公开(公告)号：US20070013014A1

公开(公告)日：2007-01-18

申请号：US11523244

申请日：2006-09-19

Applicant: Shuwen Guo ,  Odd Eriksen ,  David Potasek

Inventor： Shuwen Guo ,  Odd Eriksen ,  David Potasek

IPC: H01L29/84 ,  H01L21/00

CPC classification number: C23C14/021 ,  C23C14/022 ,  C23C14/025 ,  C23C14/0682 ,  C23C14/5806 ,  C23C14/5846 ,  C23C14/5873 ,  G01L9/0042 ,  G01L19/0061 ,  G01L19/0609 ,  G01L19/147 ,  H01L2224/48472

Abstract: A harsh environment transducer including a substrate having a first surface and a second surface, wherein the second surface is in communication with the environment. The transducer includes a device layer sensor means located on the substrate for measuring a parameter associated with the environment. The sensor means including a single crystal semiconductor material having a thickness of less than about 0.5 microns. The transducer further includes an output contact located on the substrate and in electrical communication with the sensor means. The transducer includes a package having an internal package space and a port for communication with the environment. The package receives the substrate in the internal package space such that the first surface of the substrate is substantially isolated from the environment and the second surface of the substrate is substantially exposed to the environment through the port. The transducer further includes a connecting component coupled to the package and a wire electrically connecting the connecting component and the output contact such that an output of the sensor means can be communicated. An external surface of the wire is substantially platinum, and an external surface of at least one of the output contact and the connecting component is substantially platinum.

Abstract translation: 一种恶劣环境换能器，包括具有第一表面和第二表面的基底，其中第二表面与环境连通。 换能器包括位于基板上的用于测量与环境有关的参数的装置层传感器装置。 传感器装置包括厚度小于约0.5微米的单晶半导体材料。 换能器还包括位于基板上并与传感器装置电连通的输出触点。 换能器包括具有内部封装空间和用于与环境通信的端口的封装。 该封装在内部封装空间中接收衬底，使得衬底的第一表面基本上与环境隔离，并且衬底的第二表面基本上通过端口暴露于环境。 传感器还包括耦合到封装件的连接部件和将连接部件和输出触头电连接的导线，使得传感器装置的输出可以被传送。 导线的外表面基本上是铂，并且输出触点和连接部件中的至少一个的外表面基本上是铂。

公开(公告)号：US20060076855A1

公开(公告)日：2006-04-13

申请号：US11139207

申请日：2005-05-27

Applicant: Odd Eriksen ,  Shuwen Guo

Inventor： Odd Eriksen ,  Shuwen Guo

IPC: H01L41/04

CPC classification number: G01L9/008 ,  G01L9/0042 ,  G01L9/0055 ,  H01L41/1132 ,  Y10S439/936 ,  Y10T29/42 ,  Y10T29/49 ,  Y10T29/49005 ,  Y10T29/49007 ,  Y10T29/4908

Abstract: A pressure sensor including a movable component that is configured to move when the pressure sensor is exposed to differential pressure thereacross, and a pressure sensing component located on the movable component. The pressure sensing component includes an electrically conductive electron gas which changes its electrical resistance thereacross upon movement of the movable component. The pressure sensor is configured such that leads can be coupled to the pressure sensing component and the pressure sensing component can output a signal via the leads, the signal being related to a pressure to which the pressure sensor is exposed.

Abstract translation: 一种压力传感器，包括被构造成当压力传感器暴露于其间的差压时移动的可移动部件以及位于可移动部件上的压力感测部件。 压力感测部件包括导电电子气体，其在可移动部件移动时改变其电阻。 压力传感器被配置为使得引线可以耦合到压力感测部件，并且压力感测部件可以经由引线输出信号，该信号与压力传感器暴露于的压力相关。

公开(公告)号：US20060249847A1

公开(公告)日：2006-11-09

申请号：US11120885

申请日：2005-05-03

Applicant: Odd Eriksen ,  Kimiko Childress

Inventor： Odd Eriksen ,  Kimiko Childress

IPC: H01L29/40 ,  H01L21/44

CPC classification number: C23C14/022 ,  C23C14/021 ,  C23C14/025 ,  C23C14/0682 ,  C23C14/5806 ,  C23C14/5846 ,  C23C14/5873 ,  H01L24/13 ,  H01L2224/05171 ,  H01L2224/05181 ,  H01L2224/05186 ,  H01L2224/05644 ,  H01L2924/00014 ,  H01L2924/0496 ,  H01L2924/01032

Abstract: A metallization layer that includes a tantalum layer located on the component, a tantalum silicide layer located on the tantalum layer, and a platinum silicide layer located on the tantalum silicide layer. In another embodiment the invention is a component having a metallization layer on the component. In another embodiment, the metallization layer has a post-annealing adhesive strength to silicon of at least about 100 MPa as measured by a mechanical shear test after exposure to a temperature of about 600° C. for about 30 minutes, and the metallization layer remains structurally intact after exposure to a temperature of about 600° C. for about 1000 hours. The metallization is useful for bonding with brazing alloys.

Abstract translation: 包括位于组件上的钽层，位于钽层上的硅化钽层和位于硅化硅层上的铂硅化物层的金属化层。 在另一个实施方案中，本发明是在组分上具有金属化层的组分。 在另一个实施方案中，金属化层在暴露于约600℃的温度约30分钟后通过机械剪切试验测量的具有至少约100MPa的硅的后退火粘合强度，并且金属化层保留 在约600℃的温度下暴露约1000小时后，其结构完整。 金属化可用于与钎焊合金接合。