium salt compound and (b) at least one of a sulfone compound and a sulfonate compound are formed on a semiconductor substrate (10), the radiation sensitive material coating (13) is imagewise exposed through the mask (14) and developed to form a patterned radiation sensitive material coating (13b). Thereafter, preferably the anti-reflective coating is etched using a mixture gas of SO2 and O2, further the etchable layer is dry-etched to form a pattern of the etchable layer.
摘要翻译： 形成在有机抗反射涂层和辐射敏感材料涂层之间的界面中反应产物的产生被抑制的图案的方法，蚀刻后形成的可蚀刻层的残留数量减少，并且提供蚀刻 图案具有高分辨率和良好的尺寸精度。 根据该方法，由多晶硅涂覆有机抗反射涂层（12）组成的可蚀刻层（11）和由化学放大抗蚀剂材料组成的辐射敏感材料涂层（13），所述抗蚀剂材料包含（a） 盐化合物和（b）在半导体衬底（10）上形成砜化合物和磺酸盐化合物中的至少一种，将辐射敏感材料涂层（13）通过掩模（14）成像曝光并显影以形成图案化 辐射敏感材料涂层（13b）。 此后，优选地使用SO 2和O 2的混合气体来蚀刻抗反射涂层，此外，可蚀刻的层被干蚀刻以形成可蚀刻层的图案。
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公开(公告)号：US06848198B2
公开(公告)日：2005-02-01
申请号：US10730667
申请日：2003-12-08
申请人： Yuko Yamaguchi
发明人： Yuko Yamaguchi
IPC分类号： H01L21/027 , H01L21/00 , H01L21/324 , F26B3/00
CPC分类号： H01L21/67017 , H01L21/67103
摘要： A heat treatment apparatus for preventing quality defects of an object to be heat-treated even when sublimating components produced in heat treatment become solids and drop down in the heat treatment apparatus, wherein a gas generated when heating an object to be heat-treated, coated with a coating solution and placed on a stage is passed through a trap made of a permeable porous film and is exhausted from an exhaust port of a cover and wherein solids produced and dropping down when gas passed through the trap of the permeable porous film solidifies at a top plate of the cover are trapped by the trap.
摘要翻译： 即使在热处理中产生的升华成分在热处理装置中升温成为固体和滴落的情况下，也能够防止被热处理的物品的质量缺陷的热处理装置，其中，对加热被处理物体进行加热时产生的气体 放置在台上的涂布溶液通过由可渗透的多孔膜制成的捕集阱，并从盖的排出口排出，并且当气体通过可渗透多孔膜的捕集器的固体产生和滴落的固体固化在 盖子的顶板被陷阱困住。
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公开(公告)号：US07094994B2
公开(公告)日：2006-08-22
申请号：US10795347
申请日：2004-03-09
申请人： Kenichi Oyama , Atsushi Someya , Yuko Yamaguchi
发明人： Kenichi Oyama , Atsushi Someya , Yuko Yamaguchi
CPC分类号： H01L21/67248 , H01L21/67103 , H01L21/67109 , H05B3/68
摘要： A semiconductor wafer heat treatment apparatus and method, which can carry out a heat treatment to suppress variations in line widths within a surface on a semiconductor wafer and the like, includes: a heating plate for heating a semiconductor wafer to a predetermined temperature; a temperature measuring unit for measuring temperatures when heating the semiconductor wafer or a semiconductor wafer equivalent placed on the heating plate, at portions divided into a plurality of regions; and a controller for controlling the temperatures of the semiconductor wafer, and based on the temperature measurement result of the temperature measuring unit, the controller controls the temperature in heating the semiconductor wafer, for each of the plurality of regions. In cooling after the heating process, based on the temperature measurement result, the controller controls the temperature in cooling the semiconductor wafer, for each of the plurality of regions.
