公开(公告)号：US20200220325A1

公开(公告)日：2020-07-09

申请号：US16641851

申请日：2018-08-10

Applicant: OSRAM OLED GmbH

Inventor： Matthias Peter ,  Teresa Wurm ,  Christoph Eichler

IPC: H01S5/042 ,  H01L33/14 ,  H01L31/0304 ,  H01L31/0232 ,  H01S5/30 ,  H01S5/026 ,  H01S5/343

Abstract: An optoelectronic semiconductor device includes a semiconductor body in which an active layer configured to generate or detect electromagnetic radiation, a first interlayer and a p-conducting contact layer are formed, and a connection layer applied to the semiconductor body, wherein the contact layer is disposed between the first interlayer and the connection layer and adjoins the connection layer, the active layer is arranged on a side of the first interlayer remote from the contact layer, the first interlayer and the contact layer are based on a nitride compound semiconductor, the contact layer is doped with a p-dopant, the contact layer has a thickness of at most 50 nm, and the contact layer includes a lower aluminum content than the first interlayer.

公开(公告)号：US11527865B2

公开(公告)日：2022-12-13

申请号：US16641851

申请日：2018-08-10

Applicant: OSRAM OLED GmbH

Inventor： Matthias Peter ,  Teresa Wurm ,  Christoph Eichler

IPC: H01S5/042 ,  H01L31/0304 ,  H01S5/30 ,  H01S5/343 ,  H01L33/32

Abstract: An optoelectronic semiconductor device includes a semiconductor body in which an active layer configured to generate or detect electromagnetic radiation, a first interlayer and a p-conducting contact layer are formed, and a connection layer applied to the semiconductor body, wherein the contact layer is disposed between the first interlayer and the connection layer and adjoins the connection layer, the active layer is arranged on a side of the first interlayer remote from the contact layer, the first interlayer and the contact layer are based on a nitride compound semiconductor, the contact layer is doped with a p-dopant, the contact layer has a thickness of at most 50 nm, and the contact layer includes a lower aluminum content than the first interlayer.