公开(公告)号：US11705370B2

公开(公告)日：2023-07-18

申请号：US17255435

申请日：2019-06-27

Applicant: OSRAM OLED GmbH

Inventor： Benjamin Michaelis ,  Markus Broell ,  Robert Walter ,  Franz Eberhard ,  Michael Huber ,  Wolfgang Schmid

IPC: H01L21/78 ,  H01L33/00 ,  H01L23/50 ,  H01L23/00 ,  H01L31/02 ,  H01L31/0216 ,  H01L31/18 ,  H01L33/44 ,  H01L33/62

CPC classification number: H01L21/78 ,  H01L23/50 ,  H01L24/94 ,  H01L31/02002 ,  H01L31/0216 ,  H01L31/186 ,  H01L33/0093 ,  H01L33/0095 ,  H01L33/44 ,  H01L33/62 ,  H01L24/32 ,  H01L24/83 ,  H01L2224/32225 ,  H01L2224/83192 ,  H01L2224/83801

Abstract: A semiconductor component may include a first compressive strain layer on top of a semiconductor body. A material for the first compressive strain layer may include Ta, Mo, Nb, compounds thereof, and combinations thereof.

公开(公告)号：US20210265213A1

公开(公告)日：2021-08-26

申请号：US17255435

申请日：2019-06-27

Applicant: OSRAM OLED GmbH

Inventor： Benjamin Michaelis ,  Markus Broell ,  Robert Walter ,  Franz Eberhard ,  Michael Huber ,  Wolfgang Schmid

IPC: H01L21/78 ,  H01L33/44 ,  H01L31/0216 ,  H01L23/50 ,  H01L33/62 ,  H01L31/02 ,  H01L23/00 ,  H01L33/00 ,  H01L31/18

Abstract: A semiconductor component may include a first compressive strain layer on top of a semiconductor body. A material for the first compressive strain layer may include Ta, Mo, Nb, compounds thereof, and combinations thereof.

公开(公告)号：US12176464B2

公开(公告)日：2024-12-24

申请号：US16753366

申请日：2018-09-26

Applicant: Osram OLED GmbH

Inventor： Christoph Schwarzmaier ,  Martin Mandl ,  Robert Walter ,  Roland Stieglmeier ,  Michael Schmal

IPC: H01L33/00 ,  H01L33/40 ,  H01L33/46

Abstract: A method for producing an optoelectronic component by providing a semiconductor layer sequence on a substrate where the semiconductor layer sequence is configured to emit radiation. The method may further include applying a contact layer to the semiconductor layer sequence where the contact layer has a layer thickness of at most 10 nm. The method may further include applying a reflective layer to the contact layer and applying a barrier layer directly to the reflective layer.

公开(公告)号：US20200274031A1

公开(公告)日：2020-08-27

申请号：US16753366

申请日：2018-09-26

Applicant: Osram OLED GmbH

Inventor： Christoph Schwarzmaier ,  Martin Mandl ,  Robert Walter ,  Roland Stieglmeier ,  Michael Schmal

IPC: H01L33/40 ,  H01L33/00 ,  H01L33/46

Abstract: A method for producing an optoelectronic component by providing a semiconductor layer sequence on a substrate where the semiconductor layer sequence is configured to emit radiation. The method may further include applying a contact layer to the semiconductor layer sequence where the contact layer has a layer thickness of at most 10 nm. The method may further include applying a reflective layer to the contact layer and applying a barrier layer directly to the reflective layer.