摘要翻译： 可以进行热处理以抑制半导体晶片等的表面内的线宽的变化的半导体晶片热处理装置和方法包括：将半导体晶片加热到预定温度的加热板; 温度测量单元，用于在分成多个区域的部分测量加热半导体晶片或放置在加热板上的半导体晶片等效物时的温度; 以及用于控制半导体晶片的温度的控制器，并且基于温度测量单元的温度测量结果，控制器控制对于多个区域中的每个区域加热半导体晶片的温度。 在加热处理后的冷却中，基于温度测量结果，控制器控制对于多个区域中的每个区域来冷却半导体晶片的温度。
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公开(公告)号：US06686121B2
公开(公告)日：2004-02-03
申请号：US09824198
申请日：2001-04-02
IPC分类号： G03C173
CPC分类号： G03F7/039 , C08F8/00 , C08F8/14 , C08F8/18 , C08F212/14 , C08F257/02 , C08F2800/20 , C08F2810/30 , C08L25/18 , C09D125/18 , G03F7/0045 , Y10S430/119 , C08F12/14 , C08F216/125 , C08F220/14 , C08F220/06 , C08F112/14
摘要： A resist composition is prepared by reacting an alkali-soluble polymer having a phenolic hydroxyl or carboxyl groups with a vinyl ether compound in an aprotic solvent, such as propylene glycol monomethyl ether acetate, in the presence of an acid catalyst, suspending the reaction by the addition of a base, and directly adding a photoacid generator to the reaction solution. When a dialkyl dicarbonate is used in stead of the vinyl ether compound, a resist composition is prepared by carrying out the reaction in the presence of a basic catalyst and adding a photoacid generator directly to the reaction. Thus resist compositions can be prepared without isolating or purifying an alkali-soluble polymer which has been substituted by a catalytic reaction.
摘要翻译： 抗蚀剂组合物通过使酸性催化剂存在下使非酚质子溶剂如丙二醇单甲醚乙酸酯中的具有酚羟基或羧基的碱溶性聚合物与乙烯基醚化合物反应来制备， 加入碱，并将光致酸产生剂直接加入到反应溶液中。 当使用二碳酸二烷基酯代替乙烯基醚化合物时，通过在碱性催化剂的存在下进行反应并直接向反应中加入光致酸产生剂制备抗蚀剂组合物。 因此，可以在不分离或纯化已经被催化反应取代的碱溶性聚合物的情况下制备抗蚀剂组合物。
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公开(公告)号：US06479210B2
公开(公告)日：2002-11-12
申请号：US09445345
申请日：2000-04-03
IPC分类号： G03F7004
CPC分类号： G03F7/0045 , G03F7/039 , Y10S430/115 , Y10S430/12 , Y10S430/122
摘要： A chemically amplified resist composition is disclosed which shows a high sensitivity, high resolution, excellent processing adaptability and excellent processing stability, which can form good pattern profile and which is suited as a finely processable material for use in manufacturing integrated circuit elements or the like. The chemically amplified resist composition comprises at least (a) an organic material containing a substituent or substituents capable of being released in the presence of an acid and (b) compounds capable of generating an acid upon exposure to radiation (acid-generators), composed of at least one onium salt and at least one of sulfone compounds and sulfonate compounds. This chemically amplified resist composition preferably further contains a basic compound.
摘要翻译： 公开了一种化学放大抗蚀剂组合物，其显示出高灵敏度，高分辨率，优异的加工适应性和优异的加工稳定性，其可以形成良好的图案轮廓，并且适合作为用于制造集成电路元件等的精细加工材料。 化学放大抗蚀剂组合物至少包含（a）含有取代基的有机材料或能够在酸存在下释放的取代基和（b）在暴露于辐射（酸 - 发生剂）时能够产生酸的化合物， 的至少一种鎓盐和至少一种砜化合物和磺酸盐化合物。 该化学放大抗蚀剂组合物优选还含有碱性化合物。
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