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    DISTORTION ESTIMATION AND CANCELLATION IN MEMORY DEVICES
    2.
    发明申请
    DISTORTION ESTIMATION AND CANCELLATION IN MEMORY DEVICES 有权
    存储器件中的失真估计和消除

    公开(公告)号：US20120026789A1

    公开(公告)日：2012-02-02

    申请号：US13239411

    申请日：2011-09-22

    申请人： Ofir Shalvi ,  Naftali Sommer ,  Eyal Gurgi ,  Ariel Maislos

    发明人： Ofir Shalvi ,  Naftali Sommer ,  Eyal Gurgi ,  Ariel Maislos

    IPC分类号： G11C16/06

    CPC分类号： G06F11/1068 ,  G06F11/1016 ,  G11C16/26

    摘要： A method for operating a memory (28) includes storing data in a group of analog memory cells (32) of the memory as respective first voltage levels. After storing the data, second voltage levels are read from the respective analog memory cells. The second voltage levels are affected by cross-coupling interference causing the second voltage levels to differ from the respective first voltage levels. Cross-coupling coefficients, which quantify the cross-coupling interference among the analog memory cells, are estimated by processing the second voltage levels. The data stored in the group of analog memory cells is reconstructed from the read second voltage levels using the estimated cross-coupling coefficients.

    摘要翻译： 用于操作存储器（28）的方法包括将存储器的一组模拟存储器单元（32）中的数据存储为相应的第一电压电平。 在存储数据之后，从相应的模拟存储器单元读取第二电压电平。 第二电压电平受到交叉耦合干扰的影响，导致第二电压电平与相应的第一电压电平不同。 通过处理第二电压电平来估计量化模拟存储器单元之间的交叉耦合干扰的交叉耦合系数。 使用估计的交叉耦合系数，从读取的第二电压电平重建存储在模拟存储器单元组中的数据。

    Distortion estimation and cancellation in memory devices
    3.
    发明授权
    Distortion estimation and cancellation in memory devices 有权
    内存设备中的失真估计和取消

    公开(公告)号：US08599611B2

    公开(公告)日：2013-12-03

    申请号：US13239408

    申请日：2011-09-22

    申请人： Ofir Shalvi ,  Naftali Sommer ,  Eyal Gurgi ,  Ariel Maislos

    发明人： Ofir Shalvi ,  Naftali Sommer ,  Eyal Gurgi ,  Ariel Maislos

    IPC分类号： G11C11/34 ,  G11C16/04 ,  G11C16/06

    CPC分类号： G06F11/1068 ,  G06F11/1016 ,  G11C16/26

    摘要： A method for operating a memory (28) includes storing data in a group of analog memory cells (32) of the memory as respective first voltage levels. After storing the data, second voltage levels are read from the respective analog memory cells. The second voltage levels are affected by cross-coupling interference causing the second voltage levels to differ from the respective first voltage levels. Cross-coupling coefficients, which quantify the cross-coupling interference among the analog memory cells, are estimated by processing the second voltage levels. The data stored in the group of analog memory cells is reconstructed from the read second voltage levels using the estimated cross-coupling coefficients.

    摘要翻译： 用于操作存储器（28）的方法包括将存储器的一组模拟存储器单元（32）中的数据存储为相应的第一电压电平。 在存储数据之后，从相应的模拟存储器单元读取第二电压电平。 第二电压电平受到交叉耦合干扰的影响，导致第二电压电平与相应的第一电压电平不同。 通过处理第二电压电平来估计量化模拟存储器单元之间的交叉耦合干扰的交叉耦合系数。 使用估计的交叉耦合系数，从读取的第二电压电平重建存储在模拟存储器单元组中的数据。

    Distortion estimation and cancellation in memory devices
    4.
    发明授权
    Distortion estimation and cancellation in memory devices 有权
    内存设备中的失真估计和取消

    公开(公告)号：US08050086B2

    公开(公告)日：2011-11-01

    申请号：US11995801

    申请日：2007-05-10

    申请人： Ofir Shalvi ,  Naftali Sommer ,  Eyal Gurgi ,  Ariel Maislos

    发明人： Ofir Shalvi ,  Naftali Sommer ,  Eyal Gurgi ,  Ariel Maislos

    IPC分类号： G11C11/34 ,  G11C16/04 ,  G11C16/06

    CPC分类号： G06F11/1068 ,  G06F11/1016 ,  G11C16/26

    摘要： A method for operating a memory (28) includes storing data in a group of analog memory cells (32) of the memory as respective first voltage levels. After storing the data, second voltage levels are read from the respective analog memory cells. The second voltage levels are affected by cross-coupling interference causing the second voltage levels to differ from the respective first voltage levels. Cross-coupling coefficients, which quantify the cross-coupling interference among the analog memory cells, are estimated by processing the second voltage levels. The data stored in the group of analog memory cells is reconstructed from the read second voltage levels using the estimated cross-coupling coefficients.

    摘要翻译： 用于操作存储器（28）的方法包括将存储器的一组模拟存储器单元（32）中的数据存储为相应的第一电压电平。 在存储数据之后，从相应的模拟存储器单元读取第二电压电平。 第二电压电平受到交叉耦合干扰的影响，导致第二电压电平与相应的第一电压电平不同。 通过处理第二电压电平来估计量化模拟存储器单元之间的交叉耦合干扰的交叉耦合系数。 使用估计的交叉耦合系数，从读取的第二电压电平重建存储在模拟存储器单元组中的数据。

    Distortion Estimation And Cancellation In Memory Devices
    5.
    发明申请
    Distortion Estimation And Cancellation In Memory Devices 有权
    内存设备中的失真估计和取消

    公开(公告)号：US20080198650A1

    公开(公告)日：2008-08-21

    申请号：US11995801

    申请日：2007-05-10

    申请人： Ofir Shalvi ,  Naftali Sommer ,  Eyal Gurgi ,  Ariel Maislos

    发明人： Ofir Shalvi ,  Naftali Sommer ,  Eyal Gurgi ,  Ariel Maislos

    IPC分类号： G11C16/06 ,  G11C7/00 ,  G11C27/00

    CPC分类号： G06F11/1068 ,  G06F11/1016 ,  G11C16/26

    摘要： A method for operating a memory (28) includes storing data in a group of analog memory cells (32) of the memory as respective first voltage levels. After storing the data, second voltage levels are read from the respective analog memory cells. The second voltage levels are affected by cross-coupling interference causing the second voltage levels to differ from the respective first voltage levels. Cross-coupling coefficients, which quantify the cross-coupling interference among the analog memory cells, are estimated by processing the second voltage levels. The data stored in the group of analog memory cells is reconstructed from the read second voltage levels using the estimated cross-coupling coefficients.

    摘要翻译： 用于操作存储器（28）的方法包括将存储器的一组模拟存储器单元（32）中的数据存储为相应的第一电压电平。 在存储数据之后，从相应的模拟存储器单元读取第二电压电平。 第二电压电平受到交叉耦合干扰的影响，导致第二电压电平与相应的第一电压电平不同。 通过处理第二电压电平来估计量化模拟存储器单元之间的交叉耦合干扰的交叉耦合系数。 使用估计的交叉耦合系数，从读取的第二电压电平重建存储在模拟存储器单元组中的数据。

    DISTORTION ESTIMATION AND CANCELLATION IN MEMORY DEVICES
    6.
    发明申请
    DISTORTION ESTIMATION AND CANCELLATION IN MEMORY DEVICES 有权

    公开(公告)号：US20120026788A1

    公开(公告)日：2012-02-02

    申请号：US13239408

    申请日：2011-09-22

    申请人： Ofir Shalvi ,  Naftali Sommer ,  Eyal Gurgi ,  Ariel Maislos

    发明人： Ofir Shalvi ,  Naftali Sommer ,  Eyal Gurgi ,  Ariel Maislos

    IPC分类号： G11C16/06

    CPC分类号： G06F11/1068 ,  G06F11/1016 ,  G11C16/26

    摘要： A method for operating a memory (28) includes storing data in a group of analog memory cells (32) of the memory as respective first voltage levels. After storing the data, second voltage levels are read from the respective analog memory cells. The second voltage levels are affected by cross-coupling interference causing the second voltage levels to differ from the respective first voltage levels. Cross-coupling coefficients, which quantify the cross-coupling interference among the analog memory cells, are estimated by processing the second voltage levels. The data stored in the group of analog memory cells is reconstructed from the read second voltage levels using the estimated cross-coupling coefficients.

    DATA STORAGE WITH INCREMENTAL REDUNDANCY
    8.
    发明申请
    DATA STORAGE WITH INCREMENTAL REDUNDANCY 有权
    数据存储与增量冗余

    公开(公告)号：US20080282106A1

    公开(公告)日：2008-11-13

    申请号：US12119069

    申请日：2008-05-12

    申请人： Ofir Shalvi ,  Dotan Sokolov ,  Eyal Gurgi ,  Oren Golov ,  Naftali Sommer

    发明人： Ofir Shalvi ,  Dotan Sokolov ,  Eyal Gurgi ,  Oren Golov ,  Naftali Sommer

    IPC分类号： G06F11/16

    CPC分类号： G06F11/1068 ,  G11C2029/0411

    摘要： A method for operating a memory includes encoding input data with an Error Correction Code (ECC) to produce input encoded data including first and second sections, such that the ECC is decodable based on the first section at a first redundancy, and based on both the first and the second sections at a second redundancy that is higher than the first redundancy.Output encoded data is read and a condition is evaluated. The input data is reconstructed using a decoding level selected, responsively to the condition, from a first level, at which a first part of the output encoded data corresponding to the first section is processed to decode the ECC at the first redundancy, and a second level, at which the first part and a second part of the output encoded data corresponding to the second section are processed jointly to decode the ECC at the second redundancy.

    摘要翻译： 一种用于操作存储器的方法包括用错误校正码（ECC）编码输入数据以产生包括第一和第二部分的输入编码数据，使得基于第一冗余部分的第一部分可以解码ECC，并且基于两者 第一和第二部分具有高于第一冗余的第二冗余。 读取输出编码数据并评估条件。 输入数据使用从第一级别选择的解码级别来重构，在第一级别处理对应于第一部分的输出编码数据的第一部分被处理以在第一冗余处解码ECC，以及第二级 级别，其中对应于第二部分的输出编码数据的第一部分和第二部分共同处理，以在第二冗余处对ECC进行解码。

    Data storage with incremental redundancy
    9.
    发明授权
    Data storage with incremental redundancy 有权
    具有增量冗余的数据存储

    公开(公告)号：US08234545B2

    公开(公告)日：2012-07-31

    申请号：US12119069

    申请日：2008-05-12

    申请人： Ofir Shalvi ,  Dotan Sokolov ,  Eyal Gurgi ,  Oren Golov ,  Naftali Sommer

    发明人： Ofir Shalvi ,  Dotan Sokolov ,  Eyal Gurgi ,  Oren Golov ,  Naftali Sommer

    IPC分类号： G06F11/00

    CPC分类号： G06F11/1068 ,  G11C2029/0411

    摘要： A method for operating a memory includes encoding input data with an Error Correction Code (ECC) to produce input encoded data including first and second sections, such that the ECC is decodable based on the first section at a first redundancy, and based on both the first and the second sections at a second redundancy that is higher than the first redundancy.Output encoded data is read and a condition is evaluated. The input data is reconstructed using a decoding level selected, responsively to the condition, from a first level, at which a first part of the output encoded data corresponding to the first section is processed to decode the ECC at the first redundancy, and a second level, at which the first part and a second part of the output encoded data corresponding to the second section are processed jointly to decode the ECC at the second redundancy.

    摘要翻译： 一种用于操作存储器的方法包括用错误校正码（ECC）对输入数据进行编码以产生包括第一和第二部分的输入编码数据，使得基于第一冗余部分的第一部分可以解码ECC，并且基于两者 第一和第二部分具有高于第一冗余的第二冗余。 读取输出编码数据并评估条件。 输入数据使用从第一级别选择的解码级别来重构，在第一级别处理对应于第一部分的输出编码数据的第一部分被处理以在第一冗余处解码ECC，以及第二级 级别，其中对应于第二部分的输出编码数据的第一部分和第二部分共同处理，以在第二冗余处对ECC进行解码。

    Estimation of non-linear distortion in memory devices
    10.
    发明授权
    Estimation of non-linear distortion in memory devices 有权
    存储器件非线性失真的估计

    公开(公告)号：US08060806B2

    公开(公告)日：2011-11-15

    申请号：US11995813

    申请日：2007-08-27

    申请人： Ofir Shalvi ,  Naftali Sommer ,  Eyal Gurgi ,  Oren Golov ,  Dotan Sokolov

    发明人： Ofir Shalvi ,  Naftali Sommer ,  Eyal Gurgi ,  Oren Golov ,  Dotan Sokolov

    IPC分类号： G11C29/00

    CPC分类号： G11C11/5621 ,  G11C16/3418 ,  G11C27/005

    摘要： A method for operating a memory (24) includes storing data in analog memory cells (32) of the memory by writing respective analog values to the analog memory cells. A set of the analog memory cells is identified, including an interfered cell having a distortion that is statistically correlated with the respective analog values of the analog memory cells in the set. A mapping is determined between combinations of possible analog values of the analog memory cells in the set and statistical characteristics of composite distortion levels present in the interfered memory cell. The mapping is applied so as to compensate for the distortion in the interfered memory cell.

    摘要翻译： 一种用于操作存储器（24）的方法包括通过将相应的模拟值写入模拟存储器单元来将数据存储在存储器的模拟存储器单元（32）中。 识别一组模拟存储器单元，包括具有与组中的模拟存储器单元的相应模拟值统计相关的失真的干扰单元。 在存在于受干扰存储器单元中的复合失真级的集合和统计特性中的模拟存储器单元的可能模拟值的组合之间确定映射。 应用映射以补偿受干扰的存储单元中的失真